| Literature DB >> 31137915 |
Sofia Toto1, Pascal Nicolay2, Gian Luca Morini3, Michael Rapp4, Jan G Korvink5, Juergen J Brandner6.
Abstract
Pressure is a critical parameter for a large number of industrial processes. The vacuum industry relies on accurate pressure measurement and control. A new compact wireless vacuum sensor was designed and simulated and is presented in this publication. The sensor combines the Pirani principle and Surface Acoustic Waves, and it extends the vacuum sensed range to between 10-4 Pa and 105 Pa all along a complete wireless operation. A thermal analysis was performed based on gas kinetic theory, aiming to optimize the thermal conductivity and the Knudsen regime of the device. Theoretical analysis and simulation allowed designing the structure of the sensor and its dimensions to ensure the highest sensitivity through the whole sensing range and to build a model that simulates the behavior of the sensor under vacuum. A completely new design and a model simulating the behavior of the sensor from high vacuum to atmospheric pressure were established.Entities:
Keywords: Pirani; surface acoustic waves; vacuum sensor; wireless sensors
Year: 2019 PMID: 31137915 PMCID: PMC6567304 DOI: 10.3390/s19102421
Source DB: PubMed Journal: Sensors (Basel) ISSN: 1424-8220 Impact factor: 3.576
Degree of vacuum with respect to pressure.
| Pressure Range in Pa | Degree of Vacuum |
|---|---|
| 105 to 3 × 103 | Low vacuum |
| 3 × 103 to 10−1 | Medium vacuum |
| 10−1 to 10−4 | High vacuum |
| 10−4 to 10−7 | Very high vacuum |
| 10−7 to 10−10 | Ultra-high vacuum (UHV) |
| <10−10 | Extreme-ultrahigh vacuum (EHV or XHV) |
Figure 1Ratio of gas conductance to total conductance versus pressure computed from Reference [3].
Figure 2Values of gas conductance and total thermal conductance vs. pressure computed from Reference [3].
Detection principles and pressure ranges of micro-electro-mechanical system (MEMS) Pirani gauges.
| Researcher | Type of Gauge | Pressure Range (Pa) |
|---|---|---|
| Van Herwaarden and Sarro, 1988 [ | Heated cantilever combined with thermopile | 0.13–13300 |
| Völklein and Schnelle, 1991 [ | Heated resistor combined with thermopile | 0.13–10 |
| Piotto et al., 2017 [ | Heated resistor with thermopile | 0.3–105 |
| Mastrangelo and Muller, 1991 [ | Microbridge | 10–10000 |
| Swart et al., 1994 | Microbridge | 13–1.33 × 105 |
| Chae et al., 2004 | Microbridge | 2.6–267 |
| Moelders et al., 2004 | Microbridge | 1.33–133 |
| Doms et al., 2005 [ | Microbridge | 100–105 |
| Stark et al., 2005 | Microbridge | 1.33–106 |
| Mitchell et al., 2008 [ | Microbridge | 1.33–105 |
| Khosraviani and Leung, 2009 [ | Microbridge | 13.3–106 |
| Li et al., 2010 [ | Microbridge | 106–26,665 |
| Jiang et al., 2010 [ | Microbridge | 0.1–1000 |
| Chen, 2012 [ | Microbridge | 133–1.33 × 105 |
| Puers et al., 2002 [ | Microbridge | 100–107 |
| Moutaouekkil et al., 2015 [ | Microbridge | 1000–105 |
| Mailly et al., 2009 [ | Microbridge | 20–20,000 |
| Robinson et al., 1992 [ | Resistor on dielectric membrane | 10–13,300 |
| Paul et al., 1994 [ | Resistor on dielectric membrane | 100–105 |
| Shie et al., 1995 [ | Resistor on dielectric membrane | 1.33 × 10−5–133 |
| Chuo et al., 1997 [ | Resistor on dielectric membrane | 13.3–1.33 × 107 |
| Stark et al., 2003 | Resistor on dielectric membrane | 1.33–13,300 |
| De Jong et al., 2003 | Resistor on dielectric membrane | 10–20,000 |
| Zhang et al., 2006 [ | Resistor on dielectric membrane | 10–105 |
| Völklein et al., 2013 [ | Resistor on dielectric membrane | 1.33 × 10−4–1332 |
| Grau et al., 2014 [ | Resistor on dielectric membrane | 0.13–105 |
| Xiao | Resistor on dielectric membrane | 1–1000 |
| Kimura et al., 2007 [ | Resistor on dielectric membrane | 0.002–105 |
| Jeon et al., 2016 [ | Resistor on dielectric membrane | 0.013–105 |
| Paul and Baltes, 1995 [ | Resistor on dielectric membrane | 100–106 |
| Wenzel and Bak, 1998 [ | Resistor on diaphragm | 10–105 |
| Qui et al., 2009 | Metallic wire | 1–100 |
| Brun et al., 2012 [ | Silicon nanowire | 50–105 |
| Ghouila-Houri et al., 2017 [ | Microwire | 10,000–8 × 105 |
| Schelcher et al., 2011 [ | Ni-microbeam | 3.3–105 |
| Wang et al., 2011 [ | Microplate | 0.1–105 |
| Santagata et al., 2011 [ | Tube-shaped | 0.133–1.33 × 105 |
| Mercier et al., 2012 [ | Cr/Au-resistor on LiNbO3-substrate (SAW device) | 0.001–105 |
Figure 3(a) Schematic structure of a surface acoustic wave (SAW) device. (b) A SAW interdigitated transducer (IDT) with its reflector and antenna. Source Carinthian Tech Research.
Figure 4Structure of the wireless vacuum sensor. The design shows a 1 cm3 polymethylmethacrylate (PMMA) cube crossed at its center by a microchannel. The sensing SAW–Pirani chip is inserted inside the microchannel. The heating coil and the interrogation antenna are buried inside the core of the sensor.
Figure 5WE-WPCC 760308101216 wireless power charging receiver coil manufactured by Wuerth Elektronik.
Figure 6Different possible cross-sections of the microchannel crossing the sensor: (a) quadratic with holding cavities; (b) circular; (c) quadratic and size-matching.
Figure 7Geometry of the interdigitated transducer generated on top of the chip.
Figure 8Operating protocol of the sensor.
Figure 9Geometry simulated in COMSOL.
Frequency shift of the sensor at different pressure ranges.
| Pressure Range | Frequency Shift |
|---|---|
| 10−4 to 10−3 Pa | 15.435 kHz |
| 10−3 to 10−2 Pa | 152.145 kHz |
| 103 to 104 Pa | 55.125 kHz |
| 104 to 105 Pa | 6.615 kHz |
Figure 10Calibration curve obtained from the simulation.
Mean free path of nitrogen at 300 K for pressures between 10−4 Pa and 105 Pa.
| Pressure | Mean Free Path | Minimum Size for Knudsen Number below 10 |
|---|---|---|
| 0.0001 Pa | 11.4435 m | 1.14 m |
| 0.001 Pa | 1.144 m | 0.114 m |
| 0.01 Pa | 0.1144 m | 0.01144 m |
| 0.1 Pa | 0.0114 m | 0.00114 m |
| 1 Pa | 0.0011 m | 0.00011 m |
| 10 Pa | 1.1444 × 10−4 m | 1.1444 × 10−5 m |
| 100 Pa | 1.1444 × 10−3 m | 1.1444 × 10−4 m |
| 1000 Pa | 1.178 µm | 117.8 nm |
| 10,000 Pa | 117.8 nm | 11.78 nm |
| 50,000 Pa | 23.6 nm | 2.36 nm |
| 100,000 Pa | 11.8 nm | 1.18 nm |
| 101,325 Pa | 11.6 nm | 1.16 nm |
| 200,000 Pa | 5.9 nm | 5.9 Å |
Figure 11This figure shows the flow regime with respect to the pressure and the size of the gas gap where the sensor chip is located. The red area corresponds to the free molecular flow. The white area corresponds to the transition flow, the green area corresponds to the slip flow, and the blue area corresponds to the continuum flow.
Thermal conductivity values used for the simulation.
| Pressure | Thermal Conductivity (W/m/K) |
|---|---|
|
| |
| 0.0001 Pa | 4.9 × 10−7 |
| 0.0002 Pa | 9.8 × 10−7 |
| 0.0003 Pa | 1.47 × 10−6 |
| 0.0005 Pa | 2.45 × 10−6 |
| 0.001 Pa | 4.90 × 10−6 |
|
| |
| 1000 Pa | 0.0163 |
| 10,000 Pa | 0.0232 |
| 50,000 Pa | 0.0245 |
| 100,000 Pa | 0.0246 |
| 200,000 Pa | 0.0252 |
Wireless transfer methods available in the market.
| Energy Coupling | Magnetic Induction | Magnetic Resonance | Electrostatic Coupling | Wireless Transmission |
|---|---|---|---|---|
|
| Inductive coupling between 2 coils | Coupling between 2 tuned oscillating circuits | Capacitive coupling between 2 electrodes | Reception of radio waves and rectification |
|
| Few mm to 10 cm | Few cm to m | Few mm to few cm | Up to a few m |
|
| Few W to several kW | Few W to kW | Few W to few 100s of W | 1 W max |
|
| 70% to 90% heat loss | 40% to 60% residual heat | 60% to 90% heat loss | |
|
| 10 kHz | Few 100 kHz up to MHz | Few 100 kHz to few MHz | Frequencies up to microwaves |