| Literature DB >> 35544572 |
Fei Xu1, Changzhen Qu1, Qiongqiong Lu2, Jiashen Meng3, Xiuhai Zhang1, Xiaosa Xu1, Yuqian Qiu1, Baichuan Ding1, Jiaying Yang1, Fengren Cao4, Penghui Yang1, Guangshen Jiang1, Stefan Kaskel5, Jingyuan Ma6, Liang Li4, Xingcai Zhang3,7, Hongqiang Wang1.
Abstract
Constructing robust nucleation sites with an ultrafine size in a confined environment is essential toward simultaneously achieving superior utilization, high capacity, and long-term durability in Na metal-based energy storage, yet remains largely unexplored. Here, we report a previously unexplored design of spatially confined atomic Sn in hollow carbon spheres for homogeneous nucleation and dendrite-free growth. The designed architecture maximizes Sn utilization, prevents agglomeration, mitigates volume variation, and allows complete alloying-dealloying with high-affinity Sn as persistent nucleation sites, contrary to conventional spatially exposed large-size ones without dealloying. Thus, conformal deposition is achieved, rendering an exceptional capacity of 16 mAh cm-2 in half-cells and long cycling over 7000 hours in symmetric cells. Moreover, the well-known paradox is surmounted, delivering record-high Na utilization (e.g., 85%) and large capacity (e.g., 8 mAh cm-2) while maintaining extraordinary durability over 5000 hours, representing an important breakthrough for stabilizing Na anode.Entities:
Year: 2022 PMID: 35544572 PMCID: PMC9094655 DOI: 10.1126/sciadv.abm7489
Source DB: PubMed Journal: Sci Adv ISSN: 2375-2548 Impact factor: 14.957
Fig. 1.Schematic diagram of the preparation and application of At-Sn@HCN in Na metal stabilization.
(A) Fabrication procedure of At-Sn@HCN. (B) At-Sn@HCN as nucleation interphase for homogeneous Na nucleation and reversible plating/stripping.
Fig. 2.Structural characterizations of At-Sn@HCN.
(A and B) TEM images and corresponding elemental mappings of At-Sn@HCN. (C) XRD patterns of At-Sn@HCN and Ex-Sn/HCN. (D and E) HAADF-STEM images of At-Sn@HCN. Sn K-edge (F) XANES spectra and (G) Fourier-transformed EXAFS spectra of At-Sn@HCN and Sn foil. (H) Optimized structures and charge density difference plots of Na atom adsorption on HCN (left) and At-Sn@HCN (right).
Fig. 3.Electrochemical and structural analysis in half-cells.
(A) Voltage profiles and (B) nucleation overpotentials of Na deposition on the At-Sn@HCN and HCN electrode. (C) Coulombic efficiencies of Na plating/stripping on At-Sn@HCN, HCN, and bare Cu at 2 mA cm−2 and 1 mAh cm−2. (D) Stepwise increasing the areal capacity of At-Sn@HCN from 2 to 16 mAh cm−2 and back to 2 mAh cm−2 at 1 mA cm−2. (E) Plating/stripping curves of At-Sn@HCN at 1 mA cm−2 and 16 mAh cm−2. (F) Discharging curve at the first cycle for At-Sn@HCN in half-cell at 1 mA cm−2. (G) Corresponding SEM images after discharging for a given time. The inset is a digital photo for plating of 60 min. (H) Element mappings of the At-Sn@HCN electrode at the nucleation point (12 min) in (F).
Fig. 4.Symmetric and full cell performances.
(A) Voltage-time profiles of At-Sn@HCN and HCN in symmetric cells at an areal capacity of 1 mAh cm−2 and a current density of 1 mA cm−2; insets show the enlarged curves around 1000 and 4000 hours. (B) The comparison of cycle stability, current density, and areal capacity with previous works. (C) Voltage-time profiles of At-Sn@HCN in symmetric cells with DODs of 80 and 85%. (D) The comparison of DOD, capacity, and cycle life with previous literatures. (E) The rate test from 0.1 to 5 C and back to 2 C for At-Sn@HCN/Na||NVP and Cu/Na||NVP full cells. (F) Long-term cycling of At-Sn@HCN/Na||NVP full cell at 2 C.
Fig. 5.Mechanism analysis of atomic Sn nucleation sites.
(A) The CV curve of the Sn microparticle electrode at 0.1 mV s−1. (B) Adsorption energy between different lattice planes of Sn and Na15Sn4 and (C) the corresponding optimized structures and charge density difference plots of Na atom adsorption. (D) Voltage capacity profiles of At-Sn@HCN and Sn microparticle electrode under different cutoff potentials of 1 and 0.1 V at 2 mA cm−2 and 1 mAh cm−2. (E) Schematic illustration of plating/stripping behaviors for At-Sn@HCN and a large-size Sn system.