| Literature DB >> 35416399 |
Maria Küllmer1, Felix Herrmann-Westendorf1,2, Patrick Endres3, Stefan Götz3, Hamid Reza Rasouli1, Emad Najafidehaghani1, Christof Neumann1, Rebecka Gläßner1, David Kaiser1, Thomas Weimann4, Andreas Winter3, Ulrich S Schubert3,5,6, Benjamin Dietzek-Ivanšić1,2,5,6, Andrey Turchanin1,5,6.
Abstract
Artificial photosynthesis for hydrogen production is an important element in the search for green energy sources. The incorporation of photoactive units into mechanically stable 2D materials paves the way toward the realization of ultrathin membranes as mimics for leaves. Here we present and compare two concepts to introduce a photoactive RuII polypyridine complex into ≈1 nm thick carbon nanomembranes (CNMs) generated by low-energy electron irradiation induced cross-linking of aromatic self-assembled monolayers. The photoactive units are either directly incorporated into the CNM scaffold or covalently grafted to its surface. We characterize RuII CNMs using X-ray photoelectron, surface-enhanced Raman, photothermal deflection spectroscopy, atomic force, scanning electron microscopy, and study their photoactivity in graphene field-effect devices. Therewith, we explore the applicability of low-energy electron irradiation of metal complexes for photosensitizer nanosheet formation.Entities:
Keywords: 2D Materials; Monolayers; Nanomembranes; Nanostructures; Ruthenium Sensitizers; Surface Chemistry
Year: 2022 PMID: 35416399 PMCID: PMC9401006 DOI: 10.1002/anie.202204953
Source DB: PubMed Journal: Angew Chem Int Ed Engl ISSN: 1433-7851 Impact factor: 16.823
Figure 1General preparation procedure of a photosensitizer nanosheet. Self‐assembly of compound 1 on gold generates RuII SAM 2 a. Irradiation with low‐energy electrons leads to cross‐linking and formation of RuII CNM 2 b. The nanosheet 2 b can be transferred to various solid or holey target substrates, e.g., SiO2/Si wafers or TEM grids.
Scheme 1Synthesis of different photosensitizer nanosheets. The layer thickness d on gold was obtained by X‐ray photoelectron spectroscopy. Experimental conditions: a) 1 (0.07 mM), Au/mica, DMF, 72 h, RT or 50 °C; b) electron beam irradiation (50 eV, 50 mC cm−2); c) Au/mica, 3 (0.22 mM), DMF d) electron beam irradiation (100 eV, 50 mC cm−2); e) NBPT SAM 4 a, 1 (0.37 mM), DMF, 45 °C, 28 h; f) NH2‐CNM 4 b, 1 (0.013 mmol), PyBOP (0.026 mmol), DIPEA (0.054 mmol), DMF (30 mL), 70 °C, 4 h 30 min.
Figure 2Atomic force microscopy images of RuII CNM 2 b a) on Au and b) after transfer to SiO2/Si wafers. In (b) the line profile of the nanosheets edge on SiO2 is shown in white. c) Optical micrograph of nanosheet 2 b on Si wafer. d)–f) Scanning electron micrographs of different RuII CNMs transferred to Quantifoil TEM grids. In (d) RuII CNM 2 b shows ruptures. Variation of self‐assembly conditions for e) CNM 5 b and f) CNM 6 b leads to large free‐standing areas.
Figure 3Changes in the molecular structure of the RuII polypyridine complex during cross‐linking. a) XP spectra of the RuII complex SAM 2 a and CNM 2 b on gold surface and CNM 2 b on SiO2/Si. In the bottom row, spectra of the transferred nanosheet show additional species assigned to protonated bipyridine (light blue) and SiO2 (orange). N 1s and O 1s spectra are magnified by the indicated factors for better visualization. b) Raman spectra of RuII CNM 2 b, the hierarchical nanosheet RuII‐NH2‐CNM 7 as well as RuII complex 1 in solution with Ag nanoparticles and as solid.
Figure 4Absorption spectra obtained by photothermal deflection spectroscopy of a) RuII CNM 2 b (orange) and b) RuII‐NH2‐CNM 7 (light blue) using as fluorinated solvent 3 M™ Fluorinert™ FC‐770. The difference spectra of RuII CNM 2 b (red) and RuII‐NH2‐CNM 7 (dark blue) with NH2‐CNM 4 b (black) resemble the characteristic features of the reference absorption spectra of complex 1 in CHCl3 solution (purple). The photo‐current response I ds of a RuII CNM/GFET device (blue‐colored) upon ON/OFF switching of a 520 nm laser (80 μW cm−2, V ds=0.1 V) is shown at c) V g=−50 V and d) V g=+50 V. The RuII CNM thickness is ≈3 nm. The current responses I ds of a bare GFET reference device under the same laser switching are displayed in red in the dual y‐axis graphs.