Literature DB >> 30755534

From 2D to 3D: Strain- and elongation-free topological transformations of optoelectronic circuits.

Dejiu Fan1, Byungjun Lee1, Caleb Coburn2, Stephen R Forrest3,2,4.   

Abstract

Optoelectronic circuits in 3D shapes with large deformations can offer additional functionalities inaccessible to conventional planar electronics based on 2D geometries constrained by conventional photolithographic patterning processes. A light-sensing focal plane array (FPA) used in imagers is one example of a system that can benefit from fabrication on curved surfaces. By mimicking the hemispherical shape of the retina in the human eye, a hemispherical FPA provides a low-aberration image with a wide field of view. Due to the inherently high value of such applications, intensive efforts have been devoted to solving the problem of transforming a circuit fabricated on a flat wafer surface to an arbitrary shape without loss of performance or distorting the linear layouts that are the natural product of this fabrication paradigm. Here we report a general approach for fabricating electronic circuits and optoelectronic devices on nondevelopable surfaces by introducing shear slip of thin-film circuit components relative to the distorting substrate. In particular, we demonstrate retina-like imagers that allow for a topological transformation from a plane to a hemisphere without changing the relative positions of the pixels from that initially laid out on a planar surface. As a result, the resolution of the imager, particularly in the foveal region, is not compromised by stretching or creasing that inevitably results in transforming a 2D plane into a 3D geometry. The demonstration provides a general strategy for realizing high-density integrated circuits on randomly shaped, nondevelopable surfaces.

Entities:  

Keywords:  semiconductor processing; sensor arrays; topological transformation

Year:  2019        PMID: 30755534      PMCID: PMC6410875          DOI: 10.1073/pnas.1813001116

Source DB:  PubMed          Journal:  Proc Natl Acad Sci U S A        ISSN: 0027-8424            Impact factor:   11.205


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