| Literature DB >> 31827162 |
Nadi Braidy1,2, Ryan Gosselin3,4.
Abstract
Analytical electron microscopy plays a key role in the development of novel nanomaterials. Electron energy-loss spectroscopy (EELS) and energy-dispersive X-ray spectroscopy (EDX) datasets are typically processed to isolate the background-subtracted elemental signal. Multivariate tools have emerged as powerful methods to blindly map the components, which addresses some of the shortcomings of the traditional methods. Here, we demonstrate the superior performance of a new multivariate optimization method using a challenging EELS and EDX dataset. The dataset was recorded from a spectrum image P-type metal-oxide-semiconductor stack with 7 components exhibiting heavy spectral overlap and a low signal-to-noise ratio. Compared to peak integration, independent component analysis, Baysian Linear Unmixing and Non-negative matrix factorization, the method proposed was the only one to identify the EELS spectra of all 7 components with the corresponding abundance profiles. Using the abundance of each component, it was possible to retrieve the EDX spectra of all the components, which were otherwise impossible to isolate, regardless of the method used. We expect that this robust method will bring a significant improvement for the chemical analysis of nanomaterials, especially for weak signals, dose-sensitive specimen or signals suffering heavy spectral overlap.Entities:
Year: 2019 PMID: 31827162 PMCID: PMC6906416 DOI: 10.1038/s41598-019-55219-2
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1(a) High angle annular dark field image of the Ivy bridge. Arrow indicates EELS-EDX linescan trace. (b) Logarithm of the STEM intensity profile across linescan. Colored text above the figure correspond to the color code of the phases in Figs. 4 and 5.
Figure 4Retrieved abundance profile (a) and corresponding EELS spectral endmembers. (b) EELS spectra are shown with confidence envelope calculated using a procedure described in the SI (S3). Spectra were scaled and offset for clarity. The logarithm of the STEM-ADF intensity is plotted on top of the image with corresponding shaded areas (Fig. 1) are drawn as a guide. Arrows on abundance map indicate the presence of thin TiN gate layers.
Figure 5Calculated EDX endmembers using the retrieved EELS dataset. Spectra were scaled and offset for clarity.
Figure 2EELS (a) and EDX (b) representation of the spectrum image dataset and corresponding sum spectra.
Figure 3(a) Algorithm of the multivariate curve resolution loglikelihood maximization (MCR-LLM) and the multiple linear regression (MLR). Overall strategies for determining the abundance (A) and the spectral endmembers (S): (b) parallel and (c) sequential computation.