Literature DB >> 9947690

Quantum correction to the equation of state of an electron gas in a semiconductor.

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Abstract

Year:  1989        PMID： 9947690     DOI： 10.1103/physrevb.39.9536

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  8 in total

1.  Numerical solutions of ideal quantum gas dynamical flows governed by semiclassical ellipsoidal-statistical distribution.

Authors:  Jaw-Yen Yang; Chih-Yuan Yan; Manuel Diaz; Juan-Chen Huang; Zhihui Li; Hanxin Zhang
Journal:  Proc Math Phys Eng Sci       Date:  2014-01-08       Impact factor: 2.704

2.  Numerical solutions of the semiclassical Boltzmann ellipsoidal-statistical kinetic model equation.

Authors:  Jaw-Yen Yang; Chin-Yuan Yan; Juan-Chen Huang; Zhihui Li
Journal:  Proc Math Phys Eng Sci       Date:  2014-08-08       Impact factor: 2.704

3.  Modeling and simulation of electronic structure, material interface and random doping in nano electronic devices.

Authors:  Duan Chen; Guo-Wei Wei
Journal:  J Comput Phys       Date:  2010-06-20       Impact factor: 3.553

4.  Characterizing the electrical properties of raised S/D junctionless thin-film transistors with a dual-gate structure.

Authors:  Ya-Chi Cheng; Hung-Bin Chen; Jun-Ji Su; Chi-Shen Shao; Cheng-Ping Wang; Chun-Yen Chang; Yung-Chun Wu
Journal:  Nanoscale Res Lett       Date:  2014-12-11       Impact factor: 4.703

5.  Temperature dependence of electronic behaviors in quantum dimension junctionless thin-film transistor.

Authors:  Ya-Chi Cheng; Hung-Bin Chen; Ming-Hung Han; Nan-Heng Lu; Jun-Ji Su; Chi-Shen Shao; Yung-Chun Wu
Journal:  Nanoscale Res Lett       Date:  2014-08-13       Impact factor: 4.703

6.  Sensitivity of Inner Spacer Thickness Variations for Sub-3-nm Node Silicon Nanosheet Field-Effect Transistors.

Authors:  Sanguk Lee; Jinsu Jeong; Jun-Sik Yoon; Seunghwan Lee; Junjong Lee; Jaewan Lim; Rock-Hyun Baek
Journal:  Nanomaterials (Basel)       Date:  2022-09-26       Impact factor: 5.719

Review 7.  A review of recent advances in the spherical harmonics expansion method for semiconductor device simulation.

Authors:  K Rupp; C Jungemann; S-M Hong; M Bina; T Grasser; A Jüngel
Journal:  J Comput Electron       Date:  2016-05-11       Impact factor: 1.807

8.  N-Type Nanosheet FETs without Ground Plane Region for Process Simplification.

Authors:  Khwang-Sun Lee; Jun-Young Park
Journal:  Micromachines (Basel)       Date:  2022-03-11       Impact factor: 2.891
  8 in total

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