| Literature DB >> 34766471 |
Ziyu Lin1, Ning Cao1, Zhonghui Sun1, Wenying Li1, Yirong Sun1, Haibo Zhang1, Jinhui Pang1, Zhenhua Jiang1.
Abstract
Confined polymerization is an effective method for precise synthesis, which can further control the micro-nano structure inside the composite material. Polyaniline (PANI)-based composites are usually prepared by blending and original growth methods. However, due to the strong rigidity and hydrogen bonding of PANI, the content of PANI composites is low and easy to agglomerate. Here, based on confined polymerization, it is reported that polyaniline /polyether ether ketone (PANI/PEEK) film with high PANI content is synthesized in situ by a one-step method. The micro-nano structure of the two polymers in the confined space is further explored and it is found that PANI grows in the free volume of the PEEK chain, making the arrangement of the PEEK chain more orderly. Under the best experimental conditions, the prepared 16 µm-PANI/PEEK film has a dielectric constant of 205.4 (dielectric loss 0.401), the 75 µm-PANI/PEEK film has a conductivity of 3.01×10-4 S m-1 . The prepared PANI/PEEK composite film can be further used as electronic packaging materials, conductive materials, and other fields, which has potential application prospects in anti-static, electromagnetic shielding materials, corrosion resistance, and other fields.Entities:
Keywords: confined polymerization; dielectric; polyaniline; polyether ether ketone; polymer crystallization
Year: 2021 PMID: 34766471 PMCID: PMC8728828 DOI: 10.1002/advs.202103706
Source DB: PubMed Journal: Adv Sci (Weinh) ISSN: 2198-3844 Impact factor: 16.806
Figure 1a) Schematic illustration of the method for PANI/PEEK composite films formation. b) Schematic diagram of the reaction in the film. c) Physical image of PEEKt film. d) Physical image of PANI/PEEK film. e) The reaction in the film.
Figure 2a) ATR‐FTIR spectrum of PANI/PEEK films. Deconvoluted XPS spectra: b) The survey spectra of PEEKt and PANI/PEEK films; XPS core spectra of c) C 1s, and d) N 1s of PEEKt and PANI/PEEK films. Nano IR of PANI/PEEK films: e) AFM‐Phase image, f) Nano IR, Absorption peak at 1650 cm−1, g) Nano IR, Absorption peak at 1306 cm−1. Scale bar was 20 µm. h) AFM‐Phase image, i) Nano IR, Absorption peak at 1650 cm−1, j) Nano IR, Absorption peak at 1306 cm−1. Scale bar was 1 µm.
Figure 3a–c) The cross‐sectional SEM images of 75 µm‐PANI/PEEK films. HRTEM of the as‐prepared films: d) PEEK film (PEEKt treated with HCl); e) 75 µm‐PANI/PEEK film. f) 220‐PANI/PEEK (The PANI/PEEK film was annealed at 220 °C). SAED of the as‐prepared films: g) PEEK film (PEEKt treated with HCl); h) 75 µm‐PANI/PEEK film. i) 220‐PANI/PEEK (The PANI/PEEK film was annealed at 220 °C). The inset images are the illustration of the distribution of the lattice. XRD of j) PEEKt film treated with HCl and PANI/PEEK film. k) 220‐PANI/PEEK (The PANI/PEEK film was annealed at 220 °C).
Figure 4a) The dielectric constant and dielectric loss and b) the conductivity of PANI/PEEK films with different thicknesses from 8 to 110 µm at 1000 Hz and room temperature. Dependence of c) the dielectric constant, d) dielectric loss, and e) conductivity on the frequency of PANI/PEEK films with different thicknesses from 8 to 110 µm at 1000 Hz and room temperature.