Literature DB >> 30408410

Perpendicular Optical Reversal of the Linear Dichroism and Polarized Photodetection in 2D GeAs.

Ziqi Zhou1, Mingsheng Long2, Longfei Pan1, Xiaoting Wang3, Mianzeng Zhong1, Mark Blei4, Jianlu Wang2, Jingzhi Fang1, Sefaattin Tongay4, Weida Hu2, Jingbo Li1, Zhongming Wei1.   

Abstract

The ability to detect linearly polarized light is central to practical applications in polarized optical and optoelectronic fields and has been successfully demonstrated with polarized photodetection of in-plane anisotropic two-dimensional (2D) materials. Here, we report the anisotropic optical characterization of a group IV-V compound-2D germanium arsenic (GeAs) with anisotropic monoclinic structures. High-quality 2D GeAs crystals show the representative angle-resolved Raman property. The in-plane anisotropic optical nature of the GeAs crystal is further investigated by polarization-resolved absorption spectra (400-2000 nm) and polarization-sensitive photodetectors. From the visible to the near-infrared range, 2D GeAs nanoflakes demonstrate the distinct perpendicular optical reversal with a 75-80° angle on both the linear dichroism and polarization-sensitive photodetection. Obvious anisotropic features and the high dichroic ratio of Ipmax /Ipmin ∼ 1.49 at 520 nm and Ipmax /Ipmin ∼ 4.4 at 830 nm are achieved by the polarization-sensitive photodetection. The polarization-dependent photocurrent mapping implied that the polarized photocurrent mainly occurred at the Schottky photodiodes between electrode/GeAs interface. These experimental results are consistent with the theoretical calculation of band structure and band realignment. Besides the excellent polarization-sensitive photoresponse properties, GeAs-based photodetectors also exhibit rapid on/off response. These results demonstrate that the 2D GeAs crystals have promising potential for polarization optical applications.

Entities:  

Keywords:  2D materials; GeAs; linear dichroism; optical reversal; polarization-sensitive

Year:  2018        PMID: 30408410     DOI: 10.1021/acsnano.8b06629

Source DB:  PubMed          Journal:  ACS Nano        ISSN: 1936-0851            Impact factor:   15.881


  6 in total

1.  Stable mid-infrared polarization imaging based on quasi-2D tellurium at room temperature.

Authors:  Lei Tong; Xinyu Huang; Peng Wang; Lei Ye; Meng Peng; Licong An; Qiaodong Sun; Yong Zhang; Guoming Yang; Zheng Li; Fang Zhong; Fang Wang; Yixiu Wang; Maithilee Motlag; Wenzhuo Wu; Gary J Cheng; Weida Hu
Journal:  Nat Commun       Date:  2020-05-08       Impact factor: 14.919

2.  Multilayered PdSe2/Perovskite Schottky Junction for Fast, Self-Powered, Polarization-Sensitive, Broadband Photodetectors, and Image Sensor Application.

Authors:  Long-Hui Zeng; Qing-Ming Chen; Zhi-Xiang Zhang; Di Wu; Huiyu Yuan; Yan-Yong Li; Wayesh Qarony; Shu Ping Lau; Lin-Bao Luo; Yuen Hong Tsang
Journal:  Adv Sci (Weinh)       Date:  2019-08-07       Impact factor: 16.806

Review 3.  2D Layered Material Alloys: Synthesis and Application in Electronic and Optoelectronic Devices.

Authors:  Jiandong Yao; Guowei Yang
Journal:  Adv Sci (Weinh)       Date:  2021-10-31       Impact factor: 16.806

4.  Raman Anisotropy and Polarization-Sensitive Photodetection in 2D Bi2O2Se-WSe2 Heterostructure.

Authors:  Lin Tao; Sina Li; Bin Yao; Mengjia Xia; Wei Gao; Yujue Yang; Xiaozhou Wang; Nengjie Huo
Journal:  ACS Omega       Date:  2021-12-12

5.  High-Performance Photodetectors Based on the 2D SiAs/SnS2 Heterojunction.

Authors:  Yinchang Sun; Liming Xie; Zhao Ma; Ziyue Qian; Junyi Liao; Sabir Hussain; Hongjun Liu; Hailong Qiu; Juanxia Wu; Zhanggui Hu
Journal:  Nanomaterials (Basel)       Date:  2022-01-24       Impact factor: 5.076

Review 6.  In-plane anisotropic electronics based on low-symmetry 2D materials: progress and prospects.

Authors:  Siwen Zhao; Baojuan Dong; Huide Wang; Hanwen Wang; Yupeng Zhang; Zheng Vitto Han; Han Zhang
Journal:  Nanoscale Adv       Date:  2019-12-06
  6 in total

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