Literature DB >> 32231270

Memory devices and applications for in-memory computing.

Abu Sebastian1, Manuel Le Gallo2, Riduan Khaddam-Aljameh2, Evangelos Eleftheriou2.   

Abstract

Traditional von Neumann computing systems involve separate processing and memory units. However, data movement is costly in terms of time and energy and this problem is aggravated by the recent explosive growth in highly data-centric applications related to artificial intelligence. This calls for a radical departure from the traditional systems and one such non-von Neumann computational approach is in-memory computing. Hereby certain computational tasks are performed in place in the memory itself by exploiting the physical attributes of the memory devices. Both charge-based and resistance-based memory devices are being explored for in-memory computing. In this Review, we provide a broad overview of the key computational primitives enabled by these memory devices as well as their applications spanning scientific computing, signal processing, optimization, machine learning, deep learning and stochastic computing.

Year:  2020        PMID: 32231270     DOI: 10.1038/s41565-020-0655-z

Source DB:  PubMed          Journal:  Nat Nanotechnol        ISSN: 1748-3387            Impact factor:   39.213


  40 in total

1.  Artificial intelligence accelerated by light.

Authors:  Huaqiang Wu; Qionghai Dai
Journal:  Nature       Date:  2021-01       Impact factor: 49.962

2.  Parallel convolutional processing using an integrated photonic tensor core.

Authors:  J Feldmann; N Youngblood; M Karpov; H Gehring; X Li; M Stappers; M Le Gallo; X Fu; A Lukashchuk; A S Raja; J Liu; C D Wright; A Sebastian; T J Kippenberg; W H P Pernice; H Bhaskaran
Journal:  Nature       Date:  2021-01-06       Impact factor: 49.962

3.  Cluster-type analogue memristor by engineering redox dynamics for high-performance neuromorphic computing.

Authors:  Jaehyun Kang; Taeyoon Kim; Suman Hu; Jaewook Kim; Joon Young Kwak; Jongkil Park; Jong Keuk Park; Inho Kim; Suyoun Lee; Sangbum Kim; YeonJoo Jeong
Journal:  Nat Commun       Date:  2022-07-12       Impact factor: 17.694

4.  Silicon-Based Metastructure Optical Scattering Multiply-Accumulate Computation Chip.

Authors:  Xu Liu; Xudong Zhu; Chunqing Wang; Yifan Cao; Baihang Wang; Hanwen Ou; Yizheng Wu; Qixun Mei; Jialong Zhang; Zhe Cong; Rentao Liu
Journal:  Nanomaterials (Basel)       Date:  2022-06-21       Impact factor: 5.719

5.  Optimised weight programming for analogue memory-based deep neural networks.

Authors:  Charles Mackin; Malte J Rasch; An Chen; Jonathan Timcheck; Robert L Bruce; Ning Li; Pritish Narayanan; Stefano Ambrogio; Manuel Le Gallo; S R Nandakumar; Andrea Fasoli; Jose Luquin; Alexander Friz; Abu Sebastian; Hsinyu Tsai; Geoffrey W Burr
Journal:  Nat Commun       Date:  2022-06-30       Impact factor: 17.694

Review 6.  The rise of intelligent matter.

Authors:  C Kaspar; B J Ravoo; W G van der Wiel; S V Wegner; W H P Pernice
Journal:  Nature       Date:  2021-06-16       Impact factor: 49.962

7.  Electronically Reconfigurable Photonic Switches Incorporating Plasmonic Structures and Phase Change Materials.

Authors:  Nikolaos Farmakidis; Nathan Youngblood; June Sang Lee; Johannes Feldmann; Alessandro Lodi; Xuan Li; Samarth Aggarwal; Wen Zhou; Lapo Bogani; Wolfram Hp Pernice; C David Wright; Harish Bhaskaran
Journal:  Adv Sci (Weinh)       Date:  2022-04-17       Impact factor: 17.521

8.  Experimental validation of state equations and dynamic route maps for phase change memristive devices.

Authors:  Francesco Marrone; Jacopo Secco; Benedikt Kersting; Manuel Le Gallo; Fernando Corinto; Abu Sebastian; Leon O Chua
Journal:  Sci Rep       Date:  2022-04-20       Impact factor: 4.379

9.  Mixed-Precision Deep Learning Based on Computational Memory.

Authors:  S R Nandakumar; Manuel Le Gallo; Christophe Piveteau; Vinay Joshi; Giovanni Mariani; Irem Boybat; Geethan Karunaratne; Riduan Khaddam-Aljameh; Urs Egger; Anastasios Petropoulos; Theodore Antonakopoulos; Bipin Rajendran; Abu Sebastian; Evangelos Eleftheriou
Journal:  Front Neurosci       Date:  2020-05-12       Impact factor: 4.677

10.  Reversible Barrier Switching of ZnO/RuO2 Schottky Diodes.

Authors:  Philipp Wendel; Dominik Dietz; Jonas Deuermeier; Andreas Klein
Journal:  Materials (Basel)       Date:  2021-05-20       Impact factor: 3.623

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