Chaoqi Dai1,2, Changhe Huo2, Shaocheng Qi2, Mingzhi Dai2,3, Thomas Webster4, Han Xiao1. 1. College of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, People's Republic of China. 2. Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China. 3. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China. 4. Department of Chemical Engineering, Northeastern University, MA, Boston 02115, USA.
Abstract
BACKGROUND: Artificial synaptic behaviors are necessary to investigate and implement since they are considered to be a new computing mechanism for the analysis of complex brain information. However, flexible and transparent artificial synapse devices based on thin-film transistors (TFTs) still need further research. PURPOSE: To study the application of flexible and transparent thin-film transistors with nanometer thickness on artificial synapses. MATERIALS AND METHODS: Here, we report the design and fabrication of flexible and transparent artificial synapse devices based on TFTs with polyethylene terephthalate (PET) as the flexible substrate, indium tin oxide (ITO) as the gate and a polyvinyl alcohol (PVA) grid insulating layer as the gate insulation layer at room temperature. RESULTS: The charge and discharge of the carriers in the flexible and transparent thin-film transistors with nanometer thickness can be used for artificial synaptic behavior. CONCLUSION: In summary, flexible and transparent thin-film transistors with nanometer thickness can be used as pressure and temperature sensors. Besides, inherent charge transfer characteristics of indium gallium zinc oxide semiconductors have been employed to study the biological synapse-like behaviors, including synaptic plasticity, excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), and long-term memory (LTM). More precisely, the spike rate plasticity (SRDP), one representative synaptic plasticity, has been demonstrated. Such TFTs are interesting for building future neuromorphic systems and provide a possibility to act as fundamental blocks for neuromorphic system applications.
BACKGROUND: Artificial synaptic behaviors are necessary to investigate and implement since they are considered to be a new computing mechanism for the analysis of complex brain information. However, flexible and transparent artificial synapse devices based on thin-film transistors (TFTs) still need further research. PURPOSE: To study the application of flexible and transparent thin-film transistors with nanometer thickness on artificial synapses. MATERIALS AND METHODS: Here, we report the design and fabrication of flexible and transparent artificial synapse devices based on TFTs with polyethylene terephthalate (PET) as the flexible substrate, indium tin oxide (ITO) as the gate and a polyvinyl alcohol (PVA) grid insulating layer as the gate insulation layer at room temperature. RESULTS: The charge and discharge of the carriers in the flexible and transparent thin-film transistors with nanometer thickness can be used for artificial synaptic behavior. CONCLUSION: In summary, flexible and transparent thin-film transistors with nanometer thickness can be used as pressure and temperature sensors. Besides, inherent charge transfer characteristics of indium gallium zinc oxide semiconductors have been employed to study the biological synapse-like behaviors, including synaptic plasticity, excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), and long-term memory (LTM). More precisely, the spike rate plasticity (SRDP), one representative synaptic plasticity, has been demonstrated. Such TFTs are interesting for building future neuromorphic systems and provide a possibility to act as fundamental blocks for neuromorphic system applications.