Literature DB >> 30556551

Voltage-reduced low-defect graphene oxide: a high conductivity, near-zero temperature coefficient of resistance material.

Kevin W Silverstein1, Christian E Halbig, Jeremy S Mehta, Anju Sharma, Siegfried Eigler, Jeffrey M Mativetsky.   

Abstract

A highly conductive graphene derivative was produced by using a low-defect form of graphene oxide, oxo-G, in conjunction with voltage-reduction, a simple and environmentally-benign procedure for removing oxygen-containing functional groups. A low temperature coefficient of resistance was achieved, making this material promising for temperature-stable electronics and sensors.

Entities:  

Year:  2019        PMID: 30556551     DOI: 10.1039/c8nr08285e

Source DB:  PubMed          Journal:  Nanoscale        ISSN: 2040-3364            Impact factor:   7.790


  3 in total

1.  Room-Temperature Transport Properties of Graphene with Defects Derived from Oxo-Graphene.

Authors:  Zhenping Wang; Qirong Yao; Siegfried Eigler
Journal:  Chemistry       Date:  2020-02-03       Impact factor: 5.236

2.  Toward Optimized Charge Transport in Multilayer Reduced Graphene Oxides.

Authors:  Mustafa Neşet Çınar; Aleandro Antidormi; Viet-Hung Nguyen; Alessandro Kovtun; Samuel Lara-Avila; Andrea Liscio; Jean-Christophe Charlier; Stephan Roche; Hâldun Sevinçli
Journal:  Nano Lett       Date:  2022-03-01       Impact factor: 11.189

3.  Influence of SiO2 or h-BN substrate on the room-temperature electronic transport in chemically derived single layer graphene.

Authors:  Zhenping Wang; Qirong Yao; Yalei Hu; Chuan Li; Marleen Hußmann; Ben Weintrub; Jan N Kirchhof; Kirill Bolotin; Takashi Taniguchi; Kenji Watanabe; Siegfried Eigler
Journal:  RSC Adv       Date:  2019-11-21       Impact factor: 3.361

  3 in total

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