| Literature DB >> 34354834 |
Jamie W Gittins1, Chloe J Balhatchet1, Yuan Chen1,2,3, Cheng Liu4, David G Madden5, Sylvia Britto6, Matthias J Golomb7, Aron Walsh7, David Fairen-Jimenez5, Siân E Dutton4, Alexander C Forse1.
Abstract
Two-dimensional electrically conductive <Entities:
Year: 2021 PMID: 34354834 PMCID: PMC8315177 DOI: 10.1039/d1ta04026j
Source DB: PubMed Journal: J Mater Chem A Mater
Fig. 1(a) Schematic demonstrating the general structure of hexasubstituted triphenylene-based conductive MOFs. The π–d conjugated 2D sheets stack to form an extended 3D honeycomb structure. This creates pores/channels that run through the material, with a pore size of 1.8 nm as calculated from the simulated structure of Cu3(HHTP)2. (b) The experimental PXRD pattern of Cu3(HHTP)2 compares well to simulated PXRD patterns of Cu3(HHTP)2 with both eclipsed and near-eclipsed crystal structures. (c) Experimentally obtained Cu K-edge XANES of Cu3(HHTP)2 shows better agreement with the simulated XANES of Cu3(HHTP)2 with a near-eclipsed crystal structure.
Fig. 2(a) Cyclic voltammograms (CVs) obtained at a scan rate of 10 mV s−1 up to 1 V for symmetric EDLCs assembled with Cu3(HHTP)2 composite film electrodes and 1 M NEt4BF4 in acetonitrile electrolyte. The black arrow shows the direction of scanning from the start of the scan. (b) Galvanostatic charge–discharge (GCD) profiles at a variety of current densities confirm this behaviour (see labels for current densities).
Fig. 3Comparison of specific capacitance versus current density graphs for Cu3(HHTP)2 and Ni3(HITP)2 (literature).[27] This demonstrates the similarity in the capacitances of these MOFs in similar symmetric EDLCs. All reported Cg values are single electrode capacitances calculated from 2-electrode EDLC devices.
Fig. 4(a) Specific capacitance, calculated from GCD profiles, against cycle number for increasing final cell voltages (see labels). This illustrates the voltage limit of the symmetric Cu3(HHTP)2 EDLC. All reported Cg values are single electrode capacitances calculated from 2-electrode EDLC devices. (b) Capacitance retention as a function of cycle number when cycling at 1 A g−1 and 0.1 A g−1 up to 1 V.