| Literature DB >> 34719881 |
Lazar L Kish1, Alex Thaler1,2, Minseong Lee3, Alexander V Zakrzewski1, Dalmau Reig-I-Plessis1,4, Brian A Wolin1, Xu Wang1, Kenneth C Littrell2, Raffi Budakian1,5, Haidong Zhou1,6, Zheng Gai7, Matthias D Frontzek2, Vivien S Zapf3, Adam A Aczel2, Lisa DeBeer-Schmitt2, Gregory J MacDougall1.
Abstract
The manipulation of mesoscale domain wall phenomena has emerged as a powerful strategy for designing ferroelectric responses in functional devices, but its full potential is not yet realized in the field of magnetism. This work shows a direct connection between magnetic response functions in mechanically strained samples of Mn3 O4 and MnV2 O4 and stripe-like patternings of the bulk magnetization which appear below known magnetostructural transitions. Building off previous magnetic force microscopy data, a small-angle neutron scattering is used to show that these patterns represent distinctive magnetic phenomena which extend throughout the bulk of two separate materials, and further are controllable via applied magnetic field and mechanical stress. These results are unambiguously connected to the anomalously large magnetoelastic and magnetodielectric response functions reported for these materials, by performing susceptibility measurements on the same crystals and directly correlating local and macroscopic data.Entities:
Keywords: domain walls; magnetodielectrics; magnetoelastics; magnetostructural transitions; small-angle neutron scattering
Year: 2021 PMID: 34719881 PMCID: PMC8655211 DOI: 10.1002/advs.202101402
Source DB: PubMed Journal: Adv Sci (Weinh) ISSN: 2198-3844 Impact factor: 16.806
Figure 1Magnetic domain structure via MFM and SANS. MFM images of stripe patterning on the (00L) surfaces of a) MMO and b) MVO, taken below respective structural transitions. Arrows show approximate crystallographic orientations with respect to the stripes. Reported MVO frequency is shift with respect to natural resonance frequency of the probe. SANS patterns from the (HK0) scattering plane of c) MMO at T = 1.5 K and d) MVO at T = 5 K, with the measured scattering in the paramagnetic phase subtracted off as background.
Figure 2Temperature dependence of SANS intensity. Raw scattering intensity from SANS in the (HK0) plane at selected temperatures above and below the phase transitions in a) MMO and () MVO down to lowest attained temperatures of 7 and 4.9 K, respectively. Transitions are marked and labeled by dashed lines between the panels. Annular ‐cuts in c) MMO and d) MVO, with an integration range of 0.003–0.004 Å−1 with the associated Lorentzian fits superimposed on the data. Integrated intensity of the fin scattering plotted for e) MMO and f) MVO as a function of temperature on both warming and cooling, with marked transitions. Error bars represent one standard deviation in panels (c, d) and one standard error as determined from nonlinear least‐squares fitting in panels (e, f).
Figure 3SANS intensity momentum dependence. Dependence of SANS intensity on Q (110) for a) MMO and b) MVO with fits to the 1D stripe model described in the text superimposed on the data. The inset of (a) shows a real‐space schematic of the model, with stripe domain size and wall size s and s . c Isotropic average of intensity versus Q in MMO at 41 K, showing Porod scattering arising from demagnetization domain walls. d) Field‐induced redistribution of MMO low‐Q intensity versus Q (110). Error bars represent one standard deviation.
Figure 4Domain response to applied magnetic field in SANS. Raw 2D SANS data from MMO as a function of increasing field a) parallel to the hard global axis and b) ϕ = 8° misaligned from global , demonstrating anisotropic response in the fin intensity. c) MMO integrated fin intensity in the range 0.003–0.004 Å−1 as a function of field applied along different directions with respect to global . Intensities were rescaled to match the first data point between orientations. d) MVO integrated fin intensity in the range 0.01–0.12 Å−1 as a function of field along global ‐axis normal to sample plate, for two field cycles as described in the text, with equal scaling for the intensities. Error bars in panels (c, d) represent one standard error as determined from nonlinear least‐squares fitting.
Figure 5Connection between stripe domains and bulk response functions. Dashed lines indicate the inferred location of H d. a) Magnetic hysteresis behavior of MVO at 2 K under various mounting conditions with sample either allowed to freely contract, or glued to the mount with Crystalbond adhesive or Bostik superglue. Two Bostik field‐temperature cycles as described in the main text are shown. b) Time‐dependent magnetization in which field is ramped in 60 mT steps to observe slow relaxations associated with domain wall motion. The inset shows a closer look at co‐existing fast and slow relaxation behavior in the Crystalbond‐mounted sample. c) Magnetic field‐induced change in the quantities measured by our different probes (i.e., SANS integrated fin intensity, virgin magnetization, capacitance), plotted as a percentage of total change versus field. d) Measurement of sample capacitance undergoing time‐dependent field ramps (10 mT steps), plotted as a fractional difference () from the zero‐field cooled capacitance value (C 0). The inset shows the slow relaxations we associate with low‐temperature stripe domain wall motion.
Figure 6Domain‐related peak splitting induced by mounting stress below and above the ordering transitions. Panels show 2D reciprocal space intensity maps of each peak, integrated from ‐0.25 to 0.25 reciprocal lattice units (R. L. U.) along the (0K0) direction. a,b) (008) peak for Crystalbond mounting. c,d) (800) peak for Crystalbond mounting. e,f) (008) peak for Bostik mounting. g,h) (800) peak for Bostik mounting.