| Literature DB >> 30297854 |
S Nandy1, A Taraphder2,3,4, Sumanta Tewari2,5.
Abstract
The appearance of negative longitudinal magnetoresistance (LMR) in topological semimetals such as Weyl and Dirac semimetals is understood as an effect of chiral anomaly, whereas such an anomaly is not well-defined in topological insulators. Nevertheless, it has been shown recently in both theory and experiments that nontrivial Berry phase effects can give rise to negative LMR in topological insulators even in the absence of chiral anomaly. In this paper, we present a quasi-classical theory of another intriguing phenomenon in topological insulators - also ascribed to chiral anomaly in Weyl and Dirac semimetals- the so-called planar Hall effect (PHE). PHE implies the appearance of a transverse voltage in the plane of applied non-parallel electric and magnetic fields, in a configuration in which the conventional Hall effect vanishes. Starting from Boltzmann transport equations we derive the expressions for PHE and LMR in topological insulators in the bulk conduction limit, and show the important role played by orbital magnetic moment. Our theoretical results for magnetoconductance with non-parallel electric and magnetic fields predict detailed experimental signatures in topological insulators - specifically of planar Hall effect - that can be observed in experiments.Entities:
Year: 2018 PMID: 30297854 PMCID: PMC6175890 DOI: 10.1038/s41598-018-33258-5
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1(a) 3D band dispersion of the four bands (k is suppressed) of 3D topological insulator (Bi2Se3) near Γ point obtained by diagonalizing Hamiltonian described in Eq. (1). The doubly degenerate valence bands are separated from the doubly degenerate conduction bands by an energy equal to 0.3 eV. (b–d) depict the 2D band dispersions of the same four bands as mentioned above along k, k, and k axis respectively in the presence of a Zeeman field of strength 5 T applied along the x direction. The Landé g-factors used here are g = g = 20[60].
Figure 2Illustration for the planar Hall effect measurement geometry. The electric field (E) is applied along the x− axis and a magnetic field (B) in the x − y plane makes a finite angle θ with the E. The planar Hall effect is measured as an in-plane voltage (V) transverse to the direction of current in the x − y plane.
Figure 3(a) Shows the dependence of amplitude of PHC (normalized by the maximum value of PHC in the presence of m) as a function of in-plane magnetic field at θ = π/4 and temperature T = 24 K. (Inset depicts the LMC in the presence as well as absence of orbital magnetic moment (m) as a function of in-plane magnetic field at θ = 0°. The other parameters are same as above). (b,c) Show the angular dependence of LMC and PHC (normalized) at T = 24 K in the presence and absence of m for B = 5 T. Here we have normalized the y axis of (c) by the value of PHC at θ = π/4 in the presence of m. Curves in yellow indicate the presence of m whereas blue lines are for m = 0. In all cases we consider the Fermi level situated at 27 meV from the bottom of the lowest conduction band.
Figure 4(a) Shows the amplitude of planar Hall conductivity () in the presence of orbital magnetic moment as a function of Fermi energy for B = 5 T and T = 24 K for the bulk states of Bi2Se3 (Inset Shows the behavior of LMC (θ = 0) as a function of Fermi energy). It is important to note that the magnitudes of LMC and PHC behave very differently as the band filling approaches the bottom of the conduction bands. The Fermi energy is measured from the bottom of the lowest conduction band. (b) Shows the temperature dependence of the amplitude of planar Hall conductivity () in the presence of m for B = 5 T for the bulk states of Bi2Se3 (Inset shows the temperature dependence of LMC (θ = 0)). The amplitude of PHC has been normalized by its maximum value in both figures.