| Literature DB >> 31625718 |
Weiteng Guo1, Bin Chen1, Van Lam Do1, Gert H Ten Brink1, Bart J Kooi1, Vitaly B Svetovoy1,2, George Palasantzas1.
Abstract
We present here a detailed study of the wettability of surfaces nanostructured with amorphous and crystalline nanoparticles (NPs) derived from the phase-change material Ge2Sb2Te5 (GST). Particular attention was devoted to the effect of airborne surface hydrocarbons on surface wetting. Our analysis illustrates that a reversible hydrophilic-hydrophobic wettability switch is revealed by combined ultraviolet-ozone (UV-O3) treatments and exposure to hydrocarbon atmospheres. Indeed, the as-prepared surfaces exhibited a hydrophilic state after thermal annealing or UV-O3 treatment which can partially remove hydrocarbon contaminants, while a hydrophobic state was realized after exposure to hydrocarbon atmosphere. Using high-angle annular dark-field scanning transmission electron microscopy for the specially designed GST NP decorated graphene substrates, a network of hydrocarbon connecting GST NPs was observed. Our findings indicate that airborne hydrocarbons can significantly enhance the hydrophobicity of nanostructured surfaces. Finally, the experiments reveal that previously defined hydrophilic materials can be used for the design of hydrophobic surfaces even if the meniscus is highly adhered to a solid surface, which is in agreement with our qualitative model involving the contribution of the nanomeniscus formed between the substrate and a decorating NP.Entities:
Keywords: Ge2Sb2Te5; airborne hydrocarbons; nanomeniscus; nanoparticle; transmission electron microscopy; wettability switch; wetting
Year: 2019 PMID: 31625718 PMCID: PMC6887839 DOI: 10.1021/acsnano.9b06909
Source DB: PubMed Journal: ACS Nano ISSN: 1936-0851 Impact factor: 15.881
Figure 1Schematics of the two models that describe the relationship between wettability and roughness. (a) Wenzel model, and (b) Cassie–Baxter model.
Figure 2Wettability measurements on relatively flat surfaces of the substrate materials used for decoration with GST NPs. (a) Evolution of SCA of the bare Cu substrate surface. (b) Evolution of SCA on amorphous and crystalline deposited GST thin films.
θU and θH of the flat surfaces made of Cu, amorphous GST, and crystalline GSTa
| materials | θU (deg) | θH (deg) |
|---|---|---|
| substrate Cu | 34 | 79 |
| amorphous GST | 0 | 48.5 |
| crystalline GST | 0 | 31 |
θU: Contact angle of the flat surface with the relevant material measured immediately after UV-O3 treatment. θH: Contact angle of the flat surface with the relevant material measured after long-time exposure in air.
Figure 3Experimental data of GST NPs on Cu substrates. (a) TEM image of amorphous GST NPs deposited on a TEM grid simultaneously with the NPs deposited on the Cu substrate. (b) Evolution of the SCA of the as-deposited amorphous GST NPs on a Cu substrate with subsequent thermal annealing at 180 °C. (c) TEM image of as-deposited crystalline GST NPs on a TEM grid. (d) Evolution of the SCA for the as-deposited crystalline NPs on a Cu substrate after several UV-O3 treatments and subsequent exposures to air.
Figure 4Characterization of amorphous GST NP decorated samples. (a) Variation of SCA of two amorphous GST NP decorated Cu samples after UV-O3 treatments. (b) SCA of the amorphous GST NP decorated Cu sample after UV-O3 treatment. (c) SCA of the amorphous GST NP decorated Cu sample after being kept in ambient air. (d) Receding contact angle of an amorphous GST NP decorated Cu sample after being kept in ambient air. (e) TEM image of NPs deposited on a TEM grid simultaneously with the NPs that decorated the Cu samples. The coverage of the amorphous was 72%, and the diameter of the NPs was 9.8 ± 0.5 nm.
Figure 5TEM measurements of a GST NPs/graphene sample. (a) BF TEM image of the GST NPs/graphene sample. (b) HAADF-STEM image of the graphene sample with the fast Fourier transform image at the top right corner. (c) HAADF-STEM image of the sample. (d) BF STEM image of the sample taken from the same area of (c). (e) HAADF-STEM image of another area of the same sample. (f–h) EDX mapping of the GST elements Ge, Sb, and Te, respectively.
Figure 6(a) The configuration used to calculate contact angle with eq . (b) More realistic geometry of the problem: r1 is the negative radius of curvature, r2 (not shown) is the positive radius of curvature in the orthogonal direction to the plane, h1 is the thickness of wetting film on the substrate, and h2 is the thickness of wetting film on the NPs.