| Literature DB >> 30452663 |
Ming Tsuey Chew1,2, Andrew Nisbet1,2,3, Masao Suzuki4, Naruhiro Matsufuji5, Takeshi Murakami6, Bleddyn Jones7, David A Bradley1,2.
Abstract
Glioblastoma (GBM), a Grade IV brain tumour, is a well-known radioresistant cancer. To investigate one of the causes of radioresistance, we studied the capacity for potential lethal damage repair (PLDR) of three altered strains of GBM: T98G, U87 and LN18, irradiated with various ions and various levels of linear energy transfer (LET). The GBM cells were exposed to 12C and 28Si ion beams with LETs of 55, 100 and 200 keV/μm, and with X-ray beams of 1.7 keV/μm. Mono-energetic 12C ions and 28Si ions were generated by the Heavy Ion Medical Accelerator at the National Institute of Radiological Science, Chiba, Japan. Clonogenic assays were used to determine cell inactivation. The ability of the cells to repair potential lethal damage was demonstrated by allowing one identical set of irradiated cells to repair for 24 h before subplating. The results show there is definite PLDR with X-rays, some evidence of PLDR at 55 keV/μm, and minimal PLDR at 100 keV/μm. There is no observable PLDR at 200 keV/μm. This is the first study, to the authors' knowledge, demonstrating the capability of GBM cells to repair potential lethal damage following charged ion irradiations. It is concluded that a GBM's PLDR is dependent on LET, dose and GBM strain; and the more radioresistant the cell strain, the greater the PLDR.Entities:
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Year: 2019 PMID: 30452663 PMCID: PMC6373669 DOI: 10.1093/jrr/rry081
Source DB: PubMed Journal: J Radiat Res ISSN: 0449-3060 Impact factor: 2.724
IP and DP values of α, β, α/β ratio, D10, and RBE10 and RBE2 Gy of T98G, U87 and LN18 for irradiations with LET of 1.7, 55, 100 and 200 keV/μm
| T98G | α | β | D10 | D10 | D10 | 2 Gy | |
|---|---|---|---|---|---|---|---|
| Ions | LET | (Gy–1) | (Gy–2) | (Gy) | RBE | α/β (Gy) | RBE |
| 200kVp-IP | 1.7 ± 0.02 | 0.049 ± 0.001 | 0.109 ± 0.009 | 4.57 ± 0.023 | 1.00 ± 0.005 | 0.45 | 1.00 ± 0.001 |
| 200kVp-DP | 1.7 ± 0.02 | 0.226 ± 0001 | 0.039 ± 0.001 | 5.33 ± 0.001 | 0.86 ± 0.001 | 5.80 | 1.06 ± 0.001 |
| 28Si 490-IP | 55.0 ± 0.06 | 0.451 ± 0.058 | 0.213 ± 0.009 | 2.43 ± 0.027 | 1.88 ± 0.020 | 2.12 | 2.37 ± 0.012 |
| 28Si 490-DP | 55.0 ± 0.06 | 0.327 ± 0.004 | 0.202 ± 0.001 | 2.65 ± 0.002 | 1.72 ± 0.001 | 1.62 | 1.81 ± 0.001 |
| 12C 135-IP | 100 ± 1.77 | 0.935 ± 0.010 | 0.025 ± 0.004 | 2.32 ± 0.003 | 1.97 ± 0.002 | 37.4 | 3.55 ± 0.010 |
| 12C 135-DP | 100 ± 1.77 | 0.821 ± 0.006 | 0.062 ± 0.001 | 2.37 ± 0.016 | 1.93 ± 0.013 | 13.2 | 2.85 ± 0.009 |
| 28Si 490-IP | 200 ± 3.12 | 0.791 ± 0.004 | 0.095 ± 0.001 | 2.25 ± 0.045 | 2.03 ± 0.040 | 8.33 | 3.17 ± 0.026 |
| 28Si 490-DP | 200 ± 3.12 | 1.026 ± 0.007 | 0.055 ± 0.001 | 2.07 ± 0.035 | 2.22 ± 0.038 | 18.7 | 3.49 ± 0.021 |
LET error = SD, and for other parameters = SEM; IP = immediate plating; DP = 24 h delayed plating.
Fig. 1.Cell survival curves of T98G (A), U87 (B) and LN18 (C), IP versus DP when irradiated with X-rays of LET 1.7 keV/μm. IP = immediate plating, DP = 24 h delayed plating. Error bars indicate SD.
Fig. 4.Cell survival curves of T98G (A), U87 (B) and LN18 (C), IP versus DP when irradiated with 28Si (200 keV/μm). IP = immediate plating, DP = 24 h delayed plating. Error bars indicate SD.
T98G, U87 and LN18—LET of 1.7, 55, 100 and 200 keV/μm dose point PLDR ratioa
| LET | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GBM | T98G | U87 | LN18 | T98G | U87 | LN18 | T98G | U87 | LN18 | T98G | U87 | LN18 | ||||
| Dose | Dose | Dose | Dose | Dose | ||||||||||||
| (Gy) | (Gy) | (Gy) | (Gy) | (Gy) | ||||||||||||
| 1.00 | 1.00 | 1.00 | 1.00 | 1.00 | 1.00 | 1.00 | 1.00 | 1.00 | 1.00 | 1.00 | 1.00 | |||||
| 0.88 | 1.40 | 1.05 | 1.03 | 0.90 | 1.19 | 1.10 | 1.15 | 1.36 | 0.99 | 0.87 | 0.95 | |||||
| 0.77 | 1.13 | 0.98 | 0.95 | 1.02 | 1.24 | 1.08 | 1.24 | 1.08 | 0.95 | 0.86 | 0.93 | |||||
| 0.87 | 1.30 | 0.96 | 0.89 | 1.00 | 1.23 | 1.22 | 1.15 | 1.18 | 0.71 | 0.65 | 0.97 | |||||
| 0.99 | 1.04 | 1.16 | 0.85 | 1.06 | 1.24 | 1.25 | 1.07 | 1.17 | 0.83 | 0.84 | 0.93 | |||||
| 1.23 | 0.87 | 1.51 | 1.07 | 1.22 | 1.33 | 0.88 | 1.13 | 1.13 | 0.79 | 0.97 | 0.88 | |||||
| 3.01 | 1.85 | 2.38 | 2.64 | 1.91 | 2.05 | 0.75 | 1.06 | 1.18 | 1.00 | 0.99 | 0.87 | |||||
| 21.00 | 4.72 | 5.21 | 2.56 | 3.95 | 8.10 | 1.00 | 0.29 | 0.68 | ||||||||
aPLDR ratio = surviving fraction of delayed plating/surviving fraction of immediate plating (DP/IP). Ratio of ≤1 indicates no PLDR.
Fig. 2.Cell survival curves of T98G (A), U87 (B) and LN18 (C), IP versus DP when irradiated with 28Si (55 keV/μm). IP = immediate plating, DP = 24 h delayed plating. Error bars indicate SD.
Fig. 3.Cell survival curves of T98G (A), U87 (B) and LN18 (C), IP versus DP when irradiated with 12C (100 keV/μm). IP = immediate plating, DP = 24 h delayed plating. Error bars indicate SD.