| Literature DB >> 25144762 |
Ye Zhou1, Su-Ting Han1, Xian Chen1, Feng Wang2, Yong-Bing Tang3, V A L Roy4.
Abstract
Conventional flash memory devices are voltage driven and found to be unsafe for confidential data storage. To ensure the security of the stored data, there is a strong demand for developing novel nonvolatile memory technology for data encryption. Here we show a photonic flash memory device, based on upconversion nanocrystals, which is light driven with a particular narrow width of wavelength in addition to voltage bias. With the help of near-infrared light, we successfully manipulate the multilevel data storage of the flash memory device. These upconverted photonic flash memory devices exhibit high ON/OFF ratio, long retention time and excellent rewritable characteristics.Entities:
Year: 2014 PMID: 25144762 DOI: 10.1038/ncomms5720
Source DB: PubMed Journal: Nat Commun ISSN: 2041-1723 Impact factor: 14.919