Literature DB >> 36191213

ZnPSe3 as ultrabright indirect band-gap system with microsecond excitonic lifetimes.

M Grzeszczyk1,2, K S Novoselov1,2, M Koperski1,2.   

Abstract

ZnPSe3 was identified as a two-dimensional material wherein valley and spin can be optically controlled in technologically relevant timescales. We report an optical characterization of ZnPSe3 crystals that show indirect band-gap characteristics in combination with unusually strong photoluminescence. We found evidence of interband recombination from photoexcited electron-hole states with lifetimes in a microsecond timescale. Through a comparative analysis of photoluminescence and photoluminescence excitation spectra, we reconstructed the electronic band scheme relevant to fundamental processes of light absorption, carrier relaxation, and radiative recombination through interband pathways and annihilation of defect-bound excitons. The investigation of the radiative processes in the presence of a magnetic field revealed spin splitting of electronic states contributing to the ground excitonic states. Consequently, the magnetic field induces an imbalance in the number of excitons with the opposite angular momentum according to the thermal equilibrium as seen in the photoluminescence decay profiles resolved by circular polarization.

Entities:  

Keywords:  2D materials; ZnPSe3; photoluminescence

Mesh:

Year:  2022        PMID: 36191213      PMCID: PMC9565059          DOI: 10.1073/pnas.2207074119

Source DB:  PubMed          Journal:  Proc Natl Acad Sci U S A        ISSN: 0027-8424            Impact factor:   12.779


  13 in total

1.  Exciton band structure in layered MoSe2: from a monolayer to the bulk limit.

Authors:  Ashish Arora; Karol Nogajewski; Maciej Molas; Maciej Koperski; Marek Potemski
Journal:  Nanoscale       Date:  2015-11-25       Impact factor: 7.790

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Journal:  Nat Mater       Date:  2015-02-02       Impact factor: 43.841

4.  Temperature-dependent exciton linewidths in semiconductors.

Authors: 
Journal:  Phys Rev B Condens Matter       Date:  1990-12-15

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6.  Evolution of electronic structure in atomically thin sheets of WS2 and WSe2.

Authors:  Weijie Zhao; Zohreh Ghorannevis; Leiqiang Chu; Minglin Toh; Christian Kloc; Ping-Heng Tan; Goki Eda
Journal:  ACS Nano       Date:  2012-12-28       Impact factor: 15.881

7.  Atomically thin MoS₂: a new direct-gap semiconductor.

Authors:  Kin Fai Mak; Changgu Lee; James Hone; Jie Shan; Tony F Heinz
Journal:  Phys Rev Lett       Date:  2010-09-24       Impact factor: 9.161

8.  Control of Exciton Valley Coherence in Transition Metal Dichalcogenide Monolayers.

Authors:  G Wang; X Marie; B L Liu; T Amand; C Robert; F Cadiz; P Renucci; B Urbaszek
Journal:  Phys Rev Lett       Date:  2016-10-25       Impact factor: 9.161

Review 9.  Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

Authors:  Qing Hua Wang; Kourosh Kalantar-Zadeh; Andras Kis; Jonathan N Coleman; Michael S Strano
Journal:  Nat Nanotechnol       Date:  2012-11       Impact factor: 39.213

10.  Radiatively Limited Dephasing and Exciton Dynamics in MoSe2 Monolayers Revealed with Four-Wave Mixing Microscopy.

Authors:  Tomasz Jakubczyk; Valentin Delmonte; Maciej Koperski; Karol Nogajewski; Clément Faugeras; Wolfgang Langbein; Marek Potemski; Jacek Kasprzak
Journal:  Nano Lett       Date:  2016-08-22       Impact factor: 11.189

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