| Literature DB >> 9767668 |
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Abstract
: We discuss the application of ion microscopy and in situ electron microscopy to the study of electronic and optical materials and devices. We demonstrate how the combination of in situ transmission electron microscopy and focused ion beam microscopy provides new avenues for the study for such structures, enabling extension of these techniques to the study of dopant distributions, nanoscale stresses, three-dimensional structural and chemical reconstruction, and real-time evolution of defect microstructure. We also discuss in situ applications of thermal, mechanical, electrical, and optical stresses during transmission electron microscopy imaging.Entities:
Year: 1998 PMID: 9767668 DOI: 10.1017/s143192769898031x
Source DB: PubMed Journal: Microsc Microanal ISSN: 1431-9276 Impact factor: 4.127