| Literature DB >> 31332181 |
Nicolai F Hartmann1, Matthew Otten2, Igor Fedin3, Dmitri Talapin2,3, Moritz Cygorek4, Pawel Hawrylak4, Marek Korkusinski5, Stephen Gray2, Achim Hartschuh6, Xuedan Ma7.
Abstract
Semiconductor quantum rings are topological structures that support fascinating phenomena such as the Aharonov-Bohm effect and persistent current, which are of high relevance in the research of quantum information devices. The annular shape of quantum rings distinguishes them from other low-dimensional materials, and enables topologically induced properties such as geometry-dependent spin manipulation and emission. While optical transition dipole moments (TDMs) in zero to two-dimensional optical emitters have been well investigated, those in quantum rings remain obscure despite their utmost relevance to the quantum photonic applications of quantum rings. Here, we study the dimensionality and orientation of TDMs in CdSe quantum rings. In contrast to those in other two-dimensional optical emitters, we find that TDMs in CdSe quantum rings show a peculiar in-plane linear distribution. Our theoretical modeling reveals that this uniaxial TDM originates from broken rotational symmetry in the quantum ring geometries.Entities:
Year: 2019 PMID: 31332181 PMCID: PMC6646311 DOI: 10.1038/s41467-019-11225-6
Source DB: PubMed Journal: Nat Commun ISSN: 2041-1723 Impact factor: 14.919
Fig. 1Ensemble and single particle characterization of CdSe quantum rings. a, b TEM images of the CdSe QRs. Scale bars in a and b represent 50 nm and 5 nm, respectively. c Absorption and emission spectra of CdSe QR ensembles. The vertical dashed line indicates the excitation wavelength for the single particle measurements. The inset is a schematic of the ring geometry. d A scanning photoluminescence image of single QRs. Scale bar: 1 µm. e A representative time-dependent spectral sequence of a single QR
Fig. 2k-vector resolved Fourier imaging of single CdSe quantum rings. a, b Calculated k-vector resolved emission pattern of a TDM lying vertically a and horizontally b on a sample plane. The critical angle (θC) and the angle determined by the numerical aperture (θNA) are indicated. c Schematic of angle-resolved photoluminescence spectroscopy on a Fourier imaging system. d, e Measured radiation patterns of QRs highlighted in f. f A scanning photoluminescence image used to locate single QRs. Scale bar: 2 µm. g, h Calculated radiation patterns of QRs with their azimuthal angles adjusted to match those in d and e. i k-vector resolved emission profiles from experimentally measured (dots) and calculated (curve) radiation patterns
Fig. 3Higher-order laser mode scanning microscopy of single CdSe quantum rings. a, b Numerically simulated transverse and longitudinal components of a radially polarized Bessel-Gauss laser beam. c, d The corresponding intensity profiles of the transverse c and longitudinal d electromagnetic components. e, f Calculated excitation patterns of a uniaxial TDM lying horizontally e or vertically f on the sample plane. g Experimentally measured excitation patterns of individual CdSe QRs. h Calculated intensity profiles of a horizontally lying uniaxial TDM (curve) and measured intensity profiles from the excitation patterns of a single CdSe QR (dot). The dimensions of a, b, e, f are 1.27 × 1.27 µm2. The dimensions of c, d are 2.53 × 2.53 µm2. The scale bars in g are 1 µm
Fig. 4Calculations of the electronic structures of CdSe quantum rings. a, b Calculated wavefunctions of the two lowest states of two-dimensional infinite well potentials with OD1 = OD2 = 13.3 nm, ID1 = ID2 = 6.1 nm, and t1 = t2 = 3.6 nm. c, d 2D slices of wavefunctions of a CdSe QR (OD1 = OD2 = 13.3 nm, ID1 = ID2 = 6.1 nm, t1 = t2 = 3.6 nm, and h = 5.0 nm) corresponding to the conduction band (CB) minimum c and the valence band (VB) maximum d calculated using an empirical tight-binding method. The slices are in the xy plane and cut through the center of the rings. e, f Calculated wavefunctions of the two lowest states of two-dimensional infinite ring well potentials with OD1 = 13.3 nm, OD2 = 9.9 nm, and ID1 = 6.1 nm, ID2 = 2.7 nm, and t1 = t2 = 3.6 nm. Breaking of the continuous rotational symmetry leads to the lifting of the p- and d- type orbitals as the two lowest states. An optical transition between these two orbitals has a uniaxial transition dipole. g, h 2D slices of wavefunctions of a CdSe QR (OD1 = 13.3 nm, OD2 = 9.9 nm, and ID1 = 6.1 nm, ID2 = 2.7 nm, t1 = t2 = 3.6 nm, and h = 5.0 nm) corresponding to the conduction band minimum g and the valence band maximum h calculated using an empirical tight-binding method. i, j Wavefunctions of the two lowest states of two-dimensional infinite ring well potentials with OD1 = 13.3 nm, OD2 = 9.9 nm, ID1 = 6.1 nm, ID2 = 3.8 nm, t1 = 3.6 nm, and t2 = 3.0 nm. k, l 2D slices of wavefunctions of a CdSe QR (OD1 = 13.3 nm, OD2 = 9.9 nm, and ID1 = 6.1 nm, ID2 = 3.8 nm, t1 = 3.6 nm, t2 = 3.0 nm, and h = 5.0 nm) corresponding to the conduction band minimum k and the valence band maximum l calculated using an empirical tight-binding method. Localization of the band edge states due to broken rotational symmetry can be observed. Scale bars: 5 nm