| Literature DB >> 32637079 |
Wenjuan Zhu1, Wenbo Ma1, Yirong Su1, Zeng Chen2, Xinya Chen1, Yaoguang Ma1, Lizhong Bai1, Wenge Xiao1, Tianyu Liu1, Haiming Zhu2, Xiaofeng Liu1, Huafeng Liu1, Xu Liu1, Yang Michael Yang1.
Abstract
X-rays are widely used in probing inside information nondestructively, enabling broad applications in the medical radiography and electronic industries. X-ray imaging based on emerging lead halide perovskite scintillators has received extensive attention recently. However, the strong self-absorption, relatively low light yield and lead toxicity of these perovskites restrict their practical applications. Here, we report a series of nontoxic double-perovskite scintillators of Cs2Ag0.6Na0.4In1-yBiyCl6. By controlling the content of the heavy atom Bi3+, the X-ray absorption coefficient, radiative emission efficiency, light yield and light decay were manipulated to maximise the scintillator performance. A light yield of up to 39,000 ± 7000 photons/MeV for Cs2Ag0.6Na0.4In0.85Bi0.15Cl6 was obtained, which is much higher than that for the previously reported lead halide perovskite colloidal CsPbBr3 (21,000 photons/MeV). The large Stokes shift between the radioluminescence (RL) and absorption spectra benefiting from self-trapped excitons (STEs) led to a negligible self-absorption effect. Given the high light output and fast light decay of this scintillator, static X-ray imaging was attained under an extremely low dose of ∼1 μGyair, and dynamic X-ray imaging of finger bending without a ghosting effect was demonstrated under a low-dose rate of 47.2 μGyair s-1. After thermal treatment at 85 °C for 50 h followed by X-ray irradiation for 50 h in ambient air, the scintillator performance in terms of the RL intensity and X-ray image quality remained almost unchanged. Our results shed light on exploring highly competitive scintillators beyond the scope of lead halide perovskites, not only for avoiding toxicity but also for better performance.Entities:
Keywords: Lasers, LEDs and light sources; Optical materials and structures
Year: 2020 PMID: 32637079 PMCID: PMC7327019 DOI: 10.1038/s41377-020-00353-0
Source DB: PubMed Journal: Light Sci Appl ISSN: 2047-7538 Impact factor: 17.782
Fig. 1Crystal structure and photoluminescence (PL) characterisation of Cs2Ag0.6Na0.4In1-yBiyCl6.
a Crystal structure of the double perovskite. b Photographs of Cs2Ag0.6Na0.4In0.85Bi0.15Cl6 single crystals under daylight and UV light excitation. c XRD patterns (left) and selected diffraction peaks near 34° (right) of Cs2Ag0.6Na0.4In1-yBiyCl6 with different Bi3+ contents. d Photoluminescence excitation (PLE) spectra and e PL spectra of Cs2Ag0.6Na0.4In1-yBiyCl6 powder with different Bi3+ contents. f Photoluminescence quantum yield (PLQY) of Cs2Ag0.6Na0.4In1-yBiyCl6 powder with various Bi3+ contents
Fig. 2Radioluminescence (RL) characterisation of Cs2Ag0.6Na0.4In1-yBiyCl6 scintillators.
a Proposed mechanism of X-ray scintillation in a lead-free halide double-perovskite scintillator. b Schematic of RL spectra measurement using an integrating sphere and a spectrometer with a fixed X-ray source-to-sample distance. c Photographs of Cs2Ag0.6Na0.4In0.85Bi0.15Cl6 single crystals and powder under X-ray illumination (dose rate: 189 μGyair s−1, voltage: 50 kV). d RL spectra of Cs2Ag0.6Na0.4In1-yBiyCl6 powder with different Bi3+ contents under X-ray excitation with a dose rate of 189 μGyair s−1 at a voltage of 50 kV. e Stokes shift of Cs2Ag0.6Na0.4In1-yBiyCl6 with different Bi3+ contents. f RL spectra of Cs2Ag0.6Na0.4In0.85Bi0.15Cl6, LuAG:Ce and CsI:Tl wafers (dose rate: 189 μGyair s−1, voltage: 50 kV). g Attenuation efficiency and light yield of Cs2Ag0.6Na0.4In1-yBiyCl6 versus Bi3+ content. h Afterglow curves of Cs2Ag0.6Na0.4In0.85Bi0.15Cl6 and CsI:Tl
Fig. 3X-ray imaging based on Cs2Ag0.6Na0.4In0.85Bi0.15Cl6 scintillator wafers with different thicknesses.
a Schematic of the X-ray imaging system. b Photograph of the standard X-ray test-pattern plate. c X-ray images of the test-pattern plate based on Cs2Ag0.6Na0.4In0.85Bi0.15Cl6 wafers with different thicknesses (dose rate: 189 μGyair s−1, voltage: 50 kV). d Corresponding MTF curves of Cs2Ag0.6Na0.4In0.85Bi0.15Cl6 wafers with different thicknesses. e Integrated RL intensity of Cs2Ag0.6Na0.4In0.85Bi0.15Cl6 under thermal treatment for 50 h at 85 °C followed by X-ray illumination for another 50 h (dose rate: 12 μGyair s−1, voltage: 50 kV). The moisture level was also recorded, and the RL was measured with an integrating sphere. The inset shows X-ray images of a circuit board acquired at three different stages (0 h, 50 h and 100 h) with a dose rate of 189 μGyair s−1 at a voltage of 50 kV
Fig. 4Real-time and low-dose X-ray imaging with Cs2Ag0.6Na0.4In0.85Bi0.15Cl6 scintillator wafers.
a Photographs of a Cs2Ag0.6Na0.4In0.85Bi0.15Cl6 wafer under daylight and X-ray illumination (dose rate: 47.2 μGyair s−1, voltage: 50 kV). b SEM images of the wafer surface. c Photograph of a circuit board (top) and its X-ray image (below) (dose rate: 47.2 μGyair s−1, voltage: 50 kV). d RL intensity of Cs2Ag0.6Na0.4In0.85Bi0.15Cl6 measured at low-dose rates. The detection limit is derived from the fitting curve as the value when the SNR equals 3 (voltage: 50 kV). e X-ray images of the test-pattern plate acquired under different X-ray doses (voltage: 50 kV). f Real-time X-ray images of finger bending (dose rate: 47.2 μGyair s−1, voltage: 50 kV)