Literature DB >> 12024208

Megagauss sensors.

A Husmann1, J B Betts, G S Boebinger, A Migliori, T F Rosenbaum, M-L Saboungi.   

Abstract

Magnetic fields change the way that electrons move through solids. The nature of these changes reveals information about the electronic structure of a material and, in auspicious circumstances, can be harnessed for applications. The silver chalcogenides, Ag2Se and Ag2Te, are non-magnetic materials, but their electrical resistance can be made very sensitive to magnetic field by adding small amounts--just 1 part in 10,000--of excess silver. Here we show that the resistance of Ag2Se displays a large, nearly linear increase with applied magnetic field without saturation to the highest fields available, 600,000 gauss, more than a million times the Earth's magnetic field. These characteristics of large (thousands of per cent) and near-linear response over a large field range make the silver chalcogenides attractive as magnetic-field sensors, especially in physically tiny megagauss (10(6) G) pulsed magnets where large fields have been produced but accurate calibration has proved elusive. High-field studies at low temperatures reveal both oscillations in the magnetoresistance and a universal scaling form that point to a quantum origin for this material's unprecedented behaviour.

Entities:  

Year:  2002        PMID: 12024208     DOI: 10.1038/417421a

Source DB:  PubMed          Journal:  Nature        ISSN: 0028-0836            Impact factor:   49.962


  13 in total

1.  Large positive magnetoresistive effect in silicon induced by the space-charge effect.

Authors:  Michael P Delmo; Shinpei Yamamoto; Shinya Kasai; Teruo Ono; Kensuke Kobayashi
Journal:  Nature       Date:  2009-02-26       Impact factor: 49.962

2.  Low-voltage magnetoresistance in silicon.

Authors:  Jun Luo; Peisen Li; Sen Zhang; Hongyu Sun; Hongping Yang; Yonggang Zhao
Journal:  Nature       Date:  2013-09-26       Impact factor: 49.962

3.  Geometrical enhancement of low-field magnetoresistance in silicon.

Authors:  Caihua Wan; Xiaozhong Zhang; Xili Gao; Jimin Wang; Xinyu Tan
Journal:  Nature       Date:  2011-09-14       Impact factor: 49.962

4.  Nonsaturating large magnetoresistance in semimetals.

Authors:  Ian A Leahy; Yu-Ping Lin; Peter E Siegfried; Andrew C Treglia; Justin C W Song; Rahul M Nandkishore; Minhyea Lee
Journal:  Proc Natl Acad Sci U S A       Date:  2018-10-03       Impact factor: 11.205

5.  Extremely high electron mobility in a phonon-glass semimetal.

Authors:  S Ishiwata; Y Shiomi; J S Lee; M S Bahramy; T Suzuki; M Uchida; R Arita; Y Taguchi; Y Tokura
Journal:  Nat Mater       Date:  2013-04-21       Impact factor: 43.841

6.  Magnetocapacitance without magnetism.

Authors:  Meera M Parish
Journal:  Philos Trans A Math Phys Eng Sci       Date:  2014-01-13       Impact factor: 4.226

7.  Linear magnetoresistance in n-type silicon due to doping density fluctuations.

Authors:  Nicholas A Porter; Christopher H Marrows
Journal:  Sci Rep       Date:  2012-08-08       Impact factor: 4.379

8.  Gate-tuned quantum oscillations of topological surface states in β-Ag2Te.

Authors:  Azat Sulaev; Weiguang Zhu; Kie Leong Teo; Lan Wang
Journal:  Sci Rep       Date:  2015-01-27       Impact factor: 4.379

9.  Unexpected observation of spatially separated Kondo scattering and ferromagnetism in Ta alloyed anatase TiO2 thin films.

Authors:  T P Sarkar; K Gopinadhan; M Motapothula; S Saha; Z Huang; S Dhar; A Patra; W M Lu; F Telesio; I Pallecchi; D Marré; T Venkatesan
Journal:  Sci Rep       Date:  2015-08-12       Impact factor: 4.379

10.  Large linear magnetoresistance and Shubnikov-de Hass oscillations in single crystals of YPdBi Heusler topological insulators.

Authors:  Wenhong Wang; Yin Du; Guizhou Xu; Xiaoming Zhang; Enke Liu; Zhongyuan Liu; Youguo Shi; Jinglan Chen; Guangheng Wu; Xi-Xiang Zhang
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

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