| Literature DB >> 31636269 |
D O Ignatyeva1,2, C S Davies3,4, D A Sylgacheva5,6, A Tsukamoto7, H Yoshikawa7, P O Kapralov6, A Kirilyuk8, V I Belotelov5,6, A V Kimel9.
Abstract
All-optical magnetization reversal with femtosecond laser pulses facilitates the fastest and least dissipative magnetic recording, but writing magnetic bits with spatial resolution better than the wavelength of light has so far been seen as a major challenge. Here, we demonstrate that a single femtosecond laser pulse of wavelength 800 nm can be used to toggle the magnetization exclusively within one of two 10-nm thick magnetic nanolayers, separated by just 80 nm, without affecting the other one. The choice of the addressed layer is enabled by the excitation of a plasmon-polariton at a targeted interface of the nanostructure, and realized merely by rotating the polarization-axis of the linearly-polarized ultrashort optical pulse by 90°. Our results unveil a robust tool that can be deployed to reliably switch magnetization in targeted nanolayers of heterostructures, and paves the way to increasing the storage density of opto-magnetic recording by a factor of at least 2.Entities:
Year: 2019 PMID: 31636269 PMCID: PMC6803660 DOI: 10.1038/s41467-019-12699-0
Source DB: PubMed Journal: Nat Commun ISSN: 2041-1723 Impact factor: 14.919
Fig. 1The scheme of polarization-based layer-resolved all-optical toggling of magnetization. a Physical scheme and sample design. The p-polarized/s-polarized optical pulse (and the associated targeted layer for magnetization reversal) is shown by red/blue. b, c The distribution of |e|2 (dashed-dotted line) and the partial δA and total A absorption (solid line) inside the multi-layered heterostructure for p-polarized and s-polarized optical pulses respectively, with fixed wavelength 800 nm and angle of incidence 59°. d Calculated angular dependence of the absorbed optical energy by the top (dashed line)/bottom (dotted line) layer with incident p-polarized (red)/s-polarized (blue) light. e Calculated (thin solid lines) and experimentally measured (thick solid lines) reflectance angular spectra for incident p-polarized (red)/s-polarized (blue) light. Also shown is the calculated strength of |e|2 at the bottom surface of the bottom Gd27(FeCo)73 layer with incident p-polarized (red dashed-dotted line)/s-polarized (blue dashed-dotted line) light. In panels d-e, the green background colour indicates the predicted region where the absorption of p-polarized light in the bottom Gd27(FeCo)73 layers is greater than in the top Gd26(FeCo)74 layer. This is the region with expected polarization-controlled layer selective switching of magnetization. The black and grey arrows indicate the angles where the polarization-based all-optical switching experimentally succeeded and failed respectively
Fig. 2Characteristic hysteresis loop of the multi-layered heterostructure obtained with the help of magneto-optical microscopy. The magneto-optical signal I is proportional to the out-of-plane component of the magnetization of the iron sublattice in the entire heterostructure. a Characteristic hysteresis loop of the entire heterostructure, constructed by averaging the pixel intensities of magneto-optical images recorded at varying strengths of the out-of-plane bias magnetic field HB. b Typical raw magneto-optical images, measured with HB = 0, and the inset value corresponds to the average pixel intensity of the associated image. The four shaded levels of the hysteresis loop correspond to the four stable magnetic states that can be obtained, with the left (right) arrow indicating the orientation of the magnetization of gadolinium within the top (bottom) layer of GdFeCo
Fig. 3Polarization-dependent all-optical switching of magnetization in different layers of the heterostructure. Background-corrected magneto-optical images are shown, taken after exposing the heterostructure to a single p-polarized (left spot) and s-polarized (right spot) optical pulse, incident at an angle of 59°. Also shown is a cross-section (averaged over a width of 1.8 µm) extracted from the image. The left (right) arrow indicates the orientation of the magnetization of Gd within the top (bottom) layer of GdFeCo. The results shown in a and b were obtained with an incident fluence of ∼10 mJ/cm2 and ∼12 mJ/cm2 respectively