Elena Blundo1, Alessandro Surrente1,2, Davide Spirito3, Giorgio Pettinari4, Tanju Yildirim5, Carlos Alvarado Chavarin3, Leonetta Baldassarre1,3, Marco Felici1, Antonio Polimeni1. 1. Physics Department, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185 Rome, Italy. 2. Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Wroclaw 50-370, Poland. 3. IHP-Leibniz Institut fur Innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany. 4. Institute for Photonics and Nanotechnologies (CNR-IFN), National Research Council, 00156 Rome, Italy. 5. Center for Functional Sensor & Actuator (CFSN), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan.
Abstract
Hexagonal boron nitride (hBN) is widely used as a protective layer for few-atom-thick crystals and heterostructures (HSs), and it hosts quantum emitters working up to room temperature. In both instances, strain is expected to play an important role, either as an unavoidable presence in the HS fabrication or as a tool to tune the quantum emitter electronic properties. Addressing the role of strain and exploiting its tuning potentiality require the development of efficient methods to control it and of reliable tools to quantify it. Here we present a technique based on hydrogen irradiation to induce the formation of wrinkles and bubbles in hBN, resulting in remarkably high strains of ∼2%. By combining infrared (IR) near-field scanning optical microscopy and micro-Raman measurements with numerical calculations, we characterize the response to strain for both IR-active and Raman-active modes, revealing the potential of the vibrational properties of hBN as highly sensitive strain probes.
Hexagonal boron nitride (hBN) is widely used as a protective layer for few-atom-thick crystals and heterostructures (HSs), and it hosts quantum emitters working up to room temperature. In both instances, strain is expected to play an important role, either as an unavoidable presence in the HS fabrication or as a tool to tune the quantum emitter electronic properties. Addressing the role of strain and exploiting its tuning potentiality require the development of efficient methods to control it and of reliable tools to quantify it. Here we present a technique based on hydrogen irradiation to induce the formation of wrinkles and bubbles in hBN, resulting in remarkably high strains of ∼2%. By combining infrared (IR) near-field scanning optical microscopy and micro-Raman measurements with numerical calculations, we characterize the response to strain for both IR-active and Raman-active modes, revealing the potential of the vibrational properties of hBN as highly sensitive strain probes.
Hexagonal
boron nitride (hBN), a wide-gap layered material,[1] features a marked chemical inertness[2,3] and
mechanical robustness.[4] Thanks to
these properties, hBN is an ideal substrate or capping material for
two-dimensional crystals,[5−10] protecting them from oxidation[11] and
bringing about a substantial improvement of the charge-carrier mobility
and of the light emission characteristics.[7,8,12] Indeed, hBN capping is routinely employed
to fabricate high-quality heterostructures (HSs), wherein intriguing
carrier potential landscapes can be realized.[13,14] The fabrication process relies on mechanical stacking, often leading
to the emergence of strain in the different layers and to important
modifications of their electronic states.[15] hBN is also attracting increasing interest for its intrinsic properties,
sustaining the propagation of hyperbolic phonon-polaritons (HPPs)[16,17] and hosting single-photon emitters operating at room temperature.[18−22] Its remarkable mechanical robustness (breaking strengths of ∼70
GPa and Young’s modulus of ∼800 GPa[4,23,24]) was exploited for high-quality mechanical
resonators[25] and to reversibly tune the
emission wavelength of single-photon emitters via stretching.[26] Strained wrinkles were also found to be ideal
candidates for launching HPPs.[27] It follows
that in hBN, like in other two-dimensional materials, strain plays
a relevant role.[24] Different methods were
employed to induce strain in thin layers of hBN, for example, by deposition
on substrates subject to stretching,[26] bending,[28] or thermal compression[29] or by nanoindentation.[4] Great attention
was also attracted by the formation of hBN bubbles ensuing gas trapping,[30] hydrogen-plasma exposure,[31] or pressure-induced bulging.[23] Such bubbles may be the ultimate platforms for probing the elastic/adhesive
properties of two-dimensional materials, owing to the strong interplay
between these properties and the bubble morphology.[23,32−34] Although hBN bubbles are expected to host sizable
strains, as theoretically predicted and experimentally confirmed in
similar graphene[35] and transition-metal
dichalcogenide (TMD) structures,[33,36−40] where total strains of 1–5% were achieved, no clear evidence
of strain has been provided so far. More generally, the effect of
strain on the vibrational properties of thin hBN has surprisingly
not received systematic attention, with only a few Raman studies published
to date, focusing on the moderate strain regime (<0.4%).[28,29,41]Here we report on a method
to mechanically deform hBN based on
the low-energy hydrogen (H) or deuterium (D) ion irradiation of multilayer
flakes. Depending on the flake thickness, H/D-ion treatments lead
to the formation of nano/micrometric bubbles or wrinkles. Unlike methods
based on the deposition of ultrathin films,[30] the proposed technique permits the formation of wrinkles and bubbles
with a high density and on flakes with virtually unrestricted size.
In addition, we can control the thickness of the bubbles from a few
layers to tens of layers by tuning the energy or changing the isotope
of the ion beam. We employed an infrared (IR) scanning near-field
optical microscope (SNOM) to perform nanoscale Fourier transform IR
(nano-FTIR) measurements and an optical microscope to perform micro-Raman
(μ-Raman) measurements. Across the bubble surfaces, we observe
record large shifts of both the IR-active and Raman-active modes in
excess of 50 cm–1. With the support of numerical
modeling of the strain distribution, we extract the Grüneisen
parameters of hBN and, by performing linearly polarized Raman spectroscopy,
its shear deformation potential.
Results
and Discussion
We exfoliated thick hBN flakes from commercial
hBN crystals (HQ
graphene). The flakes were deposited on Si/SiO2 substrates
and initially characterized by atomic force microscopy (AFM); see
the Supporting Information, Methods. The
samples were subjected to H (or D)-ion irradiation by a Kaufman ion
gun[37,42] under high vacuum conditions at 150 °C,
with the samples electrically grounded to avoid charging. For details,
see the Supporting Information, Methods. To avoid the formation of defects, we employed low ion-beam energies
of <35 eV. After the treatment, optical microscope images of the
flakes may reveal a slightly nonhomogeneous coloration related to
the presence of barely visible circular or elongated features; see Supporting Figure S1. AFM measurements demonstrate
the presence of bubbles, wrinkles, or both on the flakes, as shown
in Figure a–c
and Supporting Figure S2. A statistical
AFM study (see Supporting Figure S3) allows
us to establish a correspondence between the different morphologies
and the flake thickness t: For t ≳ 10 nm, only bubbles form (Figure a); for t ≃10 nm,
both bubbles and wrinkles can be observed (Figure b); and in thin flakes with t ≲ 10 nm, wrinkles and irregular structures predominate (Figure c). In the latter
case, molecular hydrogen likely forms, accumulates, and percolates
at the flake/substrate interface, giving rise to irregular structures
and wrinkles (Figure c); see also Supporting Figure S3. On
the contrary, the formation of spherically shaped bubbles in thick
flakes (t ≳ 10 nm) can be attributed to the
formation and trapping of molecular hydrogen in the hBN interlayers,
as observed in H-plasma-treated hBN,[31] and
in TMDs.[37] We thus hypothesize that protons
with kinetic energies of ∼10–30 eV penetrate through
hBN for ∼10 nm and that the formation of wrinkles or bubbles
depends on where H2 remains caged. To support this hypothesis,
we intentionally induced the explosion of some bubbles via a high-power
(some milliwatts), highly focused laser beam and measured the height
difference between the crater of the exploded bubble and the flake
surface outside the crater by AFM. In samples irradiated with H ions
(beam energies <34 eV) (see Supporting Figure S4), we measured thicknesses ranging from 1.8 to 12 nm (corresponding
to about 5 to 36 monolayers). To form thinner bubbles, instead, we
irradiated some samples with deuterium ions (beam energies <25
eV), which are known to penetrate less through hBN with respect to
protons,[43] and we measured bubble thicknesses
as thin as ∼0.5 nm (i.e., a couple of layers); see Supporting Figure S4. This demonstrates the remarkable
flexibility of our method, which, unlike H-plasma-based methods,[31] enables us to obtain bubbles thinner than 10
monolayers. The long durability of the bubbles and Raman studies of
the irradiated flakes (see Supporting Figure S5) suggest that the low-energy beams employed here do not induce a
sizable amount of defects in the crystal, unlike higher energy heavier
atom beams.[44−50]
Figure 1
Formation
of hydrogen-filled bubbles and of wrinkles in hBN. (a–c)
AFM images of multilayer hBN flakes after H irradiation. The flakes
have thicknesses of (a) 55, (b) 10, and (c) 5 nm (thin part corresponding
to the top side of the figure), and the images show the presence of
only bubbles, both bubbles and wrinkles, and only wrinkles, respectively.
(d,e) 3D AFM images of half a bubble (panel d, where R = 2.06 μm and hm = 225 nm) and
part of a wrinkle (panel e, where R = 144 nm and hm = 88 nm). The definitions of maximum height
(hm) and footprint radius (R) are depicted. (f) Statistical analysis of the aspect ratios (hm/R) measured in wrinkles and
bubbles. The dashed lines represent the average aspect ratios estimated
for each set of data.
Formation
of hydrogen-filled bubbles and of wrinkles in hBN. (a–c)
AFM images of multilayer hBN flakes after H irradiation. The flakes
have thicknesses of (a) 55, (b) 10, and (c) 5 nm (thin part corresponding
to the top side of the figure), and the images show the presence of
only bubbles, both bubbles and wrinkles, and only wrinkles, respectively.
(d,e) 3D AFM images of half a bubble (panel d, where R = 2.06 μm and hm = 225 nm) and
part of a wrinkle (panel e, where R = 144 nm and hm = 88 nm). The definitions of maximum height
(hm) and footprint radius (R) are depicted. (f) Statistical analysis of the aspect ratios (hm/R) measured in wrinkles and
bubbles. The dashed lines represent the average aspect ratios estimated
for each set of data.We performed AFM measurements
to study the morphological properties
of bubbles and wrinkles and measured their aspect ratio hm/R, where hm is the maximum height of the object and R is its
half width. (See Figure d,e). The results are summarized in Figure f. The wrinkles feature a narrow width distribution
and aspect ratios in the 0.3 to 0.6 range. The bubbles show a much
wider size distribution and a size-independent aspect ratio, as expected
based on previous theoretical[30,32,51] and experimental[30−32,37,38,52] studies. For our bubbles, we
find hm/R = 0.115 ±
0.011, in agreement with that reported for hydrocarbon-filled monolayer
bubbles[30] and multilayer bubbles created
by H-plasma treatments.[31] The constant
aspect ratio, independent of size and thickness, testifies that the
mechanics of the bubbles is dominated by stretching, whereas the bending
contribution is negligible,[32,53] at variance with other
kinds of bent, yet not pressurized, systems.[54] Importantly, the strain scales as (hm/R)2;[32] therefore,
a similar strain distribution is expected independent of the bubble
formation method and thickness. Next, we address such distribution
on hBN bubbles.One of the most common means for evaluating
the amount of strain
in two-dimensional materials is provided by a quantitative analysis
of the frequency of the lattice vibration normal modes.[24] Typically, lattice stretching (i.e., tensile
strain) induces a softening of the phonon modes. Furthermore, under
anisotropic strains, the double-degenerate in-plane modes split as
a result of the lowered crystal symmetry. The shift rate and splitting
rate of the vibrational modes can thus be conveniently used to assess
the strain magnitude and its anisotropy degree in atomically thin
membranes.[24] This is especially important
when the actual strain differs from the expected strain, like in many
bending or stretching devices,[24] or cannot
be estimated theoretically. In this work, we focus on two specific
in-plane transverse modes, which are IR-active (E1u) and
Raman-active (E2g). Their lattice displacements are sketched
in Figure .
Figure 2
Sketch of the
atom displacements corresponding to the IR-active
E1u mode and to the Raman-active E2 mode. Differently colored arrows indicate opposite atom motions.
Sketch of the
atom displacements corresponding to the IR-active
E1u mode and to the Raman-active E2 mode. Differently colored arrows indicate opposite atom motions.Figure a displays
the AFM image of a circular hBN bubble with diameter D = 2R = 4.54 μm and height hm = 267 nm (hm/R = 0.117) obtained by D irradiation. The AFM profile recorded along
the cyan dashed line is shown in Figure b (circles). The yellow line is the profile
evaluated by finite element method (FEM) numerical calculations; see
the Supporting Information, Methods. The
latter also provides the strain distribution,[32,37] as shown on the left side of Figure c, where εr and εθ are the radial and circumferential in-plane strain components in
polar coordinates, respectively.[32,53] The calculated
spatial distribution of the total strain εtot = εr + εθ is displayed as a false-color
image on the right side of panel c. Strain features an anisotropic
character, changing from tensile uniaxial at its edge (r/R = 1, εr ≠ 0 and εθ = 0) to tensile equi-biaxial at the summit of the bubble
(r/R = 0, εr =
εθ). On these premises, we expect the in-plane
transverse phonon frequency ω to
undergo a decrease with respect to unstrained hBN due to stretching,
as well as a splitting in ω+ and ω–, the
extent of which depends on the position on the bubble. Thus we introduce
the average frequencyand mode splittingThe frequency variation upon
strain can be quantified by the shift rateand splitting ratewhere εtot(r) = εr(r) +
εθ(r) and εdiff(r) = εr(r) –
εθ(r).
Figure 3
IR-active mode versus
strain. (a) 2D AFM image of a hBN bubble
exhibiting a circular symmetric shape but on its edge, where smaller
satellite bubbles nucleated. The bubble has R = 2.27
μm and hm = 267 nm (hm/R = 0.117) and was created in a deuterated
sample (beam energy equal to 6 eV) to minimize the bubble thickness.
(b) Comparison between the AFM profile acquired along a diameter of
the bubble (highlighted in panel a by a cyan dashed line) and the
profile obtained by FEM calculations. (c) Left: Radial dependence,
obtained by FEM calculations, of the in-plane circumferential (εθ) and radial (εr) strain components,
a sketch of which is depicted as the inset. Right: Spatial distribution
of the total in-plane strain εtot = εr + εθ. (d,e) Color map of the near-field amplitude S(ω,r) (d) and corresponding spectra
(e), where the IR-active mode (E1u) is visible. The measurements
were taken along the gray short dashed line shown in panel a. The
second harmonic is considered here. (f) IR phonon frequency dependence
on the radial distance r, as deduced from the spectra
shown in panel e and the AFM profile. The third-harmonic data are
also included here. The black solid line is a fit to the data assuming
a linear dependence of the phonon frequency on εtot, provided by eqs and 5.
IR-active mode versus
strain. (a) 2D AFM image of a hBN bubble
exhibiting a circular symmetric shape but on its edge, where smaller
satellite bubbles nucleated. The bubble has R = 2.27
μm and hm = 267 nm (hm/R = 0.117) and was created in a deuterated
sample (beam energy equal to 6 eV) to minimize the bubble thickness.
(b) Comparison between the AFM profile acquired along a diameter of
the bubble (highlighted in panel a by a cyan dashed line) and the
profile obtained by FEM calculations. (c) Left: Radial dependence,
obtained by FEM calculations, of the in-plane circumferential (εθ) and radial (εr) strain components,
a sketch of which is depicted as the inset. Right: Spatial distribution
of the total in-plane strain εtot = εr + εθ. (d,e) Color map of the near-field amplitude S(ω,r) (d) and corresponding spectra
(e), where the IR-active mode (E1u) is visible. The measurements
were taken along the gray short dashed line shown in panel a. The
second harmonic is considered here. (f) IR phonon frequency dependence
on the radial distance r, as deduced from the spectra
shown in panel e and the AFM profile. The third-harmonic data are
also included here. The black solid line is a fit to the data assuming
a linear dependence of the phonon frequency on εtot, provided by eqs and 5.Equivalently, one can
introduce dimensionless quantities, such
as the Grüneisen parameterand the shear deformation
potentialwhere ω0 is the mode frequency in the absence
of strain.The E1u mode (see lattice displacements
in Figure ) was studied
by
nano-FTIR SNOM measurements;[55,56] see the Supporting Information, Methods. This technique
has been widely employed in two-dimensional systems, for example,
to probe phonon-polaritons in hBN,[27,57,58] phonons in hBN superlattices,[59] electron–phonon interactions in graphene,[60] and intersubband transitions in two-dimensional
quantum wells,[61] but the E1u hBN mode sensitivity to strain has not been investigated, to our
knowledge. Figure d shows the normalized near-field amplitude S(ω,r), as obtained with a spectral line scan along the gray
short dashed line in Figure a. The near-field signal originates from the tip–sample
interaction and provides a lateral resolution of ∼20 nm; see
the Supporting Information, Methods. The
corresponding spectra are shown in Figure e. The phonon peak frequency from the bulk
region outside the bubble is ω1u = 1367 cm–1, in agreement with previous reports.[62] An abrupt decrease in ω1u is noticed when the tip
approaches the bubble’s edge, where a 0.9% tensile strain is
already present. (See Figure c.) On moving further toward the bubble center, ω1u seamlessly decreases, in agreement with the expected tensile
strain increase. To quantify the mode shift variation versus the total
strain εtot(r), we established a
one-to-one correspondence between the AFM-derived bubble profile (h vs r) and the calculated strain components
shown in Figure c.
In turn, this allowed us to establish a correspondence between each
measured ω1u and εtot(r), given that the h(r) values were
measured by the SNOM tip at the very same points where ω1u was probed. To reduce the background signal, we collected
the near-field data at several harmonics. In Figure f, we show the spatial dependence of the
second and third harmonics of the signal associated with the E1u phonon. (See the Supporting Information, Methods and Supporting Note 1.) We reproduce quite successfully
the dependence of ω1u on r using
as fitting parameters the mode frequency at zero strain ω1u0 = (1369.7 ±
2.4) cm–1 and the shift rate Δ1u = (29.5 ± 1.4) cm–1/%, resulting in a Grüneisen
parameter (see eq )
γ1u = 2.15 ± 0.10. Analogous measurements were
performed on other bubbles; see Supporting Note 1 and Table .
Table 1
Effect of Strain on the Vibrational
Modesa
mode
ωt0 (cm–1)
Δ (cm–1/%)
γt
Σt (cm–1/%)
βt
βt/γt
E1u (IR)
1369.9 ± 2.3
29.4 ± 1.8
2.15 ± 0.12
1369.7 ± 2.4
29.5 ± 1.4
2.15 ± 0.10
1369.0 ± 5.2
36.2 ± 3.6
2.64 ± 0.27
E2g (Raman)
1370b
24.6 ± 0.60
1.79 ± 0.04
11.2 ± 1.9
0.82 ± 0.14
0.46 ± 0.08
1370b
25.1 ± 4.5
1.83 ± 0.33
1370b
28.5 ± 8.4
2.08 ± 0.61
15.6 ± 3.8
1.14 ± 0.28
0.56 ± 0.14
1370b
33.2 ± 5.2
2.43 ± 0.40
Parameters obtained for the E1u and E2g from the nano-FTIR and Raman measurements,
respectively, The frequency at zero strain (ω ), shift rate (Δ), Grüneisen parameter (γ ), splitting rate (Σ ), shear deformation potential (β ), and ratio γ/β were estimated for several bubbles.
This value was kept fixed because
it was otherwise affected by too large uncertainties.
Parameters obtained for the E1u and E2g from the nano-FTIR and Raman measurements,
respectively, The frequency at zero strain (ω ), shift rate (Δ), Grüneisen parameter (γ ), splitting rate (Σ ), shear deformation potential (β ), and ratio γ/β were estimated for several bubbles.This value was kept fixed because
it was otherwise affected by too large uncertainties.It should be noticed that the zero-strain
limit ω1u0 (∼1370
cm–1) of the bubble E1u mode is larger
than that of bulk hBN (∼1367 cm–1). This
is consistent with the frequency increase reported for the Raman-active
E2g mode in the few-layer limit.[29,63,64]Let us now discuss our studies of
the E2g mode. (See
the lattice displacements in Figure .) We performed μ-Raman measurements of the hBN
bubble (R = 1.61 μm, hm = 179 nm, hm/R = 0.111, created
by D irradiation), whose AFM image is shown as the inset of Figure c. Figure a is the spectrally and spatially
resolved intensity map of the light scattered by the bubble in the
spectral region of the E2g mode. The map was recorded along
a diameter (see the inset of panel c), and the corresponding spectra
are shown in Figure b. The spot size and spectral resolution are ∼0.5 μm
and 0.7 cm–1, respectively; see the Supporting Information, Methods. The intense
peak at 1366.2 cm–1 comes from the bulk hBN flake
from which the bubble swelled. The E2g signal from the
bubble is much less intense due to the reduced thickness and exhibits
a spatially dependent and lower frequency due to strain. We notice
that unlike the IR signal, the Raman signal becomes negligibly small
as the laser approaches the edge of the bubble due to optical interference
effects.[37,39] The correspondence between the measured
ω2g values and εtot(r) = εr(r) + εθ(r) is established by evaluating the strain via
FEM calculations based on the AFM profile; see Supporting Figure S6. The spatial dependence of ω2g is shown in Figure c, and it is best reproduced with a shift rate Δ2g = (28.5 ± 8.4) cm–1/% and a Grüneisen
parameter (see eq )
γ2g = 2.08 ± 0.61. The extrapolation frequency
at zero strain was set at 1370 cm–1, which is greater
than the corresponding bulk mode (1366.2 cm–1),
like in the case of the E1u IR-active mode and consistent
with published results.[29,63,64] Similar measurements performed on different bubbles are shown in Supporting Note 2, and the estimated parameters
are displayed in Table . We also performed a statistical analysis of the shift at the bubble
summit including many other bubbles, giving average Grüneisen
parameters γ2g = 2.04 ± 0.48 (Δ2g = (27.9 ± 6.6) cm–1/%); see Supporting Note 3. Our statistical analysis also shows how
E1u and E2g are characterized by similar Grüneisen
parameters.
Figure 4
Raman-active mode versus strain. (a) False-color image of the intensity
of the E2g Raman mode as a function of the position along
a diameter of a bubble. The bubble has R = 1.61 μm
and hm = 179 nm (hm/R = 0.111) and was created in a deuterated
sample (beam energy equal to 25 eV). (b) Raman spectra corresponding
to the map of panel a. (c) E2g Raman-mode frequencies as
a function of the distance from the center of the bubble. The solid
line is a linear fit to the frequency versus r behavior,
with γ2g being the fitting parameter. Inset: AFM
image of the investigated structure. The dashed line indicates the
diameter along which the spectra were measured.
Raman-active mode versus strain. (a) False-color image of the intensity
of the E2g Raman mode as a function of the position along
a diameter of a bubble. The bubble has R = 1.61 μm
and hm = 179 nm (hm/R = 0.111) and was created in a deuterated
sample (beam energy equal to 25 eV). (b) Raman spectra corresponding
to the map of panel a. (c) E2g Raman-mode frequencies as
a function of the distance from the center of the bubble. The solid
line is a linear fit to the frequency versus r behavior,
with γ2g being the fitting parameter. Inset: AFM
image of the investigated structure. The dashed line indicates the
diameter along which the spectra were measured.Previous μ-Raman studies on hBN bubbles created by H-plasma
treatments[31] reported only a modest shift
of ∼3 cm–1 between the bubble center and
the bulk hBN. Similar small shifts (∼3 cm–1) were observed in hBN monolayers subject to thermal compression
(biaxial strain of −0.17%),[29] resulting
in γ2g = 0.62. Finally, uniaxial strains of up to
0.4% were applied to thin hBN flakes (two to four layers) using a
bending apparatus, achieving frequency softenings of <6 cm–1. Grüneisen parameters γ2g between 1.77 and 2.07 were estimated in this case[28] and were, on average, slightly lower than our estimates.
(See Table .) By comparison
with the current literature, our approach permits us to achieve a
much larger total strain, on average, equal to ∼1.9%, with
unprecedented shifts in excess of 50 cm–1.In addition to the E2g mode shift, a splitting is expected
in the bubbles due to the imbalance between εθ and εr; see Supporting Figure S6. Figure a displays an intensity map formed by polarization-dependent μ-Raman
spectra recorded on a given point of the same bubble of Figure . The point is 790 nm away
from the center (i.e., r/R = 0.49)
and is marked by a black dot superimposed on the strain anisotropy
degree plot in Figure c, with the anisotropy being defined as α = (εr – εθ)/(εr + εθ). Therein, the arrows indicate the strain direction.
The radial distance r was determined by the relationship
between ω2g and r given in Figure c. Each spectrum
of Figure a was recorded
by keeping the polarization direction of the laser fixed at an arbitrary,
unknown angle ϕ0 with respect to a reference crystal
direction (e.g., the armchair/zigzag direction). Likewise, strain
is oriented along the bubble radius, and its direction is thus also
fixed at an unknown angle θ with respect to the same lattice
reference. The angle ϕ between the polarization of the Raman-scattered
and Raman-exciting photons was then varied from 0 to 360°. Whereas
the E2g bulk mode at 1366.2 cm–1 remains
constant in intensity and frequency, the strain-softened E2g mode of the bubble in the 1320–1340 cm–1 range exhibits a marked angular dependence of its center-of-mass
frequency, pointing to a mode splitting. This is exemplified in Figure b, showing two μ-Raman
spectra recorded with opposite polarizations (ϕ = 0 and 90°).
Indeed, it can be demonstrated that the intensities I2g± of the E2g± modes split
by uniaxial strain are given by[24]where c is
a constant. By performing a line-shape fitting of the Raman spectra
(see Supporting Note 4), we extracted I2g± as a function
of ϕ, where E2g+ and E2g– refer to the high- and low-frequency components, respectively. Figure d shows the resulting
polar plot obtained from the data of panel a. The reference angle
(2ϕ0 + θ) is set to zero for simplicity reasons.
The two components are clearly in counter phase, as expected. Figure e shows a similar
set of measurements acquired on a point of the bubble positioned symmetrically
at 90° with respect to the previous one (at r = 680 nm); see the gray dot in panel c. In this case, the strain
direction is given by θ′ = θ + 90°, and as
a consequence of eq , the E2g± components follow an angular dependence that is π/2 out-of-phase
with respect to that of the previous point (Figure d). These results are fully consistent with
the strain field calculated numerically, whereby the εr component dictates the strain direction. Finally, the μ-Raman
spectra recorded at the bubble center (white dot in panel c), where
the strain is equi-biaxial, show no mode splitting; see Figure f. Other polarization maps
were acquired in different points of the bubble. For each point, the
average frequency ω2gav corresponds to a given r value. (See Figure c.) In turn, via numerical simulations (see Supporting Figure S6), we obtain εshear(r) = εdiff(r) = εr(r) – εθ(r). Figure g shows
the dependence of the mode splitting σ2g versus εshear(r). Considering eq , we estimate a splitting rate Σ2g = 15.6 ± 3.8 cm–1/% and a shear deformation
potential β2g = 1.14 ± 0.28. Thus for this bubble,
we get β2g/γ2g = 0.56 ± 0.14.
We performed similar measurements on another bubble with a lower Grüneisen
parameter (see Supporting Note 4) and found
β2g = 0.82 ± 0.14 and β2g/γ2g = 0.46 ± 0.08 (see Table ), showing how the ratio β2g/γ2g is less affected by fluctuations than β2g and γ2g. We are aware of only one previous
report of the hBN shear potential in the few-layer limit, where the
ratio β2g/γ2g was found to vary
between 0.45 and 0.52.[28]
Figure 5
(a) False-color map of
the intensity of the E2g Raman
mode as a function of the angle of the polarization analyzer. The
dashed line is a sinusoidal guide to the eye. (b) μ-Raman spectra
measured with polarizations parallel and perpendicular to the uniaxial
strain direction. (c) Radial dependence of the strain anisotropy α
= (εr – εθ)/(εr + εθ), based on FEM calculations.
The arrows point to the direction of the strain field. Their length
is calculated as log10(100α). The dots depict the
position of the excitation spots of the polarization-resolved Raman
measurements. (d–f) Intensity of the low-frequency (ω1u–) and high-frequency
(ω1u+)
Raman modes as a function of the analyzer angle for excitation performed
(d) on the right (black dot), (e) at the bottom (gray dot), and (f)
at the center of a bubble (white dot). (g) Mode splitting as a function
of the shear strain. The solid line is a linear fit.
(a) False-color map of
the intensity of the E2g Raman
mode as a function of the angle of the polarization analyzer. The
dashed line is a sinusoidal guide to the eye. (b) μ-Raman spectra
measured with polarizations parallel and perpendicular to the uniaxial
strain direction. (c) Radial dependence of the strain anisotropy α
= (εr – εθ)/(εr + εθ), based on FEM calculations.
The arrows point to the direction of the strain field. Their length
is calculated as log10(100α). The dots depict the
position of the excitation spots of the polarization-resolved Raman
measurements. (d–f) Intensity of the low-frequency (ω1u–) and high-frequency
(ω1u+)
Raman modes as a function of the analyzer angle for excitation performed
(d) on the right (black dot), (e) at the bottom (gray dot), and (f)
at the center of a bubble (white dot). (g) Mode splitting as a function
of the shear strain. The solid line is a linear fit.
Conclusions
We irradiated bulk hBN flakes
with low-energy hydrogen or deuterium
ions. The ions penetrate through the crystal for a few nanometers,
and molecular hydrogen or deuterium forms, inducing the blistering
of a few atomic planes and hence the formation of micro/nano-metric
wrinkles or bubbles. Wrinkles or bubbles predominate for flake thicknesses
of t ≲ 10 nm or ≳10 nm, respectively.
The bubbles were investigated in detail because they exhibit tensile
strains with a remarkably high ∼2% maximum value, exceeding
that typically achieved for hBN in bending/stretching devices.[28,29,41] The effects of strain on the
IR-active (E1u) and Raman-active (E2g) in-plane
modes were studied over the bubble surface by spatially resolved nano-FTIR
and polarization-dependent μ-Raman, respectively. The large
amount of strain and its anisotropic character toward the edge of
the bubbles permitted to derive shift and splitting rates on the order
of 30 and 15 cm–1/%, respectively. These values
are comparable to those reported in graphene and are about one order
of magnitude larger than those found in TMDs, InSe, and black phosphorus.[24] These findings show that the vibrational properties
of hBN are extremely sensitive probes of mechanical deformations,
and thus they can be exploited to assess the stress status of two-dimensional
HSs and hBN-based quantum emitters.
Authors: Joshua D Caldwell; Andrey V Kretinin; Yiguo Chen; Vincenzo Giannini; Michael M Fogler; Yan Francescato; Chase T Ellis; Joseph G Tischler; Colin R Woods; Alexander J Giles; Minghui Hong; Kenji Watanabe; Takashi Taniguchi; Stefan A Maier; Kostya S Novoselov Journal: Nat Commun Date: 2014-10-17 Impact factor: 14.919
Authors: Prasoon K Shandilya; Johannes E Fröch; Matthew Mitchell; David P Lake; Sejeong Kim; Milos Toth; Bishnupada Behera; Chris Healey; Igor Aharonovich; Paul E Barclay Journal: Nano Lett Date: 2019-01-29 Impact factor: 11.189
Authors: David Lloyd; Xinghui Liu; Jason W Christopher; Lauren Cantley; Anubhav Wadehra; Brian L Kim; Bennett B Goldberg; Anna K Swan; J Scott Bunch Journal: Nano Lett Date: 2016-08-15 Impact factor: 11.189
Authors: Romain Bourrellier; Sophie Meuret; Anna Tararan; Odile Stéphan; Mathieu Kociak; Luiz H G Tizei; Alberto Zobelli Journal: Nano Lett Date: 2016-06-16 Impact factor: 11.189
Authors: Zheng Liu; Yongji Gong; Wu Zhou; Lulu Ma; Jingjiang Yu; Juan Carlos Idrobo; Jeil Jung; Allan H MacDonald; Robert Vajtai; Jun Lou; Pulickel M Ajayan Journal: Nat Commun Date: 2013 Impact factor: 14.919
Authors: Davide Tedeschi; Elena Blundo; Marco Felici; Giorgio Pettinari; Boqing Liu; Tanju Yildrim; Elisa Petroni; Chris Zhang; Yi Zhu; Simona Sennato; Yuerui Lu; Antonio Polimeni Journal: Adv Mater Date: 2019-09-23 Impact factor: 30.849
Authors: Maria Grazia Betti; Ernesto Placidi; Chiara Izzo; Elena Blundo; Antonio Polimeni; Marco Sbroscia; José Avila; Pavel Dudin; Kailong Hu; Yoshikazu Ito; Deborah Prezzi; Miki Bonacci; Elisa Molinari; Carlo Mariani Journal: Nano Lett Date: 2022-03-16 Impact factor: 12.262
Authors: Maria Grazia Betti; Elena Blundo; Marta De Luca; Marco Felici; Riccardo Frisenda; Yoshikazu Ito; Samuel Jeong; Dario Marchiani; Carlo Mariani; Antonio Polimeni; Marco Sbroscia; Francesco Trequattrini; Rinaldo Trotta Journal: Nanomaterials (Basel) Date: 2022-07-29 Impact factor: 5.719