S Schuler1,2, J E Muench2, A Ruocco2, O Balci2, D van Thourhout3, V Sorianello4, M Romagnoli4, K Watanabe5, T Taniguchi5, I Goykhman2,6, A C Ferrari7, T Mueller8. 1. Vienna University of Technology, Institute of Photonics, Vienna, Austria. 2. Cambridge Graphene Centre, University of Cambridge, Cambridge, UK. 3. Ghent University-IMEC, Photonics Research Group, Gent, Belgium. 4. Consorzio Nazionale per le Telecomunicazioni and Inphotec, Pisa, Italy. 5. National Institute for Materials Science, Tsukuba, Japan. 6. Technion-Israel Institute of Technology, Haifa, Israel. 7. Cambridge Graphene Centre, University of Cambridge, Cambridge, UK. acf26@eng.cam.ac.uk. 8. Vienna University of Technology, Institute of Photonics, Vienna, Austria. thomas.mueller@tuwien.ac.at.
Abstract
Graphene integrated photonics provides several advantages over conventional Si photonics. Single layer graphene (SLG) enables fast, broadband, and energy-efficient electro-optic modulators, optical switches and photodetectors (GPDs), and is compatible with any optical waveguide. The last major barrier to SLG-based optical receivers lies in the current GPDs' low responsivity when compared to conventional PDs. Here we overcome this by integrating a photo-thermoelectric GPD with a Si microring resonator. Under critical coupling, we achieve >90% light absorption in a ~6 μm SLG channel along a Si waveguide. Cavity-enhanced light-matter interactions cause carriers in SLG to reach ~400 K for an input power ~0.6 mW, resulting in a voltage responsivity ~90 V/W, with a receiver sensitivity enabling our GPDs to operate at a 10-9 bit-error rate, on par with mature semiconductor technology, but with a natural generation of a voltage, rather than a current, thus removing the need for transimpedance amplification, with a reduction of energy-per-bit, cost, and foot-print.
Graphene integrated photonics provides severn>an class="Chemical">al advantages over conventionalSi photonics. Single layer graphene (SLG) enables fast, broadband, and energy-efficient electro-optic modulators, optical switches and photodetectors (GPDs), and is compatible with any opticalwaveguide. The last major barrier to SLG-based optical receivers lies in the current GPDs' low responsivity when compared to conventional PDs. Here we overcome this by integrating a photo-thermoelectric GPDwith a Si microring resonator. Under critical coupling, we achieve >90% light absorption in a ~6 μm SLG channel along a Siwaveguide. Cavity-enhanced light-matter interactions cause carriers in SLG to reach ~400 K for an input power ~0.6 mW, resulting in a voltage responsivity ~90 V/W, with a receiver sensitivity enabling our GPDs to operate at a 10-9 bit-error rate, on par with mature semiconductor technology, but with a naturalgeneration of a voltage, rather than a current, thus removing the need for transimpedance amplification, with a reduction of energy-per-bit, cost, and foot-print.
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