Literature DB >> 31276101

Metrology for the next generation of semiconductor devices.

N G Orji1, M Badaroglu2, B M Barnes1, C Beitia3, B D Bunday4, U Celano5,6, R J Kline1, M Neisser7, Y Obeng1, A E Vladar1.   

Abstract

The semiconductor industry continues to produce ever smaller devices that are ever more complex in shape and contain ever more types of materials. The ultimate sizes and functionality of these new devices will be affected by fundamental and engineering limits such as heat dissipation, carrier mobility and fault tolerance thresholds. At present, it is unclear which are the best measurement methods needed to evaluate the nanometre-scale features of such devices and how the fundamental limits will affect the required metrology. Here, we review state-of-the-art dimensional metrology methods for integrated circuits, considering the advantages, limitations and potential improvements of the various approaches. We describe how integrated circuit device design and industry requirements will affect lithography options and consequently metrology requirements. We also discuss potentially powerful emerging technologies and highlight measurement problems that at present have no obvious solution.

Entities:  

Keywords:  AFM; CD-SAX; SEM; Scatterometry; TEM; nanometrology

Year:  2018        PMID: 31276101      PMCID: PMC6605074          DOI: 10.1038/s41928-018-0150-9

Source DB:  PubMed          Journal:  Nat Electron        ISSN: 2520-1131


  10 in total

1.  Effect of partial coherence on dimensional measurement sensitivity for DUV scatterfield imaging microscopy.

Authors:  Yoon Sung Bae; Martin Y Sohn; Dong-Ryoung Lee; Sang-Soo Choi
Journal:  Opt Express       Date:  2019-10-14       Impact factor: 3.894

2.  Wear comparison of critical dimension-atomic force microscopy tips.

Authors:  Ndubuisi G Orji; Ronald G Dixson; Ernesto Lopez; Bernd Irmer
Journal:  J Micro Nanolithogr MEMS MOEMS       Date:  2020       Impact factor: 1.220

3.  Nondestructive, high-resolution, chemically specific 3D nanostructure characterization using phase-sensitive EUV imaging reflectometry.

Authors:  Michael Tanksalvala; Christina L Porter; Yuka Esashi; Bin Wang; Nicholas W Jenkins; Zhe Zhang; Galen P Miley; Joshua L Knobloch; Brendan McBennett; Naoto Horiguchi; Sadegh Yazdi; Jihan Zhou; Matthew N Jacobs; Charles S Bevis; Robert M Karl; Peter Johnsen; David Ren; Laura Waller; Daniel E Adams; Seth L Cousin; Chen-Ting Liao; Jianwei Miao; Michael Gerrity; Henry C Kapteyn; Margaret M Murnane
Journal:  Sci Adv       Date:  2021-01-27       Impact factor: 14.136

4.  Use of Ambipolar Dual-Gate Carbon Nanotube Field-Effect Transistor to Configure Exclusive-OR Gate.

Authors:  Xueyuan Liu; Bing Sun; Kailiang Huang; Chao Feng; Xiao Li; Zhen Zhang; Wenke Wang; Xin'gang Zhang; Zhi Huang; Huaping Liu; Hudong Chang; Rui Jia; Honggang Liu
Journal:  ACS Omega       Date:  2022-03-02

5.  Investigation of correlative parameters to evaluate EUV lithographic performance of PMMA.

Authors:  Kanghyun Kim; Jong-Won Lee; Byeong-Gyu Park; Hyun-Taek Oh; Yejin Ku; Jin-Kyun Lee; Geunbae Lim; Sangsul Lee
Journal:  RSC Adv       Date:  2022-01-19       Impact factor: 3.361

6.  Tunneling between parallel one-dimensional Wigner crystals.

Authors:  R Méndez-Camacho; E Cruz-Hernández
Journal:  Sci Rep       Date:  2022-03-16       Impact factor: 4.379

Review 7.  Emerging Optoelectronic Devices Based on Microscale LEDs and Their Use as Implantable Biomedical Applications.

Authors:  Haijian Zhang; Yanxiu Peng; Nuohan Zhang; Jian Yang; Yongtian Wang; He Ding
Journal:  Micromachines (Basel)       Date:  2022-07-04       Impact factor: 3.523

8.  Broadband dielectric spectroscopic detection of volatile organic compounds with ZnO nanorod gas sensors.

Authors:  Papa K Amoah; Pengtao Lin; Helmut Baumgart; Rhonda R Franklin; Yaw S Obeng
Journal:  J Phys D Appl Phys       Date:  2021       Impact factor: 3.207

9.  Data-driven approaches to optical patterned defect detection.

Authors:  Mark-Alexander Henn; Hui Zhou; Bryan M Barnes
Journal:  OSA Contin       Date:  2019-09-05

10.  Si-Doped HfO2-Based Ferroelectric Tunnel Junctions with a Composite Energy Barrier for Non-Volatile Memory Applications.

Authors:  Yoseop Lee; Sungmun Song; Woori Ham; Seung-Eon Ahn
Journal:  Materials (Basel)       Date:  2022-03-18       Impact factor: 3.623

  10 in total

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