Literature DB >> 23482024

Photoluminescence emission and Raman response of monolayer MoS₂, MoSe₂, and WSe₂.

Philipp Tonndorf1, Robert Schmidt, Philipp Böttger, Xiao Zhang, Janna Börner, Andreas Liebig, Manfred Albrecht, Christian Kloc, Ovidiu Gordan, Dietrich R T Zahn, Steffen Michaelis de Vasconcellos, Rudolf Bratschitsch.   

Abstract

We mechanically exfoliate mono- and few-layers of the transition metal dichalcogenides molybdenum disulfide, molybdenum diselenide, and tungsten diselenide. The exact number of layers is unambiguously determined by atomic force microscopy and high-resolution Raman spectroscopy. Strong photoluminescence emission is caused by the transition from an indirect band gap semiconductor of bulk material to a direct band gap semiconductor in atomically thin form.

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Year:  2013        PMID: 23482024     DOI: 10.1364/OE.21.004908

Source DB:  PubMed          Journal:  Opt Express        ISSN: 1094-4087            Impact factor:   3.894


  85 in total

1.  Van der Waals heterostructures.

Authors:  A K Geim; I V Grigorieva
Journal:  Nature       Date:  2013-07-25       Impact factor: 49.962

2.  Photooxidation and quantum confinement effects in exfoliated black phosphorus.

Authors:  Alexandre Favron; Etienne Gaufrès; Frédéric Fossard; Anne-Laurence Phaneuf-L'Heureux; Nathalie Y-W Tang; Pierre L Lévesque; Annick Loiseau; Richard Leonelli; Sébastien Francoeur; Richard Martel
Journal:  Nat Mater       Date:  2015-05-25       Impact factor: 43.841

3.  Ionic solutions of two-dimensional materials.

Authors:  Patrick L Cullen; Kathleen M Cox; Mohammed K Bin Subhan; Loren Picco; Oliver D Payton; David J Buckley; Thomas S Miller; Stephen A Hodge; Neal T Skipper; Vasiliki Tileli; Christopher A Howard
Journal:  Nat Chem       Date:  2016-11-21       Impact factor: 24.427

4.  Lateral heterojunctions within monolayer MoSe2-WSe2 semiconductors.

Authors:  Chunming Huang; Sanfeng Wu; Ana M Sanchez; Jonathan J P Peters; Richard Beanland; Jason S Ross; Pasqual Rivera; Wang Yao; David H Cobden; Xiaodong Xu
Journal:  Nat Mater       Date:  2014-08-24       Impact factor: 43.841

5.  Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide.

Authors:  Britton W H Baugher; Hugh O H Churchill; Yafang Yang; Pablo Jarillo-Herrero
Journal:  Nat Nanotechnol       Date:  2014-03-09       Impact factor: 39.213

Review 6.  Solar-energy conversion and light emission in an atomic monolayer p-n diode.

Authors:  Andreas Pospischil; Marco M Furchi; Thomas Mueller
Journal:  Nat Nanotechnol       Date:  2014-03-09       Impact factor: 39.213

7.  A hybrid material composed of multiwalled carbon nanotubes and MoSe2 nanorods as a sorbent for ultrasound-assisted solid-phase extraction of lead(II) and copper(II).

Authors:  Pertab Menghwar; Erkan Yilmaz; Mustafa Soylak
Journal:  Mikrochim Acta       Date:  2019-09-03       Impact factor: 5.833

8.  Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures.

Authors:  Ruei-San Chen; Chih-Che Tang; Wei-Chu Shen; Ying-Sheng Huang
Journal:  J Vis Exp       Date:  2015-12-05       Impact factor: 1.355

9.  Exciton Dynamics in Monolayer Transition Metal Dichalcogenides.

Authors:  Galan Moody; John Schaibley; Xiaodong Xu
Journal:  J Opt Soc Am B       Date:  2016-04-19       Impact factor: 2.106

10.  Coherent and Incoherent Coupling Dynamics between Neutral and Charged Excitons in Monolayer MoSe2.

Authors:  Kai Hao; Lixiang Xu; Philipp Nagler; Akshay Singh; Kha Tran; Chandriker Kavir Dass; Christian Schüller; Tobias Korn; Xiaoqin Li; Galan Moody
Journal:  Nano Lett       Date:  2016-07-22       Impact factor: 11.189

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