| Literature DB >> 35567356 |
Taewoo Kim1, Subhangi Subedi1,2, Bipeen Dahal1,3, Kisan Chhetri1, Tanka Mukhiya1,4, Alagan Muthurasu1, Jagadis Gautam5, Prakash Chandra Lohani1,6, Debendra Acharya1, Ishwor Pathak1,6, Su-Hyeong Chae1, Tae Hoon Ko1, Hak Yong Kim1,7.
Abstract
The hurdle of fabricating asymmetric supercapacitor (ASC) devices using a faradic cathode and a double layer anode is challenging due to the required large amount of active mass of anodic material compared to that of the cathodic material during mass balancing due to the large difference in capacitance values of the two electrodes. Here, the problem is addressed by engineering a negative electrode that furnishes an ultrahigh capacitance. An in situ developed metal-organic framework (MOF)-based thermal treatment is adopted to grow highly porous N-doped carbon nanotubes (CNTs) containing submerged Co nanoparticles over nano-fibrillated electrospun hollow carbon nanofibers (HCNFs). The optimized CNT@HCNF-1.5 furnishes an ultrahigh capacitance approaching 712 F g-1 with excellent rate capability. The capacitance reported from this work is the highest for any carbonaceous material reported to date. The CNT@HCNF-1.5 is further used to fabricate symmetric supercapacitors (SSCs), as well as ASC devices. Remarkably, both the SSC and ASC devices furnish incredible performances in all aspects of SCs, such as a high energy density, long cycle life, and high rate capability, displaying decent practical applicability. The energy density of the SSC device reaches as high as 20.13 W h kg-1 , whereas that of ASC approaches 87.5 W h kg-1 .Entities:
Keywords: N-doped carbon nanotubes (CNTs); double layer anodes; electrospinning; mass balancing; metal-organic frameworks; nano-fibrillated hollow carbon nanofibers (CNFs); supercapacitors
Year: 2022 PMID: 35567356 PMCID: PMC9284134 DOI: 10.1002/advs.202200650
Source DB: PubMed Journal: Adv Sci (Weinh) ISSN: 2198-3844 Impact factor: 17.521
Figure 1Schematic illustration of the fabrication technique of the CNT@HCNF‐x electrode.
Figure 2a–c) FE‐SEM images of CNT@HCNF‐1.5 at different magnifications, d) cross‐section showing hollow fibers and nanofibrils, e,f) TEM images, g,h) HR‐TEM showing lattice fringes and connections between CNFs and CNTs (i).
Figure 3a) XRD patterns of different samples. High‐resolution XPS spectrum of CNT@HCNF‐1.5 deconvoluted for b) N 1s, c) C 1s, d) O 1s, e) Co 2p, and f) BET adsorption–desorption isotherms for CNT@HCNF‐1.5 (inset: pore‐size distribution curve).
Figure 4Electrochemical characterizations of CNT@HCNF‐1.5. a) CV curves at different scan rates, b) GCD curves at different current densities, c) Nyquist impedance plots for different samples (inset: equivalent circuit diagram used to fit Nyquist plots using ZSimpWin software), d) specific capacitances with respect to current densities for different samples, e) plot showing the cyclic stability of different samples, f) comparison of Nyquist plots before and after stability test (inset: equivalent circuit diagram).
Figure 5Electrochemical characterizations of the CNT@HCNF‐1.5//CNT@HCNF‐1.5 SSC device. a) CV curves, b) GCD curves, c) plot showing variations in the specific capacitance with current densities, d) plot showing the cyclic stability of SSC device, e) comparison of Nyquist plots before and after the stability test (inset: equivalent circuit diagram).
Figure 6Ragone plots for the a) CNT@HCNF‐1.5//CNT@HCNF‐1.5 SSC device and b) Co3O4@NF//CNT@HCNF‐1.5 ASC device.
Figure 7Electrochemical performances of the Co3O4@NF//CNT@HCNF‐1.5 ASC device. a) CV curves at different working potentials at a scan rate of 20 mV s–1, b) CV curves at different scan rates, c) GCD curves at different current densities, d) plot showing the variation in the specific capacitances at different current densities, e) plot showing cyclic stability, f) Nyquist impedance plots before and after the stability test (inset: equivalent circuit diagram).