| Literature DB >> 30146882 |
Xiaoming Wen1, Weijian Chen1,2, Jianfeng Yang2, Qingdong Ou3, Tieshan Yang1, Chunhua Zhou1, Han Lin1, Ziyu Wang3, Yupeng Zhang3,4, Gavin Conibeer2, Qiaoliang Bao3, Baohua Jia1, David J Moss1.
Abstract
Halide perovskites are an extremely promising material platform for solar cells and photonic devices. The role of surface carrier recombination-well known to detrimentally affect the performance of devices-is still not well understood for thin samples where the thickness is comparable to or less than the carrier diffusion length. Here, using time-resolved microspectroscopy along with modeling, we investigate charge-carrier recombination dynamics in halide perovskite CH3NH3PbI3 nanoplatelets with thicknesses from ∼20 to 200 nm, ranging from much lesser than to comparable to the carrier diffusion length. We show that surface recombination plays a stronger role in thin perovskite nanoplatelets, significantly decreasing photoluminescence (PL) efficiency, PL decay lifetime, and photostability. Interestingly, we find that both thick and thin nanoplatelets exhibit a similar increase in PL efficiency with increasing excitation fluence, well described by our excitation saturation model. We also find that the excited carrier distribution along the depth impacts the surface recombination. Using the diffusion-surface recombination model, we determine the surface recombination velocity. This work provides a comprehensive understanding of the role of surface recombination and charge-carrier dynamics in thin perovskite platelets and reveals valuable insights useful for applications in photovoltaics and photonics.Entities:
Keywords: charge-carrier recombination; modeling; perovskite nanoplatelet; surface recombination; time-resolved photoluminescence
Year: 2018 PMID: 30146882 DOI: 10.1021/acsami.8b06931
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN: 1944-8244 Impact factor: 9.229