| Literature DB >> 34145254 |
Clarisse Fournier1, Alexandre Plaud1, Sébastien Roux1, Aurélie Pierret2, Michael Rosticher2, Kenji Watanabe3, Takashi Taniguchi4, Stéphanie Buil1, Xavier Quélin1, Julien Barjon1, Jean-Pierre Hermier1, Aymeric Delteil5.
Abstract
Single photon emitters (SPEs) in low-dimensional layered materials have recently gained a large interest owing to the auspicious perspectives of integration and extreme miniaturization offered by this class of materials. However, accurate control of both the spatial location and the emission wavelength of the quantum emitters is essentially lacking to date, thus hindering further technological steps towards scalable quantum photonic devices. Here, we evidence SPEs in high purity synthetic hexagonal boron nitride (hBN) that can be activated by an electron beam at chosen locations. SPE ensembles are generated with a spatial accuracy better than the cubed emission wavelength, thus opening the way to integration in optical microstructures. Stable and bright single photon emission is subsequently observed in the visible range up to room temperature upon non-resonant laser excitation. Moreover, the low-temperature emission wavelength is reproducible, with an ensemble distribution of width 3 meV, a statistical dispersion that is more than one order of magnitude lower than the narrowest wavelength spreads obtained in epitaxial hBN samples. Our findings constitute an essential step towards the realization of top-down integrated devices based on identical quantum emitters in 2D materials.Entities:
Year: 2021 PMID: 34145254 DOI: 10.1038/s41467-021-24019-6
Source DB: PubMed Journal: Nat Commun ISSN: 2041-1723 Impact factor: 14.919