Understanding the nature of the barrier height in a two-dimensional semiconductor/metal interface is an important step for embedding layered materials in future electronic devices. We present direct measurement of the Schottky barrier height and its lowering in the transition metal dichalcogenide (TMD)/metal interface of a field effect transistor. It is found that the barrier height at the gold/ single-layer molybdenum disulfide (MoS2) interfaces decreases with increasing drain voltage, and this lowering reaches 0.5-1 V We also show that increase of the gate voltage induces additional barrier lowering.
Understanding the nature of the barrier height in a two-dimensional semiconductor/n class="Chemical">metal interface is an important step for embedding layered materials in future electronic devices. We presenpan>t direct measuremenpan>t of the Schottky barrier height and its lowering in the transition n class="Chemical">metal dichalcogenide (TMD)/metal interface of a field effect transistor. It is found that the barrier height at the gold/ single-layer molybdenum disulfide (MoS2) interfaces decreases with increasing drain voltage, and this lowering reaches 0.5-1 V We also show that increase of the gate voltage induces additional barrier lowering.
Authors: L Britnell; R V Gorbachev; R Jalil; B D Belle; F Schedin; A Mishchenko; T Georgiou; M I Katsnelson; L Eaves; S V Morozov; N M R Peres; J Leist; A K Geim; K S Novoselov; L A Ponomarenko Journal: Science Date: 2012-02-02 Impact factor: 47.728
Authors: Gianluca Fiori; Francesco Bonaccorso; Giuseppe Iannaccone; Tomás Palacios; Daniel Neumaier; Alan Seabaugh; Sanjay K Banerjee; Luigi Colombo Journal: Nat Nanotechnol Date: 2014-10 Impact factor: 39.213