| Literature DB >> 30565449 |
Piaoyang Shen1, Fan Cao1, Haoran Wang1, Bin Wei1, Feijiu Wang2, Xiao Wei Sun3, Xuyong Yang1.
Abstract
Despite the rapid development in quantum-dot light-emitting diodes (QD-LEDs) with a single junction, it remains a big challenge to make tandem QD-LEDs with high performance. Here, we report solution-processed double-junction tandem QD-LEDs with a high external quantum efficiency of 42.2% and a high current efficiency of 183.3 cd A-1, which are comparable to those of the best vacuum-deposited tandem organic LEDs. Such high-efficiency devices are achieved by interface engineering of fully optimized single light-emitting units, which improves carriers' transport/injection balance and suppresses exciton quenching induced by ZnO, and design of an effective interconnecting layer consisting of poly(4-butylphenyl-diphenylamine) (poly-TPD)-mixed poly(9-vinylcarbazole) (PVK)/poly(3,4-ethylenedioxythiophene):polystyrene sulfonate/polyethylenimine ethoxylated-modified ZnO.Entities:
Keywords: electroluminescence; interfacial engineering; light-emitting diodes; quantum dots; tandem structure
Year: 2018 PMID: 30565449 DOI: 10.1021/acsami.8b18940
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN: 1944-8244 Impact factor: 9.229