| Literature DB >> 34282133 |
Guozheng Shi1, Haibin Wang2, Yaohong Zhang3, Chen Cheng1, Tianshu Zhai1, Botong Chen1, Xinyi Liu4, Ryota Jono2, Xinnan Mao1, Yang Liu1, Xuliang Zhang1, Xufeng Ling1, Yannan Zhang1, Xing Meng1, Yifan Chen1, Steffen Duhm1, Liang Zhang1, Tao Li4,5, Lu Wang1, Shiyun Xiong1, Takashi Sagawa6, Takaya Kubo2, Hiroshi Segawa2, Qing Shen3, Zeke Liu7, Wanli Ma8.
Abstract
Almost all surfaces sensitive to the ambient environment are covered by water, whereas the impacts of water on surface-dominated colloidal quantum dot (CQD) semiconductor electronics have rarely been explored. Here, strongly hydrogen-bonded water on hydroxylated lead sulfide (PbS) CQD is identified. The water could pilot the thermally induced evolution of surface chemical environment, which significantly influences the nanostructures, carrier dynamics, and trap behaviors in CQD solar cells. The aggravation of surface hydroxylation and water adsorption triggers epitaxial CQD fusion during device fabrication under humid ambient, giving rise to the inter-band traps and deficiency in solar cells. To address this problem, meniscus-guided-coating technique is introduced to achieve dense-packed CQD solids and extrude ambient water, improving device performance and thermal stability. Our works not only elucidate the water involved PbS CQD surface chemistry, but may also achieve a comprehensive understanding of the impact of ambient water on CQD based electronics.Entities:
Year: 2021 PMID: 34282133 PMCID: PMC8289876 DOI: 10.1038/s41467-021-24614-7
Source DB: PubMed Journal: Nat Commun ISSN: 2041-1723 Impact factor: 14.919
Fig. 1Identification of water adsorption on partially hydroxylated CQD surfaces.
a Schematic representation of surface conditions on octahedral PbS CQDs. The ideal model of PbS CQDs with atomic halide passivation is shown on the left. The proposed surface conditions on the Pb-terminated {111} facet are zoomed on the right. Top: the OA-capped facet with partial surface hydroxylation introduced in the synthetic process[15]; Medium: Atomic iodine-passivated facet after ligand exchange; Below: the aggravation of surface hydroxylation followed by water adsorption under humid air. b The geometric structures of iodine-passivated (left), partially hydroxylated (middle) and water adsorbed PbS {111} facets (right) used in DFT calculation. The Ead and Evac stand for the adsorption energy of H2O and the vacancy formation energy, respectively. The purple spheres stand for iodine atoms, black ones for Pb atoms, yellow ones for S atoms, red ones for O atoms, and white ones for H atoms. c The temperature-dependent O1s XPS spectra of PbS-I film. d Atomic ratio of surface species relative to Pb 4f core recorded at a temperature from 290 K to 450 K. e XAS spectra of PbS CQD films at the oxygen K-edge prepared under different ambient conditions. The “Spin-humid” and “Spin-dry” represent the sample deposited and ligand exchanged under ambient air with a high RH (50–60%) or low RH (<10%), respectively. The XAS spectra of liquid water and different surface chemical species observed in XPS O1s core are also shown. The XAS spectra of liquid water are extracted from Wernet et al. (2004)[2]. Reprinted with permission from AAAS. The spectra difference between “Spin-humid” and “Spin-dry” is calculated for a clearer comparison.
Fig. 2The impact of ambient water on the CQD nanostructure and film morphology.
a–e The TEM images of PbS CQDs prepared under different conditions. The samples were prepared on carbon meshes by (a) droplet deposition (b) followed by ligand exchange and annealing process at 85 °C under dry air, (c–e) or under humid air with different annealing times. The scale bars: left column 10 nm and right column 5 nm. f, g Molecular dynamic simulation of the water effect on hydroxylated CQDs. Atom color: brown, Pb; yellow, S; red, O; white, H. Snapshots of two CQDs with surface hydroxyls covered on {111} facet with a gap distance of 1 nm at 300 K after (f) 10 ps and (j) 1000 ps. The ambient water could work as H-bonding bridges, which significantly promote the close attachment of neighboring CQDs. h, l The focused ion beam (FIB) cross-sectioned bright-field TEM images of CQD stacks prepared through (h) spin coating and (l) CA. Scale bars: 10 nm. The GISAXS patterns of CQD films prepared by (i) spin coating before ligand exchange and (j) after ligand exchange under dry air annealing or (k) under humid air annealing, or by (m) CA deposition before ligand exchange and (n) after ligand exchange under dry air annealing or (o) under humid air annealing. p The illustration of meniscus-guided coating and spin-coating process for the preparation of PbS CQD solids. The densely packed CA films show the self-draining effect against ambient water intrusion.
Fig. 3Spectroscopy and carrier dynamic studies of the CQD solids impacted by ambient water.
a The absorbance, steady-state photoluminescence (PL) spectra of PbS-I CQD films prepared by spin coating and CA under different humidity. b The change of absorbance and PL spectra of spin-coated PbS-I CQD films versus heating time under dry and humid air. c Pseudo-color TA spectra of PbS-I CQD films by spin coating and CA. The color scales for a spin and CA films are the same and proportional to the absorption change in each graph. All samples were pumped by 470 nm laser pulse with the pump flux of 25 J·cm−2. d Transient PL decay of CQD films; inset table: the fast and slow time component fitted by double-exponential function.
Summarized photoelectric properties for the CQD solids prepared under different conditions.
| Deposition Condition | First excitonic peak (meV) | PL peak position (meV) | Stokes shift (meV) | Electron mobility | Trap state density | PL lifetimeb | |||
|---|---|---|---|---|---|---|---|---|---|
| Spin | |||||||||
| Dry air | 1369 | 1146 | 223 | −4.18 | −5.57 | 9.38 × 10−5 | 1.76 × 1016 | 2.82 | 12.49 |
| Humid air | 1372 | 1067 | 305 | −4.00 | −5.42 | 5.47 × 10−5 | 3.21 × 1016 | 0.45 | 1.83 |
| CA | |||||||||
| Dry air | 1356 | 1187 | 169 | −4.23 | −5.62 | 1.77 × 10−4 | 1.72 × 1016 | 3.05 | 14.50 |
| Humid air | 1359 | 1170 | 189 | −4.15 | −5.54 | 8.51 × 10−5 | 2.10 × 1016 | 2.10 | 5.84 |
aThe mobility and trap state density is calculated from the SCLC measurement in Supplementary Fig. 15.
bThe lifetime is fitted from Fig. 3d by a second-order exponential model.
Fig. 4Solar cell performance of CQD devices intervened by ambient water.
a J−V curves of CQD solar cells fabricated through the spin coating and CA under dry air and humid air (RH ~50%–60%), measured under AM 1.5 G solar simulator. b Light-intensity-dependent electron recombination lifetime constants for CQD devices. The relative Bode plots are shown in Supplementary Fig. 18. c–e Band diagrams for CQD cells at VMPP condition for (c) CA devices and (d) spin-coated devices prepared under dry air and (e) under humid air, where E is the electron quasi-Fermi level, and E is the hole quasi-Fermi level. f Stability of CQD devices under room temperature or under continuously heating at 85 °C in ambient air. The parameters evolutions within the early hours are inserted in each graph.
Summarized photovoltaic parameters for the CQD solar cells prepared under different conditions.
| Deposition condition | FF | PCEd | ||||||
|---|---|---|---|---|---|---|---|---|
| Spin | ||||||||
| Drya | 0.62 ± 0.02 | 25.8 ± 0.92 | 63.7 ± 1.33 | 10.2 ± 0.46 | 1.55 | 1.07 × 1016 | 0.67 | 3.87 |
| Humidb | 0.57 ± 0.03 | 23.4 ± 2.38 | 39.0 ± 1.57 | 5.2 ± 1.27 | 1.84 | 2.08 × 1015 | 0.59 | 1.80 |
| CA | ||||||||
| Drya | 0.62 ± 0.01 | 25.9 ± 0.47 | 69.5 ± 0.75 | 11.2 ± 0.22 | 1.35 | 3.39 × 1016 | 0.68 | 5.05 |
| Humidb | 0.60 ± 0.02 | 25.7 ± 1.25 | 64.7 ± 1.27 | 10.0 ± 0.49 | 1.62 | 1.02 × 1016 | 0.63 | 3.13 |
aThe devices were prepared under a humidity-controllable glove box. The dry air is under an RH < 10%.
bThe humid air is under an RH ~50–60%.
cThe integrated J is shown in Supplementary Fig. 22.
dAverage results are based on 16 devices for each condition.
eThe ideality factors (nideal) are linear-fitted from the light intensity-dependent Voc graph in Supplementary Fig. 20.
fThe minimum charge density (nmin) and build-in potential (Vbi) are calculated from the Mott-Schottky plot in Supplementary Fig. 21.
gThe recombination lifetime measured under 500 nm LED illumination of 100 mW·cm−2, as illustrated in Supplementary Fig. 18.