Literature DB >> 20671155

Quantum oscillations and hall anomaly of surface states in the topological insulator Bi2Te3.

Dong-Xia Qu1, Y S Hor, Jun Xiong, R J Cava, N P Ong.   

Abstract

Topological insulators are insulating materials that display massless, Dirac-like surface states in which the electrons have only one spin degree of freedom on each surface. These states have been imaged by photoemission, but little information on their transport parameters, for example, mobility, is available. We report the observation of Shubnikov-de Haas oscillations arising from the surface states in nonmetallic crystals of Bi(2)Te(3). In addition, we uncovered a Hall anomaly in weak fields, which enables the surface current to be seen directly. Both experiments yield a surface mobility (9000 to 10,000 centimeter(2) per volt-second) that is substantially higher than in the bulk. The Fermi velocity of 4 x 10(5) meters per second obtained from these transport experiments agrees with angle-resolved photoemission experiments.

Entities:  

Year:  2010        PMID: 20671155     DOI: 10.1126/science.1189792

Source DB:  PubMed          Journal:  Science        ISSN: 0036-8075            Impact factor:   47.728


  83 in total

1.  Opportunities in chemistry and materials science for topological insulators and their nanostructures.

Authors:  Desheng Kong; Yi Cui
Journal:  Nat Chem       Date:  2011-10-24       Impact factor: 24.427

2.  Band structure engineering in (Bi(1-x)Sb(x))(2)Te(3) ternary topological insulators.

Authors:  Jinsong Zhang; Cui-Zu Chang; Zuocheng Zhang; Jing Wen; Xiao Feng; Kang Li; Minhao Liu; Ke He; Lili Wang; Xi Chen; Qi-Kun Xue; Xucun Ma; Yayu Wang
Journal:  Nat Commun       Date:  2011-12-06       Impact factor: 14.919

3.  Josephson supercurrent through a topological insulator surface state.

Authors:  M Veldhorst; M Snelder; M Hoek; T Gang; V K Guduru; X L Wang; U Zeitler; W G van der Wiel; A A Golubov; H Hilgenkamp; A Brinkman
Journal:  Nat Mater       Date:  2012-02-19       Impact factor: 43.841

4.  Robustness of topological order and formation of quantum well states in topological insulators exposed to ambient environment.

Authors:  Chaoyu Chen; Shaolong He; Hongming Weng; Wentao Zhang; Lin Zhao; Haiyun Liu; Xiaowen Jia; Daixiang Mou; Shanyu Liu; Junfeng He; Yingying Peng; Ya Feng; Zhuojin Xie; Guodong Liu; Xiaoli Dong; Jun Zhang; Xiaoyang Wang; Qinjun Peng; Zhimin Wang; Shenjin Zhang; Feng Yang; Chuangtian Chen; Zuyan Xu; Xi Dai; Zhong Fang; X J Zhou
Journal:  Proc Natl Acad Sci U S A       Date:  2012-02-21       Impact factor: 11.205

5.  Ultra-low carrier concentration and surface-dominant transport in antimony-doped Bi₂Se₃ topological insulator nanoribbons.

Authors:  Seung Sae Hong; Judy J Cha; Desheng Kong; Yi Cui
Journal:  Nat Commun       Date:  2012-03-27       Impact factor: 14.919

6.  Magnetic field-induced helical mode and topological transitions in a topological insulator nanoribbon.

Authors:  Luis A Jauregui; Michael T Pettes; Leonid P Rokhinson; Li Shi; Yong P Chen
Journal:  Nat Nanotechnol       Date:  2016-01-18       Impact factor: 39.213

7.  Emergent surface superconductivity in the topological insulator Sb2Te3.

Authors:  Lukas Zhao; Haiming Deng; Inna Korzhovska; Milan Begliarbekov; Zhiyi Chen; Erick Andrade; Ethan Rosenthal; Abhay Pasupathy; Vadim Oganesyan; Lia Krusin-Elbaum
Journal:  Nat Commun       Date:  2015-09-11       Impact factor: 14.919

8.  Are the surface Fermi arcs in Dirac semimetals topologically protected?

Authors:  Mehdi Kargarian; Mohit Randeria; Yuan-Ming Lu
Journal:  Proc Natl Acad Sci U S A       Date:  2016-07-19       Impact factor: 11.205

9.  Manipulating surface states in topological insulator nanoribbons.

Authors:  Faxian Xiu; Liang He; Yong Wang; Lina Cheng; Li-Te Chang; Murong Lang; Guan Huang; Xufeng Kou; Yi Zhou; Xiaowei Jiang; Zhigang Chen; Jin Zou; Alexandros Shailos; Kang L Wang
Journal:  Nat Nanotechnol       Date:  2011-02-13       Impact factor: 39.213

10.  Nanoelectronics: A topological twist for transistors.

Authors:  Qi-Kun Xue
Journal:  Nat Nanotechnol       Date:  2011-04       Impact factor: 39.213

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