| Literature DB >> 32421338 |
Zhonghui Nie1, Xuanzhao Gao2, Yinjuan Ren3, Siyang Xia1, Yuhan Wang4, Yongliang Shi2, Jin Zhao2, Yue Wang1.
Abstract
Slow hot carrier (HC) cooling resulting from hot phonon bottleneck has been widely demonstrated in metal halide perovskites. Although manipulating HC kinetics in these materials is of both fundamental and technological importance, this task remains a daunting challenge. Here, via interfacial engineering, i.e., epitaxial growth of Cs4PbBr6 on CsPbBr3 nanocrystals (NCs), we have revealed an obvious shortening of HC cooling times, evidenced by transient absorption and ultrafast PL spectra. Collaborated with the longitudinal optical (LO) phonon model, theoretical calculations verify the breaking of the hot phonon bottleneck in CsPbBr3@Cs4PbBr6 and identify the interfacial electron-LO phonon coupling as the leading mechanism for the observed large tuning of HC cooling times. Especially, the participation of LO phonons from Cs4PbBr6 enables the efficient Klemens channel for hot phonon decay. Our findings establish an effective method to tailor HC dynamics in perovskite NCs, which could be conducive to improving the performance of optoelectronic applications.Entities:
Keywords: hot carrier cooling; hot phonon bottleneck; interfacial electron−phonon coupling; perovskite nanocrystals
Year: 2020 PMID: 32421338 DOI: 10.1021/acs.nanolett.0c01452
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189