Literature DB >> 30559410

Ionic modulation and ionic coupling effects in MoS2 devices for neuromorphic computing.

Xiaojian Zhu1, Da Li2, Xiaogan Liang2, Wei D Lu3.   

Abstract

Coupled ionic-electronic effects present intriguing opportunities for device and circuit development. In particular, layered two-dimensional materials such as MoS2 offer highly anisotropic ionic transport properties, facilitating controlled ion migration and efficient ionic coupling among devices. Here, we report reversible modulation of MoS2 films that is consistent with local 2H-1T' phase transitions by controlling the migration of Li+ ions with an electric field, where an increase/decrease in the local Li+ ion concentration leads to the transition between the 2H (semiconductor) and 1T' (metal) phases. The resulting devices show excellent memristive behaviour and can be directly coupled with each other through local ionic exchange, naturally leading to synaptic competition and synaptic cooperation effects observed in biology. These results demonstrate the potential of direct modulation of two-dimensional materials through field-driven ionic processes, and can lead to future electronic and energy devices based on coupled ionic-electronic effects and biorealistic implementation of artificial neural networks.

Entities:  

Year:  2018        PMID: 30559410     DOI: 10.1038/s41563-018-0248-5

Source DB:  PubMed          Journal:  Nat Mater        ISSN: 1476-1122            Impact factor:   43.841


  19 in total

Review 1.  Atomic and structural modifications of two-dimensional transition metal dichalcogenides for various advanced applications.

Authors:  Balakrishnan Kirubasankar; Yo Seob Won; Laud Anim Adofo; Soo Ho Choi; Soo Min Kim; Ki Kang Kim
Journal:  Chem Sci       Date:  2022-05-18       Impact factor: 9.969

2.  Ultralow Power Wearable Heterosynapse with Photoelectric Synergistic Modulation.

Authors:  Tian-Yu Wang; Jia-Lin Meng; Zhen-Yu He; Lin Chen; Hao Zhu; Qing-Qing Sun; Shi-Jin Ding; Peng Zhou; David Wei Zhang
Journal:  Adv Sci (Weinh)       Date:  2020-03-16       Impact factor: 16.806

Review 3.  Memristive and CMOS Devices for Neuromorphic Computing.

Authors:  Valerio Milo; Gerardo Malavena; Christian Monzio Compagnoni; Daniele Ielmini
Journal:  Materials (Basel)       Date:  2020-01-01       Impact factor: 3.623

4.  A Photoelectric-Stimulated MoS2 Transistor for Neuromorphic Engineering.

Authors:  Shuiyuan Wang; Xiang Hou; Lan Liu; Jingyu Li; Yuwei Shan; Shiwei Wu; David Wei Zhang; Peng Zhou
Journal:  Research (Wash D C)       Date:  2019-11-11

5.  Ionic Liquid Gate-Induced Modifications of Step Edges at SrCoO2.5 Surfaces.

Authors:  Yuechen Zhuang; Bin Cui; Hao Yang; Fang Gao; Stuart S P Parkin
Journal:  ACS Nano       Date:  2020-07-14       Impact factor: 15.881

6.  Directional charge delocalization dynamics in semiconducting 2H-MoS[Formula: see text] and metallic 1T-Li[Formula: see text]MoS[Formula: see text].

Authors:  Robert Haverkamp; Nomi L A N Sorgenfrei; Erika Giangrisostomi; Stefan Neppl; Danilo Kühn; Alexander Föhlisch
Journal:  Sci Rep       Date:  2021-03-25       Impact factor: 4.379

7.  Metal-Ions Intercalation Mechanism in Layered Anode From First-Principles Calculation.

Authors:  Junbo Zhang; Xiaodong Lu; Jingjing Zhang; Han Li; Bowen Huang; Bingbing Chen; Jianqiu Zhou; Suming Jing
Journal:  Front Chem       Date:  2021-05-10       Impact factor: 5.221

Review 8.  Nanosystems, Edge Computing, and the Next Generation Computing Systems.

Authors:  Ali Passian; Neena Imam
Journal:  Sensors (Basel)       Date:  2019-09-19       Impact factor: 3.576

9.  A biomimetic 2D transistor for audiomorphic computing.

Authors:  Sarbashis Das; Akhil Dodda; Saptarshi Das
Journal:  Nat Commun       Date:  2019-08-01       Impact factor: 14.919

Review 10.  Memristive Artificial Synapses for Neuromorphic Computing.

Authors:  Wen Huang; Xuwen Xia; Chen Zhu; Parker Steichen; Weidong Quan; Weiwei Mao; Jianping Yang; Liang Chu; Xing'ao Li
Journal:  Nanomicro Lett       Date:  2021-03-06
View more

北京卡尤迪生物科技股份有限公司 © 2022-2023.