Facile Synthesis of Molybdenum Diselenide Layers for High-Performance Hydrogen Evolution Electrocatalysts.

A cost-effective solution-based synthesis route to grow MoSe2 thin films with vertically aligned atomic layers, thereby maximally exposing the edge sites on the film surface as well as enhancing charge transport to the electrode, is demonstrated for hydrogen evolution reaction. The surface morphologies of thin films are investigated by scanning electron microscopy and atomic force microscopy, and transmission electron microscopy analyses confirm the formation of the vertically aligned layered structure of MoSe2 in those films, with supporting evidences obtained by Raman. Additionally, their optical and compositional properties are investigated by photoluminescence and X-ray photoelectron spectroscopy, and their electrical properties are evaluated using bottom-gate field-effect transistors. The resultant pristine MoSe2 thin film exhibited low overpotential of 88 mV (at 10 mA·cm-2) and a noticeably high exchange current density of 0.845 mA·cm-2 with excellent stability, which is superior to most of other reported MoS2 or MoSe2-based catalysts, even without any other strategies such as doping, phase transformation, and integration with other materials.

Introduction

As the interest in hydrogen (H2) has continuously increased as a future sustainable energy source because of its high energy density without environmental pollution,[1,2] massive efforts have been devoted to develop efficient processes for H2 production. One of the most effective and eco-friendly approaches to produce H2 is hydrogen evolution reaction (HER) from electrochemical water splitting, which utilizes appropriate catalysts.[3,4] Platinum (Pt) and its alloys have been acknowledged as the most active catalyst for this reaction because they can dramatically improve the energy conversion efficiency by significantly dropping the overpotential to drive the reaction;[5,6] however, their scarcity and high cost hinder its large-scale use for H2 production. In recent years, layered transition metal dichalcogenides (TMDCs) such as MoS2 and MoSe2 have received great attention by showing their potentials as efficient electrocatalysts for the HER,[7−41] and their cost-effectiveness, chemical stability, and profusion further support their extension to future earth-abundant noble-metal-free electrocatalysts.

Each charge-neutral layer of TMDCs, which consists of covalently bonded three atomic sheets (e.g., center Mo- and adjacent two S-sheets in MoS2), is stacked together by weak out-of-plane van der Waals interactions to form bulk-state. Therefore, those layered materials have two types of surfaces, which are terrace sites on the basal planes and edge sites on the side surfaces, providing highly anisotropic property including hydrogen adsorption free energy on each surface, ΔGH, for HER. From the theoretical studies, in the TMDCs with the conventional semiconducting 2H phase, the basal plane has been known to be electrochemically inert (ΔGH ≈ 2 eV),[42,43] thus limiting the catalytic activity of bulk-state TMDC materials and having initiated various research efforts to maximally expose the catalytically active edge site by controlling their nanostructures to increase the edge to the basal plane ratio;[7−16,18] however, all those performances are still far behind of Pt-based catalysts. Alternatively, improving the catalytic activity of both basal and edge planes by transforming semiconducting 2H phase to 1T metallic phase (e.g., lithium intercalation) has been acknowledged to improve the HER performance of TMDCs,[16,17,25,31,39] but the process is cost-ineffective as well as time-consuming, and the stability of metastable 1T phase would be an issue to be solved. In addition to increasing the number of active sites, enhancing the charge transport property of the TMDC-based catalyst could be another crucial factor to improve the HER performance, and therefore, approaches such as chemical doping of TMDCs to increase their inherent conductivity[20−22] and constructing hybrid nanostructures with highly conductive platforms[23−39] were demonstrated. However, the overall process could be complicated with the introduction of the additional materials, also inducing an increase in cost, compared to that of pristine TMDSs, and the grown TMDC layers, which were usually parallel to the substrate, had the inherently high resistance through the basal planes connected by van der Waals bond, inducing the limited performances.

In this work, a simple solution-based cost-effective methodology, which can grow MoSe2 layers vertically aligned on substrates regardless of their types, maximizing the exposed active edge sites as well as charge transport property, is realized. MoSe2 has known to have higher intrinsic conductivity with lower conduction band minimum[44] and better hydrogen adsorption coverage[36] than those of MoS2. Consequently, it is proven that the catalytic performances of pristine MoSe2 thin film having vertically aligned atomic layers could be significantly improved to produce outstanding HER catalytic performances with low overpotential of 88 mV at 10 mA·cm–2, an extremely high exchange current density of 0.845 mA·cm–2, and excellent stability, superior to most of the other reported MoS2 or MoSe2-based catalysts, even without additional strategies such as doping, phase transformation, and integration with other materials.

Results and Discussion

Synthesis of MoSe2 Thin Film Having Vertically Aligned Layered Structure

The synthesis of vertically aligned MoSe2 layers was achieved on different substrates (SiO2/Si and Au/Si) using a cost-effective chemical bath deposition (CBD) method.[45] Dissimilar to the traditional solution-based coating methods such as spin-coating, this approach can be utilized for various substrates regardless of the type, shape, and size. As shown in Figure a–c, the substrates were immersed in the precursor solution containing ammonium molybdate ((NH4)6Mo7O24) and selenium dioxide (SeO2), and hydrazine hydrate (N2H4) and ammonia solution (NH3) were involved in the reaction kinetics to form clear bath solution without any precipitation. Additionally, hydrochloric acid (HCl) was utilized to adjust the solution pH. The prepared MoSe2 thin films were post-annealed at 450 °C in a Se environment to improve the crystallinity of the MoSe2 layers. The detailed experimental conditions are described in the Methods section. The overall reaction proceeded as follows (eq ):

Figure 1

Characteristics of MoSe2 thin films. (a–c) Schematic representation of (a) solution preparation, (b) thin film deposition of the CBD process for the vertically aligned layered MoSe2 films, and (c) post-deposition annealing for the enhancement of the crystallinity of MoSe2 thin films in a Se environment using a tubular furnace. (d) Raman spectra (inset: X-ray diffraction patterns). (e) PL with their deconvoluted spectra. (f,g) XPS signals with their deconvoluted spectra for (f) Mo and (g) Se.

In this process, the deposition time played a key role in the growth of MoSe2, and it was changed from 1 to 20 min to adjust the thickness of the MoSe2 thin film. The variation of surface morphology according to the deposition time was investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM), and transmission electron microscopy (TEM) was further utilized to unveil the structural information of the MoSe2 layers within those thin films. SEM images in Figure a–e represent that smooth surface without any agglomerations was firstly formed (e.g., 1 and 5 min samples), and it evolved into uniformly distributed larger-sized spherical grains as the deposition time increased. This surface topology was further confirmed by AFM images (Figure k–o), and the thicknesses of MoSe2 thin films were estimated to be approximately 1.8 (1 min), 8.4 (5 min), 16.5 (10 min), 25.7 (15 min), and 33.8 nm (20 min) (inset of Figure k–o). This morphological evolution suggests that the MoSe2 film formation process follows homogeneous nucleation, producing larger agglomeration with the increase of the film thickness. The layered structure of MoSe2, comprising the thin film, was further investigated by TEM, and densely packed stripes, representing vertically aligned MoSe2 layers, were observed within the spherical grains of thin films as shown in Figure f–j. From the TEM images, we could also confirm that the deposition time shorter than 15 min was not enough to grow the film to be the thickness forming the multiple vertically aligned stripes. Moreover, the less discernible stripes in 20 min sample show that MoSe2 layers grow randomly after the optimum deposition time (15 min), and it is expected that the property of the MoSe2 film would become similar to that of bulk film as its thickness increases. The surface profile image, with their FFT patterns, is shown in Figure S1, and the spacing between the stripes is approximately 6.4–6.5 Å (Table S1), consistent with the interlayer spacing of MoSe2.[8,13,29] Because most part of the thin film was terminated by the catalytically active edge sites of MoSe2 layers (e.g., 15 min sample), we could expect efficient catalytic reactions from those thin films.

Figure 2

Nanomorphologies of MoSe2 thin films. (a–e) SEM images, (f–j) TEM images (inset: high resolution), and (k–o) AFM topographical images (inset: AFM thickness profile spectra) of MoSe2 thin films prepared with different deposition times, such as 1, 5, 10, 15, and 20 min.

Figure d shows the vibrational Raman modes of layered MoSe2 thin films. The Raman profiles exhibited two characteristic phonon modes: one corresponded to the A1g mode (242.01–242.89 cm–1) associated with the out-of-plane vibration of Se atoms and the other corresponded to the E2g1 mode (290.41–292.17 cm–1) associated with the in-plane vibration of Mo and Se atoms.[46−48] Similar to the previous results in the literature,[47,48] A1g and E2g1 peaks exhibited blue and red shift, respectively, as the thickness increased with the deposition time. The wide range of Raman spectra in Figure S2 shows that the out-of-plane vibrational mode A1g peaks are stronger than the characteristic peaks of the Si substrate (530 cm–1), representing that the high-quality MoSe2 layers are obtained using our CBD growth method.[47] Moreover, much higher A1g peak about out-of-plane vibration than E2g1 peak about in-plane vibration further supports our claim for the vertically aligned MoSe2 layer structures,[13] consistent with the TEM results. The Raman mapping results with respect to the intensity of A1g and E2g1 mode peaks, obtained at 1 and 15 min-deposited samples over an area of 10 μm × 10 μm, are shown in Figure S3, which demonstrates uniform growth of MoSe2. Additionally, the B2g1 mode, which came from the broken translation symmetry along the c-axis direction, often found in few-layer samples, appeared at 352 cm–1 (Figure S2).[47,49,50] The crystal structure of MoSe2 was also studied by X-ray diffraction (XRD) patterns as shown in the inset of Figure d, and (002) preferentially oriented peak was exhibited at 2θ = 13.45°, which is in agreement with the earlier report.[49] The (002) orientation lattice d-spacing values are estimated for different thickness MoSe2 films, and they are compared with the TEM results as shown in Table S1.

The photoluminescence (PL) spectra of the MoSe2 thin films obtained at the deposition times from 1 to 20 min are shown in Figure e. All spectra exhibit a broad peak, which can be deconvoluted to two separate peaks, and especially, those peaks in the thinnest film (1 min deposition), at 796 nm (1.56 eV) and 721 nm (1.72 eV), are similar to previous experimental results of A and B excitonic peaks observed in monolayer MoSe2, respectively.[47,51] It has been known that those direct bandgaps of MoSe2 are due to the quantum confinement effect in atomically thin MoSe2 layers,[52] and large energy splitting of 0.1–0.4 eV in direct band transition peaks, originated from strong spin–orbit coupling, has been reported in monolayer TMDCs.[48,53,54] Meanwhile, X-ray photoelectron spectroscopy (XPS) analysis was performed to measure the binding energies of Mo and Se. For the 1 min deposited MoSe2, Mo 3d peaks are observed at 230.9 and 227.7 eV (Figure f), which are ascribed to the doublet of Mo 3d3/2 and Mo 3d5/2, respectively.[55] Furthermore, Se 3d XPS deconvoluted spectra revealed that the Se 3d3/2 and 3d5/2 peaks were at 53.9 and 53.2 eV, respectively (Figure g). The detailed XPS peak positions and their intensities are provided in Table S2. Thicker films also have similar characteristics, and all the observed results are in highly consistent with the earlier reported values for MoSe2.[47] The XPS survey spectra are shown in Figure S4.

Electrical Property of MoSe2 Thin Films

In order to evaluate the electrical properties of the MoSe2 thin films, bottom-gate field-effect transistors (FETs) were fabricated using those thin films grown on SiO2/Si. Optical images of the prepared devices are shown in the insets of Figures a and S5. The field-effect mobility, μFE, was calculated from the slope of ΔIDS/ΔVGS fitted to the linear regime of the transfer curves using the following equation (eq 2):where W is the width of the channel (10 μm), L is the length of the channel (10 μm), Cox is the capacitance per unit area of the gate dielectric (1.15 × 10–8 F·cm–2), VDS is the applied drain voltage (VDS = 1 V), and ΔIDS/ΔVGS is the slope in the linear part of the transfer plot (IDS–VGS) or transconductance (gm). The gm, μFE, and on/off current ratio were approximately 2.82 × 10–9 S, 0.24 cm2·V–1·s–1, and 105, respectively, at VDS = 1 V for the lowest-thickness MoSe2 (1 min-grown) FET (Figure S5a). The values increased to approximately 1.01 × 10–7 S, 8.8 cm2·V–1·s–1, and 105, respectively, at VDS = 1 V for the higher-thickness MoSe2 (15 min-grown) FET (Figure a,b). For the highest-thickness MoSe2 (20 min-grown) FET (Figure S5b), the gm, μFE, and on/off current ratio decreased to approximately 6.86 × 10–9 S, 0.59 cm2·V–1·s–1, and 105, respectively, at VDS = 1 V, and this may be due to the nature of the film becoming the bulk-state. The prepared MoSe2 FETs showed a little lower performance than the chemical vapor deposition-grown MoSe2 nanosheet-based devices because of the vertically aligned layered structure, and their electrical properties are expected to be further improved by applying the suitable processes such as post-annealing and doping.

Figure 3

Electrical properties of 15 min-grown MoSe2 thin film, characterized by FET. (a) Transfer characteristics (IDS vs VGS) of FET at VDS = 1 V (inset: optical image of MoSe2 FET). (b) Output characteristics (IDS vs VDS) of FET at various VGS of 0–80 V (10 V step). The inset shows the IDS–VDS curves at low VDS exhibiting a good linearity.

Application of MoSe2 Thin Films to HER

To validate the electrocatalytic behavior of the vertically aligned MoSe2 for the HER, MoSe2 was grown on an Au (200 nm)/Si substrate. Using the standard three-electrode system, the linear sweep voltammetry (LSV) polarization curves of the samples in a 0.5 M H2SO4 electrolyte solution were recorded with a scan rate of 2 mV·s–1. Figure a shows the LSV curves for the HER activity of the MoSe2 thin films, grown for various deposition times. As a reference, a commercially available Pt electrode was compared. The lowest onset overpotential value at 10 mA·cm–2 (η10mA·cm) is found from the 15 min-grown MoSe2 to be −88 [mV vs reversible hydrogen electrode (RHE)], which is superior to most of the MoS2 and MoSe2-based HER catalysts,[7−41] including those with the dopant,[20−22] phase-transformed TMDCs,[16,17,25,31,39] and nanohybrid with other materials[23−39] (Table ). This value increases with a decrease of deposition time because of insufficient thickness, and the observed onset overpotential values are at −367, −296, and −185 (mV vs RHE) for 1, 5, and 10 min-grown MoSe2 films, respectively. It also increases slightly to −95 (mV vs RHE) for the 20 min-grown sample, and it is believed that the MoSe2 film in this thickness range has more bulk nature, which has the reduced conductivity and the decreased number of active edge site, consequently degrading its electrocatalytic properties. Additionally, the maximum cathodic current density (j) value of 365 mA·cm–2 (at a overpotential of 341 mV) was estimated for 15 min-grown MoSe2, which is superior to that of reference (Pt, 162 mA·cm–2 at a overpotential of 109 mV). The outstanding hydrogen evolution property of 15 min-grown MoSe2 is revealed by the maximum “j” value, which is directly proportional to the amount of evolved hydrogen.[14]

Figure 4

Electrocatalytic performances of MoSe2 thin films. (a) Polarization curves. (b) Corresponding Tafel slopes. (c) Stability test for 20 h (15 min-grown sample). (d) Time course of the catalytic current during an electrolysis experiment (15 min-grown sample) at overpotential −88 mV vs RHE.

Table 1

Comparison of the Catalytic Performances of This Work with the Reported Values

	electrocatalyst	overpotential (mV)@ 10 mA·cm–2	Tafel slope (mV·dec–1)	exchange current density (mA·cm–2)	refs
MoS2 or MoSe2	vertically aligned MoSe2by CBD	88	59.8	0.845	this work
	vertical arrays of stepped MoS2	104	59	0.2	(7)
	network or flowerlike MoSe2	228	92		(8)
	MoS2 treated by O2 plasma or annealed by H2	>600	147–171	0.00038	(9)
	dendritic MoS2	∼225	73	0.0245	(10)
	nanotriangular MoS2	∼200	61	0.0381	(11)
	hierarchical MoSe2–x nanosheets	∼290	98		(12)
	vertically aligned MoSe2	>450	105–120	0.002	(13)
	defect-rich MoS2	∼190	50		(14)
	exfoliated MoS2	∼210	70		(15)
	intercalation of vertically aligned MoSe2 by Li+	168	44	0.00025	(16)
	1T MoS2 exfoliated by Li intercalant	∼200	40		(17)
	double-gyroid MoS2	∼230	50	0.00069	(18)
MoS2 or MoSe2 + doping	Pt-doped MoS2 nanosheets	∼140	96		(20)
	S-doped MoSe2 nanosheets	∼100	60		(21)
	Ni-doped vertically aligned MoSe2 on carbon fiber	250	59.8	0.00038	(22)
MoS2 or MoSe2-based hybrid	MoSe2–RGO (with PVP) nanosheets	∼200	70		(23)
	MoS2–CuSx nanocomposite	100	39		(24)
	hydrazine-treated MoOx–MoS2 core–shell nanowires	>300	50	0.045	(25)
	MoS2(1–x)Se2x particles on NiSe2 form	69	42.1	0.2994	(26)
	NiSe nanocrystallites on MoSe2 nanosheets	210	56		(27)
	MoSe2 nanosheets decorated on carbon Fiber	182	69–76	0.0233	(28)
	MoSe2 nanoflowers on RGO nanosheets	195	67		(29)
	MoS2-coated CoSe2 nanobelts	68	36	0.073	(30)
	Li-treated MoOx–MoS2 core–shell nanowires	∼290	52		(31)
	perpendicularly oriented MoSe2 on SnO2 nanotubes	174	51		(32)
	perpendicularly oriented MoSe2 on graphene nanosheets	159	61		(33)
	MoS2 nanosheets on SnO2 nanotubes	∼220	59		(34)
	amorphous MoSx on dealloyed nanoporous Au	∼220	41		(35)
	MoSe2 nanosheets on RGO	115	69		(36)
	MoS2 nanosheets between RGO sheets	∼170	41		(37)
	MoS1.0Se1.0 alloy	∼200	56	0.32	(38)
	Li-intercalated MoS2 nanoparticles on the carbon fiber	>110	62	0.167	(39)

The Tafel slope values were estimated from the Tafel plots (Figure b). The extracted lowest slope value was approximately 59.8 mV·dec–1 for the 15 min-deposited MoSe2, suggesting excellent kinetic behavior, and the value increased with a decrease in deposition time (107 mV·dec–1 at 10 min, 125 mV·dec–1 at 5 min, and 150 mV·dec–1 at 1 min). Twenty minute-deposited sample also showed a slightly higher value, 87 mV·dec–1, than the 15 min-deposited sample. The Tafel slope is an intrinsic characteristic of the electrocatalyst and calculated by the rate-limiting step of the HER curves.[11] From the hydrogen evolution mechanism, this can be explained by the Volmer reaction, shown in eq , followed by the electrochemical desorption of Hads, known as the Heyrovsky reaction, shown in eq . A recombination step, Tafel reaction, is also engaged in this process, as expressed in eq . The reactions are listed as follows:

The exchange current density (j0), a crucial parameter in the HER performance, was extracted for all the samples from the extrapolation of Tafel plots (Figure b). Particularly, the 15 min-grown MoSe2 exhibits a remarkably high j0 of 0.845 mA·cm–2, which is one of the maximum values among the reported MoS2 and MoSe2-based catalysts,[7−41] as presented in Table . In earlier reports, Cui et al.[13,22] have reported the vertically aligned MoSe2 layers, but their performances were much lower than our results. The superior HER parameters from this work are summarized in Table S3.

To further investigate the interface reactions and electrode kinetics during the catalytic HER process, electrochemical impedance spectroscopy (EIS) was performed. From the Nyquist plots in Figure S6, the charge-transfer resistances (RCT) of the MoSe2 deposited for 20, 15, 10, 5, and 1 min were observed at 4.09, 3.61, 6.91, 8.61, and 13.74 Ω, respectively, and that of the Pt electrode was 20.83 Ω. The 15 and 20 min-grown MoSe2 samples showed much lower RCT values than those deposited for shorter times and Pt reference (the lowest value was shown from 15 min-grown MoSe2), which was due to the more active site for H+ reduction at the electrode–electrolyte interface. In addition, the small series resistances (Rs) of all the MoSe2 samples (3.37 Ω: 20 min, 2.29 Ω: 15 min, 4.51 Ω: 10 min, 4.27 Ω: 5 min, and 3.06 Ω: 1 min), representing efficient electrical contact at the interface of the electrode with minimized parasitic Ohmic losses, are favorable for the practical applications.

Besides the HER activity, the stability is another important criterion to evaluate the electrocatalytic properties. To investigate the durability in an acidic environment, long-term cycling tests were conducted. Figure c shows that the performances of the 15 min deposited sample are not noticeably changed even after 20 h test, indicating its superior electrocatalytic stability for the long-term HER performance. Moreover, the time versus current density curve in Figure d shows the consistent current generation for the stable hydrogen molecule production over 20 h at a constant overpotential of −88 mV (15 min deposited MoSe2).

Conclusions

In this work, vertically aligned MoSe2 layers, maximizing the accessibility to the active edge sites and charge transport property simultaneously, were demonstrated by newly designed low-cost solution-based CBD process. The proposed preparation process is simple, scalable, and inexpensive, and the applicability to various substrates regardless of type and shape could offer a boundless opening to the preparation of layered structures. Even without additional strategies such as doping, phase transformation, and integration with other materials, the resultant pristine MoSe2 films exhibited a low overpotential of 88 mV (at 10 mA·cm–2) and noticeably a high exchange current density of 0.845 mA·cm–2 with excellent stability, superior to most of the reported MoS2 and MoSe2-based electrocatalysts in the references. We believe that the methodology described in this work for superior HER performance with the long-term stability of MoSe2 catalyst guides to the development of efficient practical hydrogen production catalysts.

Methods

Synthesis of Vertically Aligned MoSe2 Layers

The CBD process was utilized to synthesize MoSe2 thin films. The precursor solution bath was prepared by 0.03 M ammonium molybdate ((NH4)6Mo7O24) and 0.005 M selenium dioxide (SeO2). The hydrazine hydrate (N2H4, 1.0 M) and ammonia solution (NH3, 4 M) were added to form a clear bath solution without any precipitation. Hydrochloric acid (HCl) was used to control the solution pH (12 ± 0.1). The deposition time was varied to control the thickness of the MoSe2 films (1, 5, 10, 15, and 20 min). SiO2 (300 nm)/Si and Au (200 nm)/Si were utilized as substrates for FET and HER devices, respectively. The bath temperature was 90 °C. The prepared MoSe2 layers were subjected to post-annealing treatment at 450 °C for 60 min in a Se atmosphere.

Characterization of MoSe2 Films

The Renishaw inVia Raman microscope (model: RE04) was used to characterize MoSe2 films with a scan speed of 30 s. XRD analysis was conducted with a Rigaku D/Max-2500 diffractometer, using a source of Cu Kα radiation. XPS analysis was performed using a PHI 5000 VersaProbe (25 W Al Kα, 6.7 × 10–8 Pa). The room temperature PL analysis was performed using a HORIBA microspectrometer with a spot size of 1 μm by the Nd:YAG laser source (532 nm wavelength). The surface morphology of MoSe2 films was analyzed using field emission-SEM (JEOL JSM-6700F). Topology and film thickness were estimated using AFM (Vecco Dimension 3100). The vertically aligned MoSe2-layered structures were confirmed with a support of a JEOL-2010F high-resolution transmission electron microscope. For TEM sample preparation, PMMA was coated onto the as-deposited MoSe2 sample (on SiO2/Si) and then SiO2 was etched using KOH solution. After etching SiO2, PMMA with MoSe2 was floated on KOH solution, and it was transferred to the TEM Cu grid. The transferred sample was cleaned using acetone to remove poly(methyl methacrylate) (PMMA) for analysis. The FFT and R-FFT images were extracted using the Gatan DigitalMicrograph (version 3.21).

Electrochemical Measurements

LSV measurements were performed in the acidic electrolyte solution of 0.5 M H2SO4 (purged with pure N2) with the scan rate of 2 mV·s–1. The three-electrode system, which comprised a working electrode (MoSe2-deposited Au), a counter electrode (graphite rod), and a reference electrode (saturated calomel electrode), was used for the LSV measurement. Au substrate was utilized to decrease the Ohmic resistance, and it was shown that the catalytic property of Au-only substrate was not noticeable.[11] The EIS measurements were performed with frequencies ranging from 105 to 0.1 Hz. The LSV curves were iR-corrected with the Rs values calculated from the EIS measurement.

Construction of the MoSe2 FET Devices

The proposed CBD process was employed to prepare different thicknesses of MoSe2 films onto SiO2 (300 nm)/Si substrates for the FET device fabrication. The combination of photolithography and reactive ion SF6/O2 plasma etching was used to make the device structure and contact points. Ti/Au (10/50 nm) was deposited on MoSe2 films onto SiO2 (300 nm)/Si via electron beam evaporation as source/drain (S/D) electrode patterns. To remove the resist residue affecting the contact resistance, the prepared devices were annealed at 200 °C for 2 h in a tubular furnace with the 100 sccm Ar flow after preparing the electrode contacts. The fabricated MoSe2 transistors were characterized using a two-probe technique at room temperature in a vacuum chamber to avoid oxidation.