| Literature DB >> 35164386 |
Sergio Gámez-Valenzuela1, Angela Benito-Hernández2, Marcelo Echeverri2, Enrique Gutierrez-Puebla2, Rocío Ponce Ortiz1, Maria Carmen Ruiz Delgado1, Berta Gómez-Lor2.
Abstract
Three crystalline N-trimethyltriindoles endowed with different functionalities at 3, 8 and 13 positions (either unsubstituted or with three methoxy or three acetyl groups attached) are investigated, and clear correlations between the electronic nature of the substituents and their solid-state organization, electronic properties and semiconductor behavior are established. The three compounds give rise to similar columnar hexagonal crystalline structures; however, the insertion of electron-donor methoxy groups results in slightly shorter stacking distances when compared with the unsubstituted derivative, whereas the insertion of electron-withdrawing acetyl groups lowers the crystallinity of the system. Functionalization significantly affects hole mobilities with the triacetyl derivative showing the lowest mobility within the series in agreement with the lower degree of order. However, attaching three methoxy groups also results in lower hole mobility values in the OFETs (0.022 vs. 0.0014 cm2 V-1 s-1) in spite of the shorter stacking distances. This counterintuitive behavior has been explained with the help of DFT calculations performed to rationalize the interplay between the intramolecular and intermolecular properties, which point to lower transfer integrals in the trimethoxy derivative due to the HOMO wave function extension over the peripheral methoxy groups. The results of this study provide useful insights into how peripheral substituents influence the fundamental charge transport parameters of chemically modified triindole platforms of fundamental importance to design new derivatives with improved semiconducting performance.Entities:
Keywords: DFT-calculations; OFETs; Raman; organic semiconductors; triindole
Year: 2022 PMID: 35164386 PMCID: PMC8839582 DOI: 10.3390/molecules27031121
Source DB: PubMed Journal: Molecules ISSN: 1420-3049 Impact factor: 4.411
Figure 1Chemical structures of the three triindole-based systems 1–3 reported in this work.
Figure 2(a) Normalized absorption UV-vis spectra of 1–3 in CH2Cl2 at c = 5 × 10−6 molL−1; (b) cyclic voltammograms of 1–3 at c = 10−5 mol L−1 recorded in CH2Cl2/0.1 M TBAH using a Pt working electrode.
Figure 3DFT-calculated molecular orbital energies and topologies for 1–3 compounds at the B3LYP/6-31G** level of theory.
Main electrochemical properties of compounds 1–3.
| Compound | R | Eox (V) | HOMO (eV) 1 | LUMO (eV) 1 |
|---|---|---|---|---|
|
| H | 0.71 | −5.08 (−4.83) | −1.72 (−0.53) |
|
| OCH3 | 0.69 | −5.04 (−4.67) | −1.95 (−0.50) |
|
| COCH3 | 1.04 | −5.39 (−5.44) | −2.73 (−1.47) |
1 Values in parentheses refer to B3LYP/6-31G** theoretical data.
Figure 4(a) Solid-state FT-Raman (λexc = 1064 nm) spectra for 1–3 compounds; (b) B3LYP/6-31G** vibrational eigenvectors associated with the most outstanding C=C/C−C Raman features of 2, taken as representative example. The experimental and theoretical (in parentheses) wavenumbers are also shown.
Figure 5View of the packing of 1 (a) and 2 (b) along the crystallographic c axis.
Figure 6DFT-computed global minimum structures for a trimer model of 1 and 2. The average centroid–centroid distance of the central aromatic rings between adjacent molecules is also shown.
Figure 7TFT transfer (top) and output (bottom) characteristics of triindoles 1 (a), 2 (b) and 3 (c). The transfer characteristics were measured at a constant source–drain voltage of −80 V. The output curves were measured at gate voltages varying from 20 to −80 V in intervals of 10 V.
OFET electrical data for vapor deposited film of 1–3 semiconductors measured at ambient conditions. Average and the best (in parenthesis) values are shown.
| Compound | Deposition Conditions | VT(V) | ION/IOFF | |
|---|---|---|---|---|
|
| OTS, 60° | 2.2 × 10−2 | −13 | 1 × 107 |
|
| OTS, 90° | 1.4 × 10−3 | −4 | 6 × 103 |
|
| OTS, 120° | 3.1 × 10−5 | −17 | 2 × 102 |