| Literature DB >> 32527995 |
Qikai Guo1, Saeedeh Farokhipoor2, César Magén3,4, Francisco Rivadulla5, Beatriz Noheda6,7.
Abstract
We report a detailed analysis of the electrical resistivity exponent of thin films of NdNiO3 as a function of epitaxial strain. Thin films under low strain conditions show a linear dependence of the resistivity versus temperature, consistent with a classical Fermi gas ruled by electron-phonon interactions. In addition, the apparent temperature exponent, n, can be tuned with the epitaxial strain between n = 1 and n = 3. We discuss the critical role played by quenched random disorder in the value of n. Our work shows that the assignment of Fermi/Non-Fermi liquid behaviour based on experimentally obtained resistivity exponents requires an in-depth analysis of the degree of disorder in the material.Entities:
Year: 2020 PMID: 32527995 PMCID: PMC7289814 DOI: 10.1038/s41467-020-16740-5
Source DB: PubMed Journal: Nat Commun ISSN: 2041-1723 Impact factor: 14.919