| Literature DB >> 32451502 |
Astrid Weston1,2, Yichao Zou2,3, Vladimir Enaldiev1,2,4, Alex Summerfield1,2, Nicholas Clark2,3, Viktor Zólyomi1,2, Abigail Graham5, Celal Yelgel1,2, Samuel Magorrian1,2, Mingwei Zhou1,2, Johanna Zultak1,2, David Hopkinson2,3, Alexei Barinov6, Thomas H Bointon2, Andrey Kretinin2,3, Neil R Wilson5, Peter H Beton7, Vladimir I Fal'ko8,9,10, Sarah J Haigh11,12, Roman Gorbachev13,14,15.
Abstract
Van der Waals heterostructures form a unique class of layered artificial solids in which physical properties can be manipulated through controlled composition, order and relative rotation of adjacent atomic planes. Here we use atomic-resolution transmission electron microscopy to reveal the lattice reconstruction in twisted bilayers of the transition metal dichalcogenides, MoS2 and WS2. For twisted 3R bilayers, a tessellated pattern of mirror-reflected triangular 3R domains emerges, separated by a network of partial dislocations for twist angles θ < 2°. The electronic properties of these 3R domains, featuring layer-polarized conduction-band states caused by lack of both inversion and mirror symmetry, appear to be qualitatively different from those of 2H transition metal dichalcogenides. For twisted 2H bilayers, stable 2H domains dominate, with nuclei of a second metastable phase. This appears as a kagome-like pattern at θ ≈ 2°, transitioning at θ → 0 to a hexagonal array of screw dislocations separating large-area 2H domains. Tunnelling measurements show that such reconstruction creates strong piezoelectric textures, opening a new avenue for engineering of 2D material properties.Entities:
Year: 2020 PMID: 32451502 DOI: 10.1038/s41565-020-0682-9
Source DB: PubMed Journal: Nat Nanotechnol ISSN: 1748-3387 Impact factor: 39.213