Literature DB >> 35333049

Bi2O2Se-Based True Random Number Generator for Security Applications.

Bo Liu1, Ying-Feng Chang2, Juzhe Li1, Xu Liu1, Le An Wang1, Dharmendra Verma3, Hanyuan Liang4, Hui Zhu1, Yudi Zhao5, Lain-Jong Li6, Tuo-Hung Hou7, Chao-Sung Lai2,3,8,9.   

Abstract

The fast development of the Internet of things (IoT) promises to deliver convenience to human life. However, a huge amount of the data is constantly generated, transmitted, processed, and stored, posing significant security challenges. The currently available security protocols and encryption techniques are mostly based on software algorithms and pseudorandom number generators that are vulnerable to attacks. A true random number generator (TRNG) based on devices using stochastically physical phenomena has been proposed for auditory data encryption and trusted communication. In the current study, a Bi2O2Se-based memristive TRNG is demonstrated for security applications. Compared with traditional metal-insulator-metal based memristors, or other two-dimensional material-based memristors, the Bi2O2Se layer as electrode with non-van der Waals interface, high carrier mobility, air stability, extreme low thermal conductivity, as well as vertical surface resistive switching shows intrinsic stochasticity and complexity in a memristive true analogue/digital random number generation. Moreover, those analogue/digital random number generation processes are proved to be resilient for machine learning prediction.

Entities:  

Keywords:  Bi2O2Se; Diffie−Hellman key exchange; Shapley value; long short-term memory; memristor; random telegraph noise; true random number generator

Year:  2022        PMID: 35333049      PMCID: PMC9048684          DOI: 10.1021/acsnano.2c01784

Source DB:  PubMed          Journal:  ACS Nano        ISSN: 1936-0851            Impact factor:   18.027


  20 in total

1.  Bi2O2Se-Based Memristor-Aided Logic.

Authors:  Bo Liu; Yudi Zhao; Dharmendra Verma; Le An Wang; Hanyuan Liang; Hui Zhu; Lain-Jong Li; Tuo-Hung Hou; Chao-Sung Lai
Journal:  ACS Appl Mater Interfaces       Date:  2021-03-16       Impact factor: 9.229

2.  High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se.

Authors:  Jinxiong Wu; Hongtao Yuan; Mengmeng Meng; Cheng Chen; Yan Sun; Zhuoyu Chen; Wenhui Dang; Congwei Tan; Yujing Liu; Jianbo Yin; Yubing Zhou; Shaoyun Huang; H Q Xu; Yi Cui; Harold Y Hwang; Zhongfan Liu; Yulin Chen; Binghai Yan; Hailin Peng
Journal:  Nat Nanotechnol       Date:  2017-04-03       Impact factor: 39.213

3.  Subfilamentary Networks Cause Cycle-to-Cycle Variability in Memristive Devices.

Authors:  Christoph Baeumer; Richard Valenta; Christoph Schmitz; Andrea Locatelli; Tevfik Onur Menteş; Steven P Rogers; Alessandro Sala; Nicolas Raab; Slavomir Nemsak; Moonsub Shim; Claus M Schneider; Stephan Menzel; Rainer Waser; Regina Dittmann
Journal:  ACS Nano       Date:  2017-07-06       Impact factor: 15.881

4.  Satisfiability Attack-Resistant Camouflaged Two-Dimensional Heterostructure Devices.

Authors:  Akshay Wali; Shamik Kundu; Andrew J Arnold; Guangwei Zhao; Kanad Basu; Saptarshi Das
Journal:  ACS Nano       Date:  2021-01-28       Impact factor: 15.881

5.  Secure Electronics Enabled by Atomically Thin and Photosensitive Two-Dimensional Memtransistors.

Authors:  Aaryan Oberoi; Akhil Dodda; He Liu; Mauricio Terrones; Saptarshi Das
Journal:  ACS Nano       Date:  2021-12-16       Impact factor: 15.881

6.  On the Control of the Fixed Charge Densities in Al2O3-Based Silicon Surface Passivation Schemes.

Authors:  Daniel K Simon; Paul M Jordan; Thomas Mikolajick; Ingo Dirnstorfer
Journal:  ACS Appl Mater Interfaces       Date:  2015-12-16       Impact factor: 9.229

Review 7.  Insulators for 2D nanoelectronics: the gap to bridge.

Authors:  Yury Yu Illarionov; Theresia Knobloch; Markus Jech; Mario Lanza; Deji Akinwande; Mikhail I Vexler; Thomas Mueller; Max C Lemme; Gianluca Fiori; Frank Schwierz; Tibor Grasser
Journal:  Nat Commun       Date:  2020-07-07       Impact factor: 14.919

8.  Self-clocking fast and variation tolerant true random number generator based on a stochastic mott memristor.

Authors:  Gwangmin Kim; Jae Hyun In; Young Seok Kim; Hakseung Rhee; Woojoon Park; Hanchan Song; Juseong Park; Kyung Min Kim
Journal:  Nat Commun       Date:  2021-05-18       Impact factor: 14.919

9.  A hardware Markov chain algorithm realized in a single device for machine learning.

Authors:  He Tian; Xue-Feng Wang; Mohammad Ali Mohammad; Guang-Yang Gou; Fan Wu; Yi Yang; Tian-Ling Ren
Journal:  Nat Commun       Date:  2018-10-17       Impact factor: 14.919

10.  Understanding memristive switching via in situ characterization and device modeling.

Authors:  Wen Sun; Bin Gao; Miaofang Chi; Qiangfei Xia; J Joshua Yang; He Qian; Huaqiang Wu
Journal:  Nat Commun       Date:  2019-08-01       Impact factor: 14.919

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