Literature DB >> 9948405

Band lineups and deformation potentials in the model-solid theory.

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Abstract

Year:  1989        PMID： 9948405     DOI： 10.1103/physrevb.39.1871

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  23 in total

1.  Direct-bandgap light-emitting germanium in tensilely strained nanomembranes.

Authors:  Jose R Sánchez-Pérez; Cicek Boztug; Feng Chen; Faisal F Sudradjat; Deborah M Paskiewicz; R B Jacobson; Max G Lagally; Roberto Paiella
Journal:  Proc Natl Acad Sci U S A       Date:  2011-11-14       Impact factor: 11.205

2.  Tuning the optical and electronic properties of colloidal nanocrystals by lattice strain.

Authors:  Andrew M Smith; Aaron M Mohs; Shuming Nie
Journal:  Nat Nanotechnol       Date:  2008-12-07       Impact factor: 39.213

3.  Photoconductivity and photoluminescence under bias in GaInNAs/GaAs MQW p-i-n structures.

Authors:  Hagir M Khalil; Ben Royall; Simone Mazzucato; Naci Balkan
Journal:  Nanoscale Res Lett       Date:  2012-09-28       Impact factor: 4.703

4.  Tuning the electro-optical properties of germanium nanowires by tensile strain.

Authors:  J Greil; A Lugstein; C Zeiner; G Strasser; E Bertagnolli
Journal:  Nano Lett       Date:  2012-11-12       Impact factor: 11.189

5.  Carrier trapping and escape times in p-i-n GaInNAs MQW structures.

Authors:  Hagir M Khalil; Naci Balkan
Journal:  Nanoscale Res Lett       Date:  2014-01-13       Impact factor: 4.703

6.  Electronic structure modulation of metal-organic frameworks for hybrid devices.

Authors:  Keith T Butler; Christopher H Hendon; Aron Walsh
Journal:  ACS Appl Mater Interfaces       Date:  2014-12-12       Impact factor: 9.229

7.  Establishing the limits of efficiency of perovskite solar cells from first principles modeling.

Authors:  Oscar Grånäs; Dmitry Vinichenko; Efthimios Kaxiras
Journal:  Sci Rep       Date:  2016-11-08       Impact factor: 4.379

8.  Quantum strain sensor with a topological insulator HgTe quantum dot.

Authors:  Marek Korkusinski; Pawel Hawrylak
Journal:  Sci Rep       Date:  2014-05-09       Impact factor: 4.379

9.  Material gain engineering in GeSn/Ge quantum wells integrated with an Si platform.

Authors:  H S Mączko; R Kudrawiec; M Gladysiewicz
Journal:  Sci Rep       Date:  2016-09-30       Impact factor: 4.379

10.  Defect-free high Sn-content GeSn on insulator grown by rapid melting growth.

Authors:  Zhi Liu; Hui Cong; Fan Yang; Chuanbo Li; Jun Zheng; Chunlai Xue; Yuhua Zuo; Buwen Cheng; Qiming Wang
Journal:  Sci Rep       Date:  2016-12-12       Impact factor: 4.379
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