Literature DB >> 30287794

First-principles Investigations of Magnetic Semiconductors: An example of Transition Metal Decorated Two-dimensional SnS Monolayer.

Fangfang Wang1,2, Liyu Zhou3, Zhen Ma4, Mingxue He5, Fang Wu6, Yunfei Liu7.   

Abstract

The absence of magnetic moments in pristine two-dimensional (2D) semiconducting materials has attracted many research interests. Transition-metal (TM) decoration has been found to be an effective strategy to introduce magnetic moments in non-magnetic 2D semiconductors. However, the stability of TM atoms modified 2D semiconductors has not been well explored. Here, taking 2D Tin (II) sulfide (SnS) monolayer as a prototype, we explored the stability of magnetic semiconductors through this method. In our studies, all possible configurations of TM decoration have been considered, namely, adsorption on the intact surface, S vacancy, and Sn vacancy. Based on the energy gain and electronic analysis, our results revealed that most of the TM atoms will form a cluster, and only several TM atoms can be effectively doped into the SnS monolayer. Furthermore, the band calculations showed that only Mn substitution will give rise to a magnetic semiconductor. Thus, the reported results here provide some hidden information for further realization of the magnetic semiconductors and serve as a paradigm to prepare 2D magnetic semiconductors.

Entities:  

Keywords:  density functional theory; doping; magnetic semiconductors

Year:  2018        PMID: 30287794      PMCID: PMC6215100          DOI: 10.3390/nano8100789

Source DB:  PubMed          Journal:  Nanomaterials (Basel)        ISSN: 2079-4991            Impact factor:   5.076


  28 in total

1.  Generalized Gradient Approximation Made Simple.

Authors: 
Journal:  Phys Rev Lett       Date:  1996-10-28       Impact factor: 9.161

2.  Ab initio molecular dynamics for liquid metals.

Authors: 
Journal:  Phys Rev B Condens Matter       Date:  1993-01-01

3.  Two-dimensional transition metal carbides.

Authors:  Michael Naguib; Olha Mashtalir; Joshua Carle; Volker Presser; Jun Lu; Lars Hultman; Yury Gogotsi; Michel W Barsoum
Journal:  ACS Nano       Date:  2012-02-13       Impact factor: 15.881

4.  Facile synthesis of iv-vi SnS nanocrystals with shape and size control: nanoparticles, nanoflowers and amorphous nanosheets.

Authors:  Jiajia Ning; Kangkang Men; Guanjun Xiao; Li Wang; Quanqin Dai; Bo Zou; Bingbing Liu; Guangtian Zou
Journal:  Nanoscale       Date:  2010-07-03       Impact factor: 7.790

5.  Electric field effect in atomically thin carbon films.

Authors:  K S Novoselov; A K Geim; S V Morozov; D Jiang; Y Zhang; S V Dubonos; I V Grigorieva; A A Firsov
Journal:  Science       Date:  2004-10-22       Impact factor: 47.728

6.  What don't we know?

Authors:  Donald Kennedy; Colin Norman
Journal:  Science       Date:  2005-07-01       Impact factor: 47.728

7.  Ultralarge single crystal SnS rectangular nanosheets.

Authors:  Yejun Zhang; Jun Lu; Shuling Shen; Huarui Xu; Qiangbin Wang
Journal:  Chem Commun (Camb)       Date:  2011-03-22       Impact factor: 6.222

8.  Effective control of the charge and magnetic states of transition-metal atoms on single-layer boron nitride.

Authors:  Bing Huang; Hongjun Xiang; Jaejun Yu; Su-Huai Wei
Journal:  Phys Rev Lett       Date:  2012-05-14       Impact factor: 9.161

9.  Embedding transition-metal atoms in graphene: structure, bonding, and magnetism.

Authors:  A V Krasheninnikov; P O Lehtinen; A S Foster; P Pyykkö; R M Nieminen
Journal:  Phys Rev Lett       Date:  2009-03-26       Impact factor: 9.161

10.  Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors.

Authors:  Michele Buscema; Dirk J Groenendijk; Sofya I Blanter; Gary A Steele; Herre S J van der Zant; Andres Castellanos-Gomez
Journal:  Nano Lett       Date:  2014-05-13       Impact factor: 11.189

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