Literature DB >> 34131610

Imaging the valley and orbital Hall effect in monolayer MoS2.

Fei Xue1,2, Vivek Amin1,2, Paul M Haney1.   

Abstract

The topological properties of a material's electronic structure are encoded in its Berry curvature, a quantity which is intimately related to the transverse electrical conductivity. In transition metal dichalcogenides with broken inversion symmetry, the nonzero Berry curvature results in a valley Hall effect. In this paper we identify a previously unrecognized consequence of Berry curvature in these materials: an electric field-induced change in the electrons' charge density orientation. We use first principles calculations to show that measurements of the electric field-induced change in the charge density or local density of states in MoS2 can be used to measure its energy-dependent valley and orbital Hall conductivity.

Entities:  

Year:  2020        PMID: 34131610      PMCID: PMC8201411          DOI: 10.1103/physrevb.102.161103

Source DB:  PubMed          Journal:  Phys Rev B            Impact factor:   4.036


  14 in total

1.  Control of valley polarization in monolayer MoS2 by optical helicity.

Authors:  Kin Fai Mak; Keliang He; Jie Shan; Tony F Heinz
Journal:  Nat Nanotechnol       Date:  2012-06-17       Impact factor: 39.213

2.  Electrical control of the valley Hall effect in bilayer MoS2 transistors.

Authors:  Jieun Lee; Kin Fai Mak; Jie Shan
Journal:  Nat Nanotechnol       Date:  2016-01-25       Impact factor: 39.213

3.  Orbitronics: the intrinsic orbital current in p-doped silicon.

Authors:  B Andrei Bernevig; Taylor L Hughes; Shou-Cheng Zhang
Journal:  Phys Rev Lett       Date:  2005-08-01       Impact factor: 9.161

4.  Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides.

Authors:  Di Xiao; Gui-Bin Liu; Wanxiang Feng; Xiaodong Xu; Wang Yao
Journal:  Phys Rev Lett       Date:  2012-05-07       Impact factor: 9.161

5.  Breakdown of high-performance monolayer MoS2 transistors.

Authors:  Dominik Lembke; Andras Kis
Journal:  ACS Nano       Date:  2012-10-05       Impact factor: 15.881

6.  Intrinsic Spin and Orbital Hall Effects from Orbital Texture.

Authors:  Dongwook Go; Daegeun Jo; Changyoung Kim; Hyun-Woo Lee
Journal:  Phys Rev Lett       Date:  2018-08-24       Impact factor: 9.161

7.  Valleytronics. The valley Hall effect in MoS₂ transistors.

Authors:  K F Mak; K L McGill; J Park; P L McEuen
Journal:  Science       Date:  2014-06-27       Impact factor: 47.728

8.  Atomically thin MoS₂: a new direct-gap semiconductor.

Authors:  Kin Fai Mak; Changgu Lee; James Hone; Jie Shan; Tony F Heinz
Journal:  Phys Rev Lett       Date:  2010-09-24       Impact factor: 9.161

9.  Real-space charge-density imaging with sub-ångström resolution by four-dimensional electron microscopy.

Authors:  Wenpei Gao; Christopher Addiego; Hui Wang; Xingxu Yan; Yusheng Hou; Dianxiang Ji; Colin Heikes; Yi Zhang; Linze Li; Huaixun Huyan; Thomas Blum; Toshihiro Aoki; Yuefeng Nie; Darrell G Schlom; Ruqian Wu; Xiaoqing Pan
Journal:  Nature       Date:  2019-10-14       Impact factor: 49.962

10.  Direct observation of valley-coupled topological current in MoS2.

Authors:  Terry Y T Hung; Kerem Y Camsari; Shengjiao Zhang; Pramey Upadhyaya; Zhihong Chen
Journal:  Sci Adv       Date:  2019-04-19       Impact factor: 14.136

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