| Literature DB >> 35284198 |
Jongyup Lim1, Jungho Lee1, Eunseong Moon1, Michael Barrow1, Gabriele Atzeni2, Joseph Letner1, Joseph Costello1, Samuel R Nason1, Paras R Patel1, Parag G Patil1, Hun-Seok Kim1, Cynthia A Chestek1, Jamie Phillips1,3, David Blaauw1, Dennis Sylvester1, Taekwang Jang2.
Abstract
A key challenge for near-infrared (NIR) powered neural recording ICs is to maintain robust operation in the presence of parasitic short circuit current from junction diodes when exposed to light. This is especially so when intentional currents are kept small to reduce power consumption. We present a neural recording IC that is tolerant up to 300 μW/mm2 light exposure (above tissue limit) and consumes 0.57 μW at 38°C, making it lowest power among standalone motes while incorporating on-chip feature extraction and individual gain control.Entities:
Year: 2021 PMID： 35284198 PMCID： PMC8910782 DOI： 10.23919/VLSICircuits52068.2021.9492459
Source DB: PubMed Journal: Symp VLSI Circuits ISSN： 2166-9600