Literature DB >> 30282733

Nonsaturating large magnetoresistance in semimetals.

Ian A Leahy1, Yu-Ping Lin1, Peter E Siegfried1, Andrew C Treglia1, Justin C W Song2, Rahul M Nandkishore1,3, Minhyea Lee4,5.   

Abstract

The rapidly expanding class of quantum materials known as topological semimetals (TSMs) displays unique transport properties, including a striking dependence of resistivity on applied magnetic field, that are of great interest for both scientific and technological reasons. So far, many possible sources of extraordinarily large nonsaturating magnetoresistance have been proposed. However, experimental signatures that can identify or discern the dominant mechanism and connect to available theories are scarce. Here we present the magnetic susceptibility (χ), the tangent of the Hall angle ([Formula: see text]), along with magnetoresistance in four different nonmagnetic semimetals with high mobilities, NbP, TaP, NbSb2, and TaSb2, all of which exhibit nonsaturating large magnetoresistance (MR). We find that the distinctly different temperature dependences, [Formula: see text], and the values of [Formula: see text] in phosphides and antimonates serve as empirical criteria to sort the MR from different origins: NbP and TaP are uncompensated semimetals with linear dispersion, in which the nonsaturating magnetoresistance arises due to guiding center motion, while NbSb2 and TaSb2 are compensated semimetals, with a magnetoresistance emerging from nearly perfect charge compensation of two quadratic bands. Our results illustrate how a combination of magnetotransport and susceptibility measurements may be used to categorize the increasingly ubiquitous nonsaturating large magnetoresistance in TSMs.

Entities:  

Keywords:  Weyl semimetals; magnetic susceptibility; nonsaturating magnetoresistance; topological semimetals

Year:  2018        PMID: 30282733      PMCID: PMC6196486          DOI: 10.1073/pnas.1808747115

Source DB:  PubMed          Journal:  Proc Natl Acad Sci U S A        ISSN: 0027-8424            Impact factor:   11.205


  13 in total

1.  Large magnetoresistance of electrodeposited single-crystal bismuth thin films

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Journal:  Science       Date:  1999-05-21       Impact factor: 47.728

2.  Ultrahigh mobility and giant magnetoresistance in the Dirac semimetal Cd3As2.

Authors:  Tian Liang; Quinn Gibson; Mazhar N Ali; Minhao Liu; R J Cava; N P Ong
Journal:  Nat Mater       Date:  2014-11-24       Impact factor: 43.841

3.  Linear magnetoresistance caused by mobility fluctuations in n-doped Cd(3)As(2).

Authors:  A Narayanan; M D Watson; S F Blake; N Bruyant; L Drigo; Y L Chen; D Prabhakaran; B Yan; C Felser; T Kong; P C Canfield; A I Coldea
Journal:  Phys Rev Lett       Date:  2015-03-19       Impact factor: 9.161

4.  Distinct Electronic Structure for the Extreme Magnetoresistance in YSb.

Authors:  Junfeng He; Chaofan Zhang; Nirmal J Ghimire; Tian Liang; Chunjing Jia; Juan Jiang; Shujie Tang; Sudi Chen; Yu He; S-K Mo; C C Hwang; M Hashimoto; D H Lu; B Moritz; T P Devereaux; Y L Chen; J F Mitchell; Z-X Shen
Journal:  Phys Rev Lett       Date:  2016-12-23       Impact factor: 9.161

5.  Large, non-saturating magnetoresistance in WTe2.

Authors:  Mazhar N Ali; Jun Xiong; Steven Flynn; Jing Tao; Quinn D Gibson; Leslie M Schoop; Tian Liang; Neel Haldolaarachchige; Max Hirschberger; N P Ong; R J Cava
Journal:  Nature       Date:  2014-09-14       Impact factor: 49.962

6.  Compensated Semimetal LaSb with Unsaturated Magnetoresistance.

Authors:  L-K Zeng; R Lou; D-S Wu; Q N Xu; P-J Guo; L-Y Kong; Y-G Zhong; J-Z Ma; B-B Fu; P Richard; P Wang; G T Liu; L Lu; Y-B Huang; C Fang; S-S Sun; Q Wang; L Wang; Y-G Shi; H M Weng; H-C Lei; K Liu; S-C Wang; T Qian; J-L Luo; H Ding
Journal:  Phys Rev Lett       Date:  2016-09-16       Impact factor: 9.161

7.  Band-gap tuning and linear magnetoresistance in the silver chalcogenides.

Authors:  M Lee; T F Rosenbaum; M L Saboungi; H S Schnyders
Journal:  Phys Rev Lett       Date:  2002-01-24       Impact factor: 9.161

8.  Megagauss sensors.

Authors:  A Husmann; J B Betts; G S Boebinger; A Migliori; T F Rosenbaum; M-L Saboungi
Journal:  Nature       Date:  2002-05-23       Impact factor: 49.962

9.  Anomalous electronic structure and magnetoresistance in TaAs2.

Authors:  Yongkang Luo; R D McDonald; P F S Rosa; B Scott; N Wakeham; N J Ghimire; E D Bauer; J D Thompson; F Ronning
Journal:  Sci Rep       Date:  2016-06-07       Impact factor: 4.379

10.  Experimental discovery of a topological Weyl semimetal state in TaP.

Authors:  Su-Yang Xu; Ilya Belopolski; Daniel S Sanchez; Chenglong Zhang; Guoqing Chang; Cheng Guo; Guang Bian; Zhujun Yuan; Hong Lu; Tay-Rong Chang; Pavel P Shibayev; Mykhailo L Prokopovych; Nasser Alidoust; Hao Zheng; Chi-Cheng Lee; Shin-Ming Huang; Raman Sankar; Fangcheng Chou; Chuang-Han Hsu; Horng-Tay Jeng; Arun Bansil; Titus Neupert; Vladimir N Strocov; Hsin Lin; Shuang Jia; M Zahid Hasan
Journal:  Sci Adv       Date:  2015-11-13       Impact factor: 14.136

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  3 in total

1.  Orbit topology analyzed from π phase shift of magnetic quantum oscillations in three-dimensional Dirac semimetal.

Authors:  Sang-Eon Lee; Myeong-Jun Oh; Sanghyun Ji; Jinsu Kim; Jin-Hyeon Jun; Woun Kang; Younjung Jo; Myung-Hwa Jung
Journal:  Proc Natl Acad Sci U S A       Date:  2021-07-20       Impact factor: 11.205

2.  Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy.

Authors:  Shouvik Chatterjee; Shoaib Khalid; Hadass S Inbar; Aranya Goswami; Taozhi Guo; Yu-Hao Chang; Elliot Young; Alexei V Fedorov; Dan Read; Anderson Janotti; Chris J Palmstrøm
Journal:  Sci Adv       Date:  2021-04-14       Impact factor: 14.136

Review 3.  In-plane anisotropic electronics based on low-symmetry 2D materials: progress and prospects.

Authors:  Siwen Zhao; Baojuan Dong; Huide Wang; Hanwen Wang; Yupeng Zhang; Zheng Vitto Han; Han Zhang
Journal:  Nanoscale Adv       Date:  2019-12-06
  3 in total

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