Literature DB >> 9942598

Electronic properties of metastable GexSn

.   

Abstract

Year:  1987        PMID： 9942598     DOI： 10.1103/physrevb.36.7994

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


× No keyword cloud information.
  5 in total

1.  Stretching the Equilibrium Limit of Sn in Ge1-x Sn x Nanowires: Implications for Field Effect Transistors.

Authors:  Subhajit Biswas; Jessica Doherty; Emmanuele Galluccio; Hugh G Manning; Michele Conroy; Ray Duffy; Ursel Bangert; John J Boland; Justin D Holmes
Journal:  ACS Appl Nano Mater       Date:  2021-02-03

Review 2.  Growth and applications of GeSn-related group-IV semiconductor materials.

Authors:  Shigeaki Zaima; Osamu Nakatsuka; Noriyuki Taoka; Masashi Kurosawa; Wakana Takeuchi; Mitsuo Sakashita
Journal:  Sci Technol Adv Mater       Date:  2015-07-28       Impact factor: 8.090

3.  Free-running Sn precipitates: an efficient phase separation mechanism for metastable Ge1-xSnx epilayers.

Authors:  Heiko Groiss; Martin Glaser; Magdalena Schatzl; Moritz Brehm; Dagmar Gerthsen; Dietmar Roth; Peter Bauer; Friedrich Schäffler
Journal:  Sci Rep       Date:  2017-11-23       Impact factor: 4.379

4.  Ge1-xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration.

Authors:  Timothy D Eales; Igor P Marko; Stefan Schulz; Edmond O'Halloran; Seyed Ghetmiri; Wei Du; Yiyin Zhou; Shui-Qing Yu; Joe Margetis; John Tolle; Eoin P O'Reilly; Stephen J Sweeney
Journal:  Sci Rep       Date:  2019-10-01       Impact factor: 4.379

5.  Non-equilibrium induction of tin in germanium: towards direct bandgap Ge(1-x)Sn(x) nanowires.

Authors:  Subhajit Biswas; Jessica Doherty; Dzianis Saladukha; Quentin Ramasse; Dipanwita Majumdar; Moneesh Upmanyu; Achintya Singha; Tomasz Ochalski; Michael A Morris; Justin D Holmes
Journal:  Nat Commun       Date:  2016-04-20       Impact factor: 14.919
  5 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.