| Literature DB >> 31808338 |
Yuhang Yin1, Zhe Zhou1, Xiaojing Wang1, Huiwu Mao1, Chaoyi Ban1, Yuanbo Chen1, Juqing Liu1, Zhengdong Liu1, Wei Huang1,2.
Abstract
We report the design and preparation of hierarchical hollow-pore nanostructure bilayer conjugated polymer films for high-performance resistive memory devices. By taking the merits of chemical and structural stabilities of a two-dimensional conjugated microporous polymer (2D CMP), a poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) film with a hollow surface was spin-coated onto 2D CMP nanofilm directly, constructing a bilayer heterojunction. A two-terminal diode with a configuration of indium tin oxide/2D CMP/hollow MEH-PPV/Al was fabricated by employing the prepared bilayer heterojunction. The device poses flash feature with a high on/off ratio (>105) and a long retention time (>3.0 × 104 s), which is higher than that of most of the reported conjugated polymers memories. Our work offers a general guideline to construct high on/off ratio polymer memories via hierarchical nanostructure engineering in memristive layer.Entities:
Keywords: bilayer heterojunction; conjugated polymer; flash memory; hierarchical hollow-pore nanostructure; on/off ratio
Year: 2019 PMID: 31808338 DOI: 10.1021/acsami.9b16778
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN: 1944-8244 Impact factor: 9.229