| Literature DB >> 23482024 |
Philipp Tonndorf1, Robert Schmidt, Philipp Böttger, Xiao Zhang, Janna Börner, Andreas Liebig, Manfred Albrecht, Christian Kloc, Ovidiu Gordan, Dietrich R T Zahn, Steffen Michaelis de Vasconcellos, Rudolf Bratschitsch.
Abstract
We mechanically exfoliate mono- and few-layers of the transition metal dichalcogenides molybdenum disulfide, molybdenum diselenide, and tungsten diselenide. The exact number of layers is unambiguously determined by atomic force microscopy and high-resolution Raman spectroscopy. Strong photoluminescence emission is caused by the transition from an indirect band gap semiconductor of bulk material to a direct band gap semiconductor in atomically thin form.Entities:
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Year: 2013 PMID: 23482024 DOI: 10.1364/OE.21.004908
Source DB: PubMed Journal: Opt Express ISSN: 1094-4087 Impact factor: 3.894