| Literature DB >> 33473106 |
Long Hu1,2,3, Qian Zhao4,5, Shujuan Huang3, Jianghui Zheng6,7, Xinwei Guan1, Robert Patterson6, Jiyun Kim1, Lei Shi6, Chun-Ho Lin1, Qi Lei1, Dewei Chu1, Wan Tao1, Soshan Cheong8, Richard D Tilley8, Anita W Y Ho-Baillie6,7, Joseph M Luther5, Jianyu Yuan9, Tom Wu1.
Abstract
All-inorganic CsPbI3 perovskite quantum dots have received substantial research interest for photovoltaic applications because of higher efficiency compared to solar cells using other quantum dots materials and the various exciting properties that perovskites have to offer. These quantum dot devices also exhibit good mechanical stability amongst various thin-film photovoltaic technologies. We demonstrate higher mechanical endurance of quantum dot films compared to bulk thin film and highlight the importance of further research on high-performance and flexible optoelectronic devices using nanoscale grains as an advantage. Specifically, we develop a hybrid interfacial architecture consisting of CsPbI3 quantum dot/PCBM heterojunction, enabling an energy cascade for efficient charge transfer and mechanical adhesion. The champion CsPbI3 quantum dot solar cell has an efficiency of 15.1% (stabilized power output of 14.61%), which is among the highest report to date. Building on this strategy, we further demonstrate a highest efficiency of 12.3% in flexible quantum dot photovoltaics.Entities:
Year: 2021 PMID: 33473106 PMCID: PMC7817685 DOI: 10.1038/s41467-020-20749-1
Source DB: PubMed Journal: Nat Commun ISSN: 2041-1723 Impact factor: 14.919