| Literature DB >> 32821846 |
Yu Lei1,2,3,4, Derrick Butler3,4,5, Michael C Lucking6, Fu Zhang2,3,4,7, Tunan Xia8, Kazunori Fujisawa1,2,3, Tomotaroh Granzier-Nakajima1,2, Rodolfo Cruz-Silva9, Morinobu Endo9, Humberto Terrones6, Mauricio Terrones1,2,3,4,7,9,10, Aida Ebrahimi2,3,4,5,7,11.
Abstract
Two-dimensional transition metal dichalcogenides (TMDs) emerged as a promising platform to construct sensitive biosensors. We report an ultrasensitive electrochemical dopamine sensor based on manganese-doped MoS2 synthesized via a scalable two-step approach (with Mn ~2.15 atomic %). Selective dopamine detection is achieved with a detection limit of 50 pM in buffer solution, 5 nM in 10% serum, and 50 nM in artificial sweat. Density functional theory calculations and scanning transmission electron microscopy show that two types of Mn defects are dominant: Mn on top of a Mo atom (MntopMo) and Mn substituting a Mo atom (MnMo). At low dopamine concentrations, physisorption on MnMo dominates. At higher concentrations, dopamine chemisorbs on MntopMo, which is consistent with calculations of the dopamine binding energy (2.91 eV for MntopMo versus 0.65 eV for MnMo). Our results demonstrate that metal-doped layered materials, such as TMDs, constitute an emergent platform to construct ultrasensitive and tunable biosensors.Entities:
Year: 2020 PMID: 32821846 PMCID: PMC7413726 DOI: 10.1126/sciadv.abc4250
Source DB: PubMed Journal: Sci Adv ISSN: 2375-2548 Impact factor: 14.136
Fig. 1Materials synthesis and confirmation of the presence of Mn atoms.
(A) Schematic of the two-step synthesis of Mn-MoS2: Step 1: MoS2 electrodeposition on PGS in a three-electrode electrochemical cell. Step 2: Mn doping via solid-vapor deposition. (B) EDS mappings (Mo, Mn, S, and O) of Mn-MoS2, and the inset is the STEM image of the mapping area. Experimental and simulated HAADF intensity profiles corresponding to (C) MnMo and (D) MntopMo. The STEM images and the structures are shown in the insets.
Fig. 2Electrochemical characterization and sensing performance of Mn-MoS2 and MoS2 on PGS.
(A) Schematic of the electrochemical testing setup. (B) The EIS results for each electrode in 50 μM DA in PBS. The Mn-MoS2/PGS shows the lowest charge transfer resistance (4.49 × 104 ohms) followed by MoS2/PGS (7.10 × 104 ohms) and PGS (9.11 × 105 ohms). The inset shows a closer view of the MoS2 and Mn-MoS2 spectra. (C) DPV data of different ρDA in PBS using Mn-MoS2/PGS. (D) Calibration curves I/Imax (%) versus ρDA derived from the DPV data shown in (C). (E) DPV results for different ρDA in PBS containing 50 μM AA and 100 μM UA using Mn-MoS2/PGS. (F) Lifetime measurements using Mn-MoS2/PGS: I/Iday1 (%) versus day.
Fig. 3Detection of DA in biologically complex samples: artificial sweat and 10% serum and a proof-of-concept integrated sensor.
DPV results with DA in biologically complex samples: (A) artificial sweat containing 5 mM glucose and (B) 10% serum in PBS using Pt CE and Ag/AgCl RE. The Mn-MoS2/PGS sensor is able to detect 50 nM DA in artificial sweat with 5 mM glucose and 5 nM DA in 10% serum. (C) DA detection with an all-integrated sensor: a schematic of the all-integrated sensor fabricated on a polyimide (PI) sheet with on-chip WE, CE, and RE (inset: photograph of the fabricated sensor. Photo credit: D. Butler, Pennsylvania State University.) and the corresponding DPV results. The integrated sensor enables the detection of 500 nM DA in PBS.
A comparison of this work with recently reported electrochemical DA sensors.
Amp., chronoamperometry; CB, carbon black; CV, cyclic voltammetry; DPV, differential pulse voltammetry; HMS, hollow microspheres; ITO, indium tin oxide; LoD, limit of detection; LSG, laser-scribed graphene; NPs, nanoparticles; PABSA, poly(m-aminobenzenesulfonic acid); PBS, phosphate-buffered saline; PEDOT, poly(3,4-ethylenedioxythiophene); PET, polyethylene terephthalate; rGO, reduced graphene oxide; Ty, tyrosinase.
| Cu2O HMS/CB | Amp. | PBS (pH 5.7) | 3.96 × 10−2 | 9.9 × 10−2 to 7.08 × 102 | ( |
| WO3 NPs/GCE | DPV | PBS (pH 7) | 2.4 × 10−2 | 10−1 to 5 × 101, 5 × 101 to 6 × 102 | ( |
| PET/ITO/NiO NPs/Ty | CV | PBS (pH 6.5) | 1.04 | 2 to 1 × 102 | ( |
| Graphene/diamond | DPV | PBS (0.1 M) | 2 × 10−1 | 5 × 103 to 2 × 103 | ( |
| LSG/PEDOT | DPV | PBS (pH 7.4) | 3.3 × 10−1 | 1 × 102 to 1.5 × 102 | ( |
| AuNPs@MoS2 | DPV | PBS (pH 7) | 5 × 10−2 | 5 × 10−2 to 3 × 101 | ( |
| PABSA-rMoS2 | DPV | PBS (pH 7) | 2.2 × 10−1 | 1 × 101 to 5 × 101 | ( |
| MoS2/rGO/AuNPs | DPV | PBS (pH 7) | 1.1 × 10−1 | 3 × 10−1 to 1.983 × 102 | ( |
| Mn-MoS2/PGS | DPV | PBS (pH 7.2) | 5 × 10−5 | 5 × 10−5 to 5 × 101 | This work |
| Mn-MoS2/PGS | DPV | Artificial sweat | 5 × 10−2 | 5 × 10−2 to 5 × 102 | |
| Mn-MoS2/PGS | DPV | 10% serum | 5 × 10−3 | 5 × 10−3 to 5 × 102 | |
Fig. 4Density functional calculations.
(A) Formation energy of the Mn defects per Mn atom is shown for various defect configurations considered in this work. The substitutional defect MnMo is the lowest energy defect for most of the allowed chemical potential region. The least stable is the MnS defect in which Mn atoms are substitutionally doped at the S sites. MnSi represents the defects of two Mn atoms in the Mo site. (B) Top and side views of DA interacting with MntopMo (neutral defect) forming a chemical bond and DA adsorbed (physisorbed) on MnMo+1. (C) Density of states (DOS) projected onto the DA molecule (in red) and the MoS2 defective layer (in blue): The MntopMo defect introduces impurity states in the bandgap, and the electrons close to the conduction band minimum will be available to generate a current in the device. Because MnMo+1 is nonmagnetic, the spin up/down components are not shown separately. Here, states from the DA molecule sit in the middle of the gap slightly below the unoccupied MnMo defect states; thus, holes from MoS2 can be preferentially transferred to these states, oxidizing the DA molecule.